A na-ejikarị ntọala graphite kpuchie SiC iji kwado ma kpoo otu mkpụrụ kristal n'ime ngwa igwe vapor chemical (MOCVD). Nkwụsi ike nke thermal, thermal uniformity na paramita arụmọrụ ndị ọzọ nke SiC mkpuchi graphite base na-arụ ọrụ dị mkpa n'ịdị mma nke uto epitaxial, yabụ na ọ bụ isi ihe dị mkpa nke akụrụngwa MOCVD.
N'ime usoro n'ichepụta wafer, a na-arụkwa akwa epitaxial na ụfọdụ mkpụrụ wafer iji mee ka nrụpụta ngwaọrụ dị mfe. Ngwa ngwa ọkụ ọkụ ọkụ ọkụ ọkụ na-ahụkarị kwesịrị ịkwadebe akwa epitaxial nke GaAs na mkpụrụ silicon; A na-etolite oyi akwa SiC epitaxial na mkpụrụ nke SiC na-eduzi maka owuwu nke ngwaọrụ dịka SBD, MOSFET, wdg, maka nnukwu voltaji, elu ugbu a na ngwa ike ndị ọzọ; A na-arụ akwa akwa epitaxial GaN na mkpụrụ SiC nwere obere mkpuchi iji wuo HEMT na ngwaọrụ ndị ọzọ maka ngwa RF dị ka nkwukọrịta. Usoro a enweghị ikewapụ na akụrụngwa CVD.
N'ime akụrụngwa CVD, enweghị ike itinye mkpụrụ ahụ na igwe ma ọ bụ naanị tinye ya na ntọala maka ntinye epitaxial, n'ihi na ọ na-emetụta ikuku gas (nke kwụ ọtọ, vetikal), ọnọdụ okpomọkụ, nrụgide, ndozi, mwụfu nke mmetọ na akụkụ ndị ọzọ. mmetụta mmetụta. Ya mere, a na-achọ ntọala, mgbe ahụ, a na-etinye mkpụrụ ahụ na diski ahụ, mgbe ahụ, a na-eme ihe ntinye epitaxial na mkpụrụ osisi site na iji teknụzụ CVD, nke a bụ isi ihe mkpuchi graphite nke SiC (nke a makwaara dị ka tray).
A na-ejikarị ntọala graphite kpuchie SiC iji kwado ma kpoo otu mkpụrụ kristal n'ime ngwa igwe vapor chemical (MOCVD). Nkwụsi ike nke thermal, thermal uniformity na paramita arụmọrụ ndị ọzọ nke SiC mkpuchi graphite base na-arụ ọrụ dị mkpa n'ịdị mma nke uto epitaxial, yabụ na ọ bụ isi ihe dị mkpa nke akụrụngwa MOCVD.
Metal-organic chemical vapor deposition (MOCVD) bụ teknụzụ bụ isi maka uto epitaxial nke ihe nkiri GaN na LED-acha anụnụ anụnụ. Ọ nwere uru nke ịrụ ọrụ dị mfe, ọnụego uto na-achịkwa na ịdị ọcha dị elu nke ihe nkiri GaN. Dị ka ihe dị mkpa akụrụngwa na mmeghachi omume ụlọ nke MOCVD akụrụngwa, na-ebu isi eji maka GaN film epitaxial ibu kwesịrị inwe uru nke elu okpomọkụ eguzogide, edo thermal conductivity, ezi chemical kwụsie ike, ike thermal ujo eguzogide, wdg Graphite ihe nwere ike izute. ọnọdụ ndị dị n'elu.
Dị ka otu n'ime isi mmiri nke MOCVD akụrụngwa, graphite base bụ ụgbọelu na kpo oku ozu nke mkpụrụ, nke kpọmkwem na-ekpebi uniformity na ịdị ọcha nke film ihe, otú àgwà ya kpọmkwem na-emetụta nkwadebe nke epitaxial mpempe akwụkwọ, na n'otu oge ahụ. oge, na mmụba nke ọnụ ọgụgụ nke ojiji na mgbanwe nke ọnọdụ ọrụ, ọ dị nnọọ mfe iyi, nke ndị consumables.
Ọ bụ ezie na graphite nwere ezigbo conductivity thermal na nkwụsi ike, ọ nwere ezigbo uru dị ka ihe ndabere nke akụrụngwa MOCVD, mana n'ime usoro mmepụta, graphite ga-emebi ntụ ntụ n'ihi ihe ndị fọdụrụ na gas na-emebi emebi na organic organics, yana ndụ ọrụ. graphite isi ga-ukwuu belata. N'otu oge ahụ, ntụ ntụ graphite na-ada ada ga-eme ka mmetọ na mgbawa.
Mpụta nke teknụzụ mkpuchi nwere ike inye ndozi ntụ ntụ n'elu, kwalite conductivity thermal, na nhata nkesa okpomọkụ, nke ghọrọ teknụzụ bụ isi iji dozie nsogbu a. Graphite base in MOCVD akụrụngwa na-eji gburugburu ebe obibi, graphite isi mkpuchi mkpuchi kwesịrị izute ndị a àgwà:
(1) Enwere ike kechie ntọala graphite n'ụzọ zuru ezu, na njupụta dị mma, ma ọ bụghị na graphite base dị mfe imebi na gas na-emebi emebi.
(2) Nchikota ike na graphite isi dị elu iji hụ na mkpuchi adịghị mfe ịdapụ mgbe ọtụtụ okpomọkụ dị elu na obere okpomọkụ cycles.
(3) Ọ nwere ezigbo nkwụsi ike nke kemịkal iji zere ọdịda mkpuchi na oke okpomọkụ na ikuku na-emebi emebi.
SiC nwere uru nke nguzogide corrosion, elu okpomọkụ conductivity, thermal ujo nkwụsi ike na elu kemịkal kwụsie ike, na ike na-arụ ọrụ nke ọma na GaN epitaxial ikuku. Na mgbakwunye, ọnụọgụ mgbasawanye thermal nke SiC dị iche na nke graphite, yabụ SiC bụ ihe kachasị amasị maka mkpuchi elu nke isi graphite.
Ka ọ dị ugbu a, SiC nkịtị bụ ụdị 3C, 4H na 6H, yana ojiji SiC nke ụdị kristal dị iche iche dị iche. Dịka ọmụmaatụ, 4H-SiC nwere ike ịmepụta ngwaọrụ dị elu; 6H-SiC bụ ihe kwụsiri ike ma nwee ike imepụta ngwaọrụ fotoelectric; N'ihi nhazi ya na GaN, enwere ike iji 3C-SiC mepụta akwa epitaxial GaN ma mepụta ngwaọrụ SiC-GaN RF. A na-akpọkwa 3C-SiC dị ka β-SiC, na iji β-SiC dị mkpa dị ka ihe nkiri na ihe mkpuchi, ya mere β-SiC bụ isi ihe ugbu a maka mkpuchi.
Usoro maka ịkwadebe mkpuchi silicon carbide
Ka ọ dị ugbu a, ụzọ nkwadebe nke mkpuchi SiC na-agụnye usoro gel-sol, usoro ntinye, usoro mkpuchi ahịhịa, usoro ịgbasa plasma, usoro mmeghachi omume gas (CVR) na usoro ntinye mmiri mmiri (CVD).
Usoro ntinye:
Usoro bụ ụdị elu okpomọkụ siri ike na-adọ sintering, nke tumadi na-eji ngwakọta nke Si ntụ ntụ na C ntụ ntụ dị ka embedding ntụ ntụ, na graphite matrix na-enịm ke embedding ntụ ntụ, na elu okpomọkụ sintering na-rụrụ na inert gas. , na n'ikpeazụ a na-enweta mkpuchi SiC n'elu matrix graphite. Usoro ahụ dị mfe na nchikota n'etiti mkpuchi na mkpụrụ ahụ dị mma, ma ọdịdị nke mkpuchi ahụ n'akụkụ ntụziaka nke ọkpụrụkpụ adịghị mma, nke dị mfe ịmepụta oghere ndị ọzọ na-eduga na nkwụsị nke oxidation na-adịghị mma.
Usoro mkpuchi ahịhịa:
Usoro mkpuchi ahịhịa bụ tumadi iji kpochaa akụrụngwa mmiri dị n'elu matriks graphite, wee gwọọ akụrụngwa ahụ n'otu ọnọdụ okpomọkụ iji dozie mkpuchi ahụ. Usoro ahụ dị mfe na ọnụ ahịa dị ala, ma mkpuchi nke a kwadebere site na usoro mkpuchi ahịhịa adịghị ike na-ejikọta ya na mkpụrụ, ihe mkpuchi mkpuchi adịghị mma, mkpuchi ahụ dị mkpa na nkwụsị nke oxidation dị ala, na ụzọ ndị ọzọ dị mkpa iji nyere aka. ya.
Usoro ịgbasa Plasma:
Usoro ịgbasa plasma bụ ọkachasị iji egbe plasma fesa ihe gbazere ma ọ bụ nke gbazere ọkara n'elu matriks graphite, wee sie ike na njikọ iji mepụta mkpuchi. Usoro a dị mfe iji rụọ ọrụ ma nwee ike ịkwadebe mkpuchi mkpuchi silicon carbide dị ntakịrị, ma mkpuchi silicon carbide nke a na-akwadebe site na usoro ahụ na-abụkarị adịghị ike ma na-eduga n'ịkwụsị oxidation na-adịghị ike, n'ihi ya, a na-ejikarị ya maka nkwadebe nke mkpuchi nke SiC composite. àgwà mkpuchi.
Usoro nke gel-sol:
Usoro gel-sol bụ tumadi iji dozie otu ihe ngwọta nke edo na nke doro anya na-ekpuchi elu nke matriks ahụ, na-ehicha n'ime gel wee na-agbanye iji nweta mkpuchi. Usoro a dị mfe iji rụọ ọrụ na ọnụ ala dị ala, ma mkpuchi a na-emepụta nwere ụfọdụ adịghị ike dị ka obere nkwụsị ọkụ ọkụ na nkwụsị dị mfe, n'ihi ya, a pụghị iji ya mee ihe n'ọtụtụ ebe.
Mmeghachi omume gas nke kemịkal (CVR):
CVR na-ebute mkpuchi SiC site na iji Si na SiO2 ntụ ntụ iji mepụta uzuoku SiO na oke okpomọkụ, na usoro mmeghachi omume kemịkalụ na-eme n'elu ihe C. Ihe mkpuchi SiC nke a kwadebere site na usoro a nwere njikọ chiri anya na mkpụrụ, ma mmeghachi omume okpomọkụ dị elu ma ọnụ ahịa dị elu.
Mkpokọta vapor Chemical (CVD):
Ka ọ dị ugbu a, CVD bụ teknụzụ bụ isi maka ịkwadebe mkpuchi SiC n'elu ala. Usoro bụ isi bụ usoro mmeghachi omume anụ ahụ na nke kemịkalụ nke gas na-emeghachi ihe na-eme ihe n'elu ala, na n'ikpeazụ a na-akwado mkpuchi SiC site na ntinye n'elu ala. Ihe mkpuchi SiC nke teknụzụ CVD kwadebere na-ejikọta ya na elu nke mkpụrụ osisi ahụ, nke nwere ike imeziwanye nguzogide oxidation na nkwụsi ike nke ihe ndị na-emepụta ihe, ma oge ntinye nke usoro a dị ogologo, na mmeghachi omume gas nwere ụfọdụ nsị. gas.
Ọnọdụ ahịa nke SiC mkpuchi graphite base
Mgbe ndị na-emepụta mba ọzọ malitere n'oge, ha nwere ụzọ doro anya na oke ahịa ahịa. N'ụwa niile, ndị na-ebubata isi ihe eserese nke SiC bụ Dutch Xycard, Germany SGL Carbon (SGL), Japan Toyo Carbon, United States MEMC na ụlọ ọrụ ndị ọzọ, bụ ndị na-ejikarị ahịa mba ụwa. Ọ bụ ezie na China agbajila isi teknụzụ isi nke uto edo nke mkpuchi SiC n'elu matriks graphite, matrix graphite dị elu ka na-adabere na German SGL, Japan Toyo Carbon na ụlọ ọrụ ndị ọzọ, matriks graphite nyere site na ụlọ ọrụ ụlọ na-emetụta ọrụ ahụ. ndụ n'ihi okpomọkụ conductivity, elastic modulus, isiike modul, lattice ntụpọ na ndị ọzọ àgwà nsogbu. Ngwa MOCVD enweghị ike imezu ihe achọrọ maka ojiji nke ntọala graphite mkpuchi mkpuchi SiC.
Ụlọ ọrụ semiconductor nke China na-etolite ngwa ngwa, yana mmụba nwayọọ nwayọọ nke MOCVD epitaxial equipment localization rate, yana mgbasawanye ngwa ngwa ndị ọzọ, ahịa ngwaahịa ngwaahịa graphite mkpuchi SiC n'ọdịnihu ga-eto ngwa ngwa. Dabere na atụmatụ ụlọ ọrụ mbido mbụ, ahịa ntọala graphite ụlọ ga-agafe yuan nde 500 n'ime afọ ole na ole sochirinụ.
SiC mkpuchi graphite base bụ isi ihe mejupụtara akụrụngwa semiconductor ụlọ ọrụ mmepụta ihe, na-amụta isi teknụzụ nke mmepụta ya na nrụpụta ya, yana ịghọta n'usoro nke usoro akụrụngwa akụrụngwa niile bụ nnukwu ihe dị mkpa maka ịgba mbọ hụ na mmepe nke akụrụngwa. Ụlọ ọrụ semiconductor nke China. Ubi nke ụlọ SiC mkpuchi graphite isi na-eto eto, na àgwà ngwaahịa nwere ike iru ọkwa mba ụwa n'oge na-adịghị anya.
Oge nzipu: Jul-24-2023