The isi technology maka uto nkeSiC epitaxialihe bụ teknụzụ njikwa ntụpọ na mbụ, ọkachasị maka teknụzụ njikwa ntụpọ nke na-enwekarị ọdịda ngwaọrụ ma ọ bụ mmebi ntụkwasị obi. Ọmụmụ nke usoro nke ntụpọ ntụpọ na-agbatị n'ime oyi akwa epitaxial n'oge usoro uto epitaxial, nnyefe na mgbanwe iwu nke ntụpọ na interface n'etiti mkpụrụ na epitaxial oyi akwa, na nucleation usoro nke ntụpọ bụ ihe ndabere maka ịkọwa njikọ dị n'etiti. ntụpọ mkpụrụ na ntụpọ nhazi epitaxial, nke nwere ike iduzi nyocha nke mkpụrụ osisi na njikarịcha usoro epitaxial.
The ntụpọ nkesilicon carbide epitaxial layersA na-ekewa nke ọma ụzọ abụọ: ntụpọ kristal na ntụpọ morphology elu. Nrụrụ kristal, gụnyere ntụpọ ntụpọ, screw dislocations, microtubule ntụpọ, nkwụsị ihu, wdg, na-esikarị na ntụpọ na SiC substrates na-agbasa n'ime epitaxial oyi akwa. Enwere ike ịhụ ntụpọ morphology dị n'elu site na anya gba ọtọ site na iji microscope ma nwee njirimara ọdịdị ọdịdị. Nrụrụ morphology dị n'elu na-agụnyekarị: Scratch, Triangular ntụpọ, ntụpọ karọt, ọdịda, na akụkụ, dị ka egosiri na foto 4. N'oge usoro epitaxial, ihe ndị mba ọzọ, ntụpọ mkpụrụ, mmebi elu, na usoro epitaxial nwere ike imetụta usoro nkwụsị nke mpaghara. ọnọdụ uto, na-ebute ntụpọ morphology elu.
Tebụl 1. Ihe na-eme ka e guzobe ntụpọ matrix nkịtị na ntụpọ morphology elu na SiC epitaxial layers.
ntụpọ ntụpọ
A na-emepụta ntụpọ ntụpọ site na ohere ma ọ bụ oghere n'otu ebe ma ọ bụ ọtụtụ ebe lattice, na ha enweghị mgbatị oghere. Nrụrụ ntụpọ nwere ike ime na usoro mmepụta ọ bụla, karịsịa na ntinye ion. Otú ọ dị, ha siri ike ịchọpụta, na mmekọrịta dị n'etiti mgbanwe nke ntụpọ ntụpọ na ndị ọzọ ntụpọ dịkwa nnọọ mgbagwoju.
Igwe mmiri (MP)
Micropipes bụ oghere oghere nke na-agbasa n'akụkụ axis uto, yana vector Burgers <0001>. Dayameta nke microtubes sitere na akụkụ dị nta nke micron ruo iri iri nke microns. Microtubes na-egosi nnukwu njiri elu dị ka olulu n'elu nke SiC wafers. A, njupụta nke microtubes bụ banyere 0.1 ~ 1cm-2 na-aga n'ihu na ibelata azụmahịa wafer mmepụta nlekota oru.
Screw dislocations (TSD) na nsọtụ nsọtụ (TED)
Ntugharị na SiC bụ isi mmalite nke mmebi ngwaọrụ na ọdịda. Ha abụọ screw dislocations (TSD) na nsọtụ dislocations (TED) na-aga n'ihu na-eto eto, na Burgers vectors nke <0001> na 1/3 <11-20>, n'otu n'otu.
Ma screw dislocations (TSD) na nsọtụ dislocations (TED) nwere ike ịgbatị site na mkpụrụ ahụ ruo n'elu wafer ma weta obere olulu dị ka njiri elu (Nyocha 4b). Dị ka ọ na-adịkarị, njupụta nke dislocations ọnụ bụ ihe dị ka okpukpu iri karịa nke mkpọsa. Mgbasa nke mkpọsa gbatịpụrụ, ya bụ, na-esi na mkpụrụ osisi ahụ ruo na epilayer, nwekwara ike gbanwee ghọọ ntụpọ ndị ọzọ ma gbasaa n'akụkụ axis uto. N'ogeSiC epitaxialuto, a na-atụgharị screw dislocations ka ọ bụrụ ntụpọ stacking (SF) ma ọ bụ ntụpọ karọt, ebe a na-egosipụta nkwụsịtụ ọnụ na epilayers na-agbanwe site na nkwụsị ụgbọ elu basal (BPDs) ketara site na mkpụrụ n'oge uto epitaxial.
Mgbapụ ụgbọ elu bụ isi (BPD)
Dị na ụgbọ elu basal SiC, yana vector Burgers nke 1/3 <11-20>. BPD adịkarịghị apụta n'elu wafer SiC. A na-etinyekarị ha na mkpụrụ na njupụta nke 1500 cm-2, ebe njupụta ha dị na epilayer bụ naanị ihe dịka 10 cm-2. Nchọpụta nke BPD site na iji photoluminescence (PL) na-egosi atụmatụ ahịrị, dịka egosiri na foto 4c. N'ogeSiC epitaxialuto, BPD agbatịkwuru nwere ike gbanwee ka ọ bụrụ ntụpọ stacking (SF) ma ọ bụ dislocations (TED).
Mmejọ mkpokọ (SFs)
Ọdịiche dị n'usoro nchịkọta nke ụgbọ elu SiC basal. Mmejọ mgbochi nwere ike ịpụta na oyi akwa epitaxial site na iketa SF na mkpụrụ, ma ọ bụ jikọtara ya na ndọtị na mgbanwe nke mgbapụ ụgbọ elu basal (BPDs) na threading screw dislocations (TSDs). N'ozuzu, njupụta nke SF bụ ihe na-erughị 1 cm-2, ha na-egosipụtakwa njirimara triangular mgbe ahụrụ ya site na iji PL, dị ka egosiri na Figure 4e. Otú ọ dị, ụdị dị iche iche nke stacking mmejọ nwere ike kpụrụ na SiC, dị ka Shockley ụdị na Frank ụdị, n'ihi na ọbụna obere ego nke stacking ike nsogbu n'etiti ụgbọ elu nwere ike iduga a bukwanu irregularity na stacking usoro.
Ọdịda
The ọdịda ọdịda tumadi sitere na urughuru dobe na elu na n'akụkụ mgbidi nke mmeghachi omume ụlọ n'oge uto usoro, nke nwere ike kachasị site optimizing nke oge mmezi usoro nke mmeghachi omume ụlọ graphite consumables.
Nrụrụ triangular
Ọ bụ ntinye polytype 3C-SiC nke gbatịrị n'elu nke SiC epilayer n'akụkụ ụzọ ụgbọ elu basal, dị ka egosiri na Figure 4g. Enwere ike ime ya site na ụmụ irighiri ihe na-ada n'elu SiC epilayer n'oge uto epitaxial. A na-etinye ihe ndị ahụ n'ime epilayer ma na-egbochi usoro uto, na-ebute 3C-SiC polytype inclusions, nke na-egosi njiri elu triangular dị nkọ na ihe ndị dị na vertices nke mpaghara triangular. Ọtụtụ ọmụmụ ekwupụtawokwa na mmalite nke polytype inclusions bụ ncha n'elu, micropipes, na ihe na-ezighị ezi nke usoro uto.
Nrụrụ karọt
Nrụrụ karọt bụ ihe mgbagwoju anya na-agbakọta na njedebe abụọ dị na TSD na SF basal kristal ụgbọ elu, kwụsịrị site na nkwụsị ụdị Frank, na nha nke ntụpọ karọt na-ejikọta ya na mmejọ stacking prismatic. Nchikota nke njirimara ndị a na-etolite ọdịdị elu nke ntụpọ karọt, nke dị ka ụdị karọt nke nwere njupụta nke na-erughị 1 cm-2, dị ka egosiri na foto 4f. A na-etolite ntụpọ karọt n'ụzọ dị mfe na ncha ncha, TSD, ma ọ bụ ntụpọ mkpụrụ.
Ọkpụkpụ
Scratches bụ mmebi n'ibu n'elu nke SiC wafers nke e guzobere n'oge usoro mmepụta, dị ka egosiri na foto 4h. Nkịta na mkpụrụ osisi SiC nwere ike igbochi uto nke epilayer, mepụta ahịrị nke njupụta dị elu n'ime epilayer, ma ọ bụ ncha nwere ike bụrụ ihe ndabere maka ịmepụta ntụpọ karọt. Ya mere, ọ dị oke mkpa iji kpochaa SiC wafers nke ọma n'ihi na ncha ndị a nwere ike inwe mmetụta dị ukwuu na arụmọrụ ngwaọrụ mgbe ha pụtara na mpaghara arụ ọrụ nke ngwaọrụ ahụ.
Ndị ọzọ n'elu morphology ntụpọ
Ịgbakọ nzọụkwụ bụ ntụpọ elu nke e kpụrụ n'oge usoro SiC epitaxial growth, nke na-emepụta triangles obtuse ma ọ bụ trapezoidal n'elu elu nke SiC epilayer. Enwere ọtụtụ ntụpọ ndị ọzọ dị n'elu, dị ka olulu elu, ọgbụgbọ na ntụpọ. A na-ebutekarị ntụpọ ndị a site na usoro uto na-adịghị mma yana iwepụ ezughị ezu nke mmebi polishing, nke na-emetụta arụmọrụ ngwaọrụ.
Oge nzipu: Jun-05-2024