A na-ejikarị ntọala graphite kpuchie SiC iji kwado ma kpoo otu mkpụrụ kristal n'ime ngwa igwe vapor chemical (MOCVD). Nkwụsi ike nke thermal, thermal uniformity na paramita arụmọrụ ndị ọzọ nke SiC mkpuchi graphite base na-arụ ọrụ dị mkpa n'ịdị mma nke uto epitaxial, yabụ na ọ bụ isi ihe dị mkpa nke akụrụngwa MOCVD.
N'ime usoro n'ichepụta wafer, a na-arụkwa akwa epitaxial na ụfọdụ mkpụrụ wafer iji mee ka nrụpụta ngwaọrụ dị mfe. Ngwa ngwa ọkụ ọkụ ọkụ ọkụ ọkụ na-ahụkarị kwesịrị ịkwadebe akwa epitaxial nke GaAs na mkpụrụ silicon; A na-etolite oyi akwa SiC epitaxial na mkpụrụ nke SiC na-eduzi maka owuwu nke ngwaọrụ dịka SBD, MOSFET, wdg, maka nnukwu voltaji, elu ugbu a na ngwa ike ndị ọzọ; A na-arụ akwa akwa epitaxial GaN na mkpụrụ SiC nwere obere mkpuchi iji wuo HEMT na ngwaọrụ ndị ọzọ maka ngwa RF dị ka nkwukọrịta. Usoro a enweghị ikewapụ na akụrụngwa CVD.
N'ime akụrụngwa CVD, enweghị ike itinye mkpụrụ ahụ na igwe ma ọ bụ naanị tinye ya na ntọala maka ntinye epitaxial, n'ihi na ọ na-emetụta ikuku gas (nke kwụ ọtọ, vetikal), ọnọdụ okpomọkụ, nrụgide, ndozi, mwụfu nke mmetọ na akụkụ ndị ọzọ. mmetụta mmetụta. Ya mere, ọ dị mkpa iji isi ihe, wee tinye mkpụrụ ahụ na diski ahụ, wee jiri teknụzụ CVD mee ihe na-eme ka epitaxial deposition na mkpụrụ, nke bụ isi ihe na-ese onyinyo nke SiC (nke a na-akpọkwa tray).
A na-ejikarị ntọala graphite kpuchie SiC iji kwado ma kpoo otu mkpụrụ kristal n'ime ngwa igwe vapor chemical (MOCVD). Nkwụsi ike nke thermal, thermal uniformity na paramita arụmọrụ ndị ọzọ nke SiC mkpuchi graphite base na-arụ ọrụ dị mkpa n'ịdị mma nke uto epitaxial, yabụ na ọ bụ isi ihe dị mkpa nke akụrụngwa MOCVD.
Metal-organic chemical vapor deposition (MOCVD) bụ teknụzụ bụ isi maka uto epitaxial nke ihe nkiri GaN na LED-acha anụnụ anụnụ. Ọ nwere uru nke ịrụ ọrụ dị mfe, ọnụego uto na-achịkwa na ịdị ọcha dị elu nke ihe nkiri GaN. Dị ka ihe dị mkpa akụrụngwa na mmeghachi omume ụlọ nke MOCVD akụrụngwa, na-ebu isi eji maka GaN film epitaxial ibu kwesịrị inwe uru nke elu okpomọkụ eguzogide, edo thermal conductivity, ezi chemical kwụsie ike, ike thermal ujo eguzogide, wdg Graphite ihe nwere ike izute. ọnọdụ ndị dị n'elu.
Dị ka otu n'ime isi mmiri nke MOCVD akụrụngwa, graphite base bụ ụgbọelu na kpo oku ozu nke mkpụrụ, nke kpọmkwem na-ekpebi uniformity na ịdị ọcha nke film ihe, otú àgwà ya kpọmkwem na-emetụta nkwadebe nke epitaxial mpempe akwụkwọ, na n'otu oge ahụ. oge, na mmụba nke ọnụ ọgụgụ nke ojiji na mgbanwe nke ọnọdụ ọrụ, ọ dị nnọọ mfe iyi, nke ndị consumables.
Ọ bụ ezie na graphite nwere ezigbo conductivity thermal na nkwụsi ike, ọ nwere ezigbo uru dị ka ihe ndabere nke akụrụngwa MOCVD, mana n'ime usoro mmepụta, graphite ga-emebi ntụ ntụ n'ihi ihe ndị fọdụrụ na gas na-emebi emebi na organic organics, yana ndụ ọrụ. graphite isi ga-ukwuu belata. N'otu oge ahụ, ntụ ntụ graphite na-ada ada ga-eme ka mmetọ na mgbawa.
Mpụta nke teknụzụ mkpuchi nwere ike inye ndozi ntụ ntụ n'elu, kwalite conductivity thermal, na nhata nkesa okpomọkụ, nke ghọrọ teknụzụ bụ isi iji dozie nsogbu a. Graphite base in MOCVD akụrụngwa na-eji gburugburu ebe obibi, graphite isi mkpuchi mkpuchi kwesịrị izute ndị a àgwà:
(1) Enwere ike kechie ntọala graphite n'ụzọ zuru ezu, na njupụta dị mma, ma ọ bụghị na graphite base dị mfe imebi na gas na-emebi emebi.
(2) Nchikota ike na graphite isi dị elu iji hụ na mkpuchi adịghị mfe ịdapụ mgbe ọtụtụ okpomọkụ dị elu na obere okpomọkụ cycles.
(3) Ọ nwere ezigbo nkwụsi ike nke kemịkal iji zere ọdịda mkpuchi na oke okpomọkụ na ikuku na-emebi emebi.
SiC nwere uru nke nguzogide corrosion, elu okpomọkụ conductivity, thermal ujo nkwụsi ike na elu kemịkal kwụsie ike, na ike na-arụ ọrụ nke ọma na GaN epitaxial ikuku. Na mgbakwunye, ọnụọgụ mgbasawanye thermal nke SiC dị iche na nke graphite, yabụ SiC bụ ihe kachasị amasị maka mkpuchi elu nke isi graphite.
Ka ọ dị ugbu a, SiC nkịtị bụ ụdị 3C, 4H na 6H, yana ojiji SiC nke ụdị kristal dị iche iche dị iche. Dịka ọmụmaatụ, 4H-SiC nwere ike ịmepụta ngwaọrụ dị elu; 6H-SiC bụ ihe kwụsiri ike ma nwee ike imepụta ngwaọrụ fotoelectric; N'ihi nhazi ya na GaN, enwere ike iji 3C-SiC mepụta akwa epitaxial GaN ma mepụta ngwaọrụ SiC-GaN RF. A na-akpọkwa 3C-SiC dị ka β-SiC, na iji β-SiC dị mkpa dị ka ihe nkiri na ihe mkpuchi, ya mere β-SiC bụ isi ihe ugbu a maka mkpuchi.
Oge nzipu: Ọgọst-04-2023