Ọgbọ nke mbụ nke ihe semiconductor bụ silicon omenala (Si) na germanium (Ge), bụ ihe ndabere maka nrụpụta sekit agbakwunyere. A na-eji ha eme ihe n'ọtụtụ ebe na obere voltaji, obere ugboro, na obere ike transistor na nchọpụta. Ihe karịrị 90% nke ngwaahịa semiconductor bụ nke sitere na silicon;
Ọgbọ nke abụọ semiconductor ihe na-anọchi anya gallium arsenide (GaAs), indium phosphide (InP) na gallium phosphide (GaP). E jiri ya tụnyere ngwaọrụ ndị dabeere na silicon, ha nwere ngwa ngwa optoelectronic dị elu na ngwa ngwa ma na-ejikarị eme ihe n'ọhịa nke optoelectronics na microelectronics. ;
Ọgbọ nke atọ nke ihe semiconductor na-anọchi anya ihe ndị na-apụta dị ka silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), diamond (C), na aluminum nitride (AlN).
Silicon carbidebụ ihe dị mkpa dị mkpa maka mmepe nke ụlọ ọrụ semiconductor ọgbọ nke atọ. Ngwa ike nke silicon carbide nwere ike zute oke arụmọrụ dị elu, miniaturization na ihe dị fechaa nke sistemụ elektrọnik ike yana nguzogide oke voltaji ha, nguzogide oke okpomọkụ, obere mfu na ihe ndị ọzọ.
N'ihi njirimara anụ ahụ ya dị elu: ọdịiche dị elu (nke kwekọrọ na mpaghara ọkụ eletrik dị elu na njupụta ike dị elu), eletrik eletrik dị elu, na okpomọkụ dị elu, a na-atụ anya na ọ ga-abụ ihe kachasị eji eme ihe maka ịme semiconductor ibe n'ọdịnihu. . Karịsịa n'ọhịa nke ụgbọ ala ike ọhụrụ, ike fotovoltaic, ụgbọ okporo ígwè, smart grids na ubi ndị ọzọ, ọ nwere uru doro anya.
A na-ekewa usoro mmepụta SiC n'ime usoro atọ dị mkpa: SiC single crystal growth, epitaxial Layer growth and device manufacturing, nke kwekọrọ na njikọ anọ dị mkpa nke yinye mmepụta ihe:mkpụrụ, epitaxy, ngwaọrụ na modul.
The mainstream usoro nke n'ichepụta substrates na-ebu ụzọ na-eji anụ ahụ uzuoku sublimation usoro iji mebie ntụ ntụ na elu-okpomọkụ gburugburu ebe obibi agụụ, na-eto kristal silicon carbide n'elu nke mkpụrụ kristal site na njikwa nke a okpomọkụ ubi. N'iji wafer silicon carbide dị ka mkpụrụ, a na-eji ntinye mmiri kemịkalụ tinye akwa oyi akwa nke otu kristal na wafer iji mepụta wafer epitaxial. N'ime ha, na-eto eto a silicon carbide epitaxial oyi akwa na conductive silicon carbide mkpụrụ nwere ike ime ka ngwaọrụ ike, nke a na-ejikarị na eletriki ụgbọ ala, fotovoltaics na ndị ọzọ ubi; na-eto eto gallium nitride epitaxial oyi akwa na ọkara mkpuchisilicon carbide mkpụrụEnwere ike mekwaa ka ọ bụrụ ngwaọrụ ugboro redio, ejiri na nkwukọrịta 5G na mpaghara ndị ọzọ.
Maka ugbu a, silicon carbide substrates nwere ihe mgbochi teknụzụ kachasị elu na agbụ ụlọ ọrụ silicon carbide, na ihe ndị na-emepụta silicon carbide bụ ihe kacha sie ike imepụta.
Achọpụtabeghị ihe nrụpụta nke SiC kpamkpam, na ịdị mma nke ogidi kristal nke akụrụngwa adịghị eguzosi ike na enwere nsogbu mkpụrụ, nke na-eduga na ọnụ ahịa dị elu nke ngwaọrụ SiC. Ọ na-ewe naanị ụbọchị 3 maka ihe silicon ka ọ bụrụ mkpanaka kristal, mana ọ na-ewe otu izu maka mkpanaka kristal silicon carbide. Mkpanaka kristal silicon izugbe nwere ike ito ogologo 200cm, mana mkpanaka kristal silicon carbide nwere ike too naanị 2cm n'ogologo. Ọzọkwa, SiC n'onwe ya bụ ihe siri ike ma sie ike, na wafers nke sitere na ya na-enwekarị ike ịkụcha ihu mgbe ị na-eji usoro ịkụcha wafer dicing ọdịnala, nke na-emetụta mkpụrụ ngwaahịa na ntụkwasị obi. Ihe ntinye SiC dị nnọọ iche na ingots silicon omenala, na ihe niile sitere na akụrụngwa, usoro, nhazi ruo ịkpụ kwesịrị ka emepụtara iji jikwa silicon carbide.
A na-ekewa ụdọ ụlọ ọrụ silicon carbide na njikọ anọ dị mkpa: mkpụrụ, epitaxy, ngwaọrụ na ngwa. Ihe ndị na-emepụta ihe bụ ntọala nke yinye ụlọ ọrụ, ihe epitaxial bụ isi ihe na-emepụta ngwaọrụ, ngwaọrụ bụ isi nke yinye ụlọ ọrụ, na ngwa bụ ihe na-akpali akpali maka mmepe ụlọ ọrụ. Ụlọ ọrụ dị n'elu na-eji akụrụngwa na-emepụta ihe ndị na-emepụta ihe site na usoro ntinye nke uzuoku anụ ahụ na ụzọ ndị ọzọ, wee na-eji usoro ntinye mmiri mmiri na ụzọ ndị ọzọ na-eto ihe epitaxial. Ụlọ ọrụ etiti na-eji ihe ndị dị elu na-emepụta ngwaọrụ ugboro redio, ngwaọrụ ike na ngwaọrụ ndị ọzọ, nke a na-emecha na-eji na mgbasa ozi 5G ala. , Ụgbọ ala eletrik, ụgbọ okporo ígwè, wdg. N'ime ha, mkpụrụ na epitaxy na-akwụ ụgwọ maka 60% nke ọnụ ahịa ụlọ ọrụ na-akwụ ụgwọ ma bụrụ isi uru nke agbụ ụlọ ọrụ.
Mkpụrụ SiC: A na-emepụta kristal SiC site na iji usoro Lely. Ngwaahịa mba ụwa na-ahụkarị na-agbanwe site na inch 4 ruo 6 inch, yana ngwaahịa mkpụrụ osisi 8-inch emepụtarala. Ihe ndị dị n'ime ụlọ na-abụkarị sentimita anọ. Ebe enwere ike ịkwalite ahịrị mmepụta silicon wafer 6-inch dị ugbu a ma gbanwee ka ọ mepụta ngwaọrụ SiC, oke ahịa ahịa nke 6-inch SiC substrates ga-edobe ogologo oge.
Usoro mkpụrụ osisi silicon carbide dị mgbagwoju anya ma sie ike imepụta. Mkpụrụ silicon carbide bụ ihe mejupụtara otu kristal nke nwere ihe abụọ mejupụtara: carbon na silicon. Ka ọ dị ugbu a, ụlọ ọrụ ahụ na-ejikarị ntụ ntụ carbon dị ọcha na ntụ ntụ silicon dị ọcha dị ka akụrụngwa iji mepụta ntụ ntụ silicon carbide. N'okpuru ebe okpomọkụ pụrụ iche, a na-eji usoro nnyefe anụ ahụ tozuru okè (usoro PVT) na-eto silicon carbide nke nha dị iche iche n'ime ọkụ ọkụ kristal. A na-edozi kristal ingot n'ikpeazụ, bepụ, ala, na-egbuke egbuke, kpochaa na ọtụtụ usoro ndị ọzọ iji mepụta mkpụrụ nke silicon carbide.
Oge nzipu: Mee-22-2024