2 Nsonaazụ nnwale na mkparịta ụka
2.1Epitaxial oyi akwaọkpụrụkpụ na uniformity
Ọkpụrụkpụ oyi akwa epitaxial, itinye uche doping na ịdị n'otu bụ otu n'ime isi ihe na-egosi maka ịdị mma nke wafer epitaxial. Ọkpụrụkpụ a na-achịkwa nke ọma, itinye uche doping na ịdị n'otu n'ime wafer bụ isi ihe iji hụ na arụmọrụ na nkwụsi ike nkeNgwaọrụ ike SiC, na ọkpụrụkpụ epitaxial oyi akwa na doping ịta n'otu n'otu bụkwa ihe ndabere dị mkpa maka ịlele ike usoro nke akụrụngwa epitaxial.
Ọgụgụ 3 na-egosi nha nha nha na nkesa nke 150 mm na 200 mmSiC epitaxial wafers. Enwere ike ịhụ site na ọnụ ọgụgụ ahụ na akụkụ nkesa nkesa ọkpụrụkpụ nke epitaxial bụ ihe nrịbama gbasara ebe etiti nke wafer. Oge usoro epitaxial bụ 600s, nkezi nke oyi akwa epitaxial nke 150mm epitaxial wafer bụ 10.89 um, na nha nha bụ 1.05%. Site na ngụkọ, ọnụ ọgụgụ epitaxial na-eto eto bụ 65.3 um / h, nke bụ ọkwa usoro epitaxial ngwa ngwa. N'okpuru otu oge usoro epitaxial, ọkpụkpụ epitaxial Layer nke 200 mm epitaxial wafer bụ 10.10 um, nha nha nha dị n'ime 1.36%, na mkpokọta uto bụ 60.60 um / h, nke dị ntakịrị ala karịa 150 mm. ọnụego. Nke a bụ n'ihi na enwere mfu doro anya n'ụzọ mgbe isi iyi silicon na carbon na-esi na mgbago elu nke ụlọ mmeghachi omume site na wafer elu ruo na ala nke ụlọ mmeghachi omume, na mpaghara wafer 200 mm buru ibu karịa 150 mm. The gas na-agafe n'elu nke 200 mm wafer maka ogologo anya, na isi iyi gas na-eri n'ụzọ bụ karịa. N'okpuru ọnọdụ nke wafer na-aga n'ihu na-atụgharị, n'ozuzu oke nke oyi akwa epitaxial dị ntakịrị, ya mere ọnụ ọgụgụ na-eto eto na-eji nwayọọ nwayọọ. N'ozuzu, nha nha nke 150 mm na 200 mm epitaxial wafers dị oke mma, na ikike usoro nke ngwá ọrụ nwere ike izute ihe ndị a chọrọ nke ngwaọrụ dị elu.
2.2 Epitaxial oyi akwa doping itinye uche na otu
Onyonyo 4 na-egosi otu nleba anya doping na nkesa okirikiri nke 150 mm na 200 mmSiC epitaxial wafers. Dị ka a na-ahụ site na ọnụ ọgụgụ a, usoro nkesa ịta ahụhụ na wafer epitaxial nwere akara ngosi doro anya n'etiti etiti wafer. Ịdị n'otu nke doping ntinye uche nke 150 mm na 200 mm epitaxial layers bụ 2.80% na 2.66% n'otu n'otu, nke enwere ike ịchịkwa n'ime 3%, nke bụ ọkwa dị mma maka akụrụngwa mba ụwa yiri ya. A na-ekesa usoro ịta ahụhụ doping nke oyi akwa epitaxial n'ụdị "W" n'akụkụ akụkụ dayameta, nke a na-ekpebikarị site na mpaghara eruba nke ọkụ ọkụ na-ekpo ọkụ na-ekpo ọkụ na-ekpo ọkụ, n'ihi na ntụzịaka ikuku nke ikuku na-eto eto na-esi na ya sitere. njedebe ntinye ikuku (n'elu) ma na-esi na njedebe ala na-asọba na laminar site na elu wafer; n'ihi na "njedebe na-aga n'ihu" ọnụego nke ikuku carbon (C2H4) dị elu karịa nke isi iyi silicon (TCS), mgbe wafer na-atụgharị, n'ezie C / Si dị n'elu wafer na-eji nwayọọ nwayọọ na-ebelata site na nsọtụ ruo na njedebe. etiti (isi iyi carbon dị n'etiti dị obere), dị ka "nkọwa ọnọdụ asọmpi" nke C na N si kwuo, itinye uche doping dị n'etiti wafer nke nta nke nta na-agbada n'akụkụ ọnụ, iji nweta ịdị n'otu nke itinye uche dị mma, A na-agbakwunye ọnụ N2 dị ka nkwụghachi ụgwọ n'oge usoro epitaxial iji belata mbelata nke itinye uche doping site na etiti ruo na nsọtụ, nke mere na njedebe ikpeazụ nke doping na-egosi ọdịdị "W".
2.3 Epitaxial oyi akwa ntụpọ
Na mgbakwunye na ọkpụrụkpụ na itinye uche doping, ọkwa njikwa ntụpọ epitaxial oyi akwa bụkwa isi ihe maka ịlele ogo nke wafers epitaxial na ihe dị mkpa na-egosi ikike usoro nke akụrụngwa epitaxial. Ọ bụ ezie na SBD na MOSFET nwere ihe dị iche iche chọrọ maka ntụpọ, a na-akọwapụta ntụpọ morphology elu dị ka ntụpọ dobe, ntụpọ triangle, ntụpọ karọt, ntụpọ comet, wdg dị ka ntụpọ egbu nke ngwaọrụ SBD na MOSFET. Ihe puru omume nke ọdịda nke ibe nwere ntụpọ ndị a dị elu, ya mere ịchịkwa ọnụ ọgụgụ ndị na-egbu egbu dị oke mkpa maka ịkwalite mkpụrụ mgbawa na ibelata ọnụ ahịa. Ọgụgụ 5 na-egosi nkesa ntụpọ egbu egbu nke 150 mm na 200 mm SiC epitaxial wafers. N'okpuru ọnọdụ na enweghị ahaghị nhata doro anya na nha C / Si, ntụpọ karọt na ntụpọ comet nwere ike iwepụ kpamkpam, ebe ntụpọ dobe na ntụpọ triangle metụtara njikwa ịdị ọcha n'oge ọrụ nke akụrụngwa epitaxial, ọkwa adịghị ọcha nke graphite. akụkụ na ụlọ mmeghachi omume, na àgwà nke mkpụrụ. Site na tebụl 2, a pụrụ ịhụ na njupụta ntụpọ na-egbu egbu nke 150 mm na 200 mm epitaxial wafers nwere ike ịchịkwa n'ime 0.3 particles / cm2, nke bụ ọkwa dị mma maka otu ụdị ngwá ọrụ ahụ. Ọkwa njikwa njupụta na-egbu egbu nke 150 mm epitaxial wafer dị mma karịa nke 200 mm epitaxial wafer. Nke a bụ n'ihi na usoro nkwadebe mkpụrụ nke 150 mm tozuru oke karịa nke 200 mm, mma mkpụrụ dị mma, na ọkwa nchịkwa adịghị ọcha nke ụlọ mmeghachi omume graphite 150 mm ka mma.
2.4 Epitaxial wafer elu adịghị mma
Ihe osise 6 na-egosi ihe oyiyi AFM nke elu nke 150 mm na 200 mm SiC epitaxial wafers. Enwere ike ịhụ site na ọnụ ọgụgụ ahụ na mgbọrọgwụ elu pụtara square roughness Ra nke 150 mm na 200 mm epitaxial wafers bụ 0.129 nm na 0.113 nm n'otu n'otu, na elu nke epitaxial oyi akwa na-adị ire ụtọ na-enweghị ihe doro anya macro-nzọụkwụ mkpokọta mkpokọta. Ihe omume a na-egosi na uto nke oyi akwa epitaxial na-edobe ọnọdụ uto nke nzọụkwụ n'oge usoro epitaxial dum, ọ dịghịkwa nchịkọta nzọụkwụ na-eme. Enwere ike ịhụ na site na iji usoro uto epitaxial kachasị mma, enwere ike nweta akwa epitaxial dị nro na 150 mm na 200 mm obere akụkụ ala.
3 Nkwubi okwu
A kwadebere 150 mm na 200 mm 4H-SiC homogeneous epitaxial wafers nke ọma na ihe ndị dị n'ime ụlọ na-eji ngwá ọrụ 200 mm SiC epitaxial na-emepụta onwe ya, na usoro epitaxial na-ejikọta ọnụ nke kwesịrị ekwesị maka 150 mm na 200 mm. Ọnụego uto epitaxial nwere ike karịa 60 μm / h. Ka ọ na-emezu ihe achọrọ epitaxy dị elu, àgwà wafer epitaxial dị mma. Enwere ike ịchịkwa nha nha nke 150 mm na 200 mm SiC epitaxial wafers n'ime 1.5%, ịdị n'otu n'otu n'otu bụ ihe na-erughị 3%, njupụta ntụpọ na-egbu egbu bụ ihe na-erughị 0.3 particles / cm2, na epitaxial elu roughness mgbọrọgwụ pụtara square Ra. erughị 0.15 nm. Ihe ngosi usoro isi nke wafers epitaxial dị na ọkwa dị elu na ụlọ ọrụ ahụ.
Isi mmalite: Ngwa ụlọ ọrụ eletrọnịkị pụrụ iche
Odee: Xie Tianle, Li Ping, Yang Yu, Gong Xiaoliang, Ba Sai, Chen Guoqin, Wan Shengqiang
(48th Research Institute of China Electronics Technology Group Corporation, Changsha, Hunan 410111)
Oge nzipu: Sep-04-2024