Ugbu a, ụlọ ọrụ SiC na-agbanwe site na 150 mm (6 sentimita) ruo 200 mm (inch 8). Iji gboo mkpa ngwa ngwa maka nnukwu oke, ịdị elu SiC homoepitaxial wafers na ụlọ ọrụ, 150mm na 200mm4H-SiC homoepitaxial wafersA kwadebere nke ọma na ngwongwo ụlọ site na iji akụrụngwa uto 200mm SiC nke epitaxial emepụtara onwe ya. E mepụtara usoro homoepitaxial nke kwesịrị ekwesị maka 150mm na 200mm, nke ọnụ ọgụgụ epitaxial nwere ike karịa 60um / h. Mgbe ị na-ezute epitaxy dị elu, àgwà wafer epitaxial dị mma. The ọkpụrụkpụ uniformity nke 150 mm na 200 mmSiC epitaxial wafersEnwere ike ịchịkwa ya n'ime 1.5%, ịdị n'otu nke itinye uche na-erughị 3%, njupụta ntụpọ na-egbu egbu bụ ihe na-erughị 0.3 particles / cm2, na epitaxial surface roughness mgbọrọgwụ pụtara square Ra bụ ihe na-erughị 0.15nm, na ihe niile bụ isi usoro egosi dị na. ọkwa dị elu nke ụlọ ọrụ ahụ.
Silicon Carbide (SiC)bụ otu n'ime ndị nnọchianya nke ihe semiconductor ọgbọ nke atọ. Ọ nwere njiri mara nke ike mgbawa dị elu, ezigbo ikuku ọkụ, nnukwu ọkụ saturation eletrọn, yana nguzogide radieshon siri ike. Ọ gbasaara ikike nhazi ike nke ngwaọrụ ike nke ukwuu ma nwee ike izute ọrụ chọrọ nke ọgbọ na-esote nke ngwa eletriki eletrik maka ngwaọrụ nwere ike dị elu, obere nha, okpomọkụ dị elu, nnukwu radieshon na ọnọdụ ndị ọzọ dị oke egwu. Ọ nwere ike belata ohere, belata oriri ike ma belata ihe jụrụ oyi. O wetala mgbanwe mgbanwe n'ụgbọ ala ume ọhụrụ, njem ụgbọ oloko, grid smart na mpaghara ndị ọzọ. Ya mere, silicon carbide semiconductors aghọwo ndị a ghọtara dị ka ihe dị mma nke ga-eduga ọgbọ na-esote nke ike eletrik eletrik. N'ime afọ ndị na-adịbeghị anya, ekele maka nkwado iwu mba maka mmepe nke ụlọ ọrụ semiconductor nke ọgbọ nke atọ, nyocha na mmepe na iwu nke usoro ụlọ ọrụ ngwaọrụ SiC nke 150 mm agwụla na China, na nchekwa nke agbụ ụlọ ọrụ nwere. e kwenyesiri ike na ya. Ya mere, elekwasị anya nke ụlọ ọrụ ahụ ejiri nwayọọ nwayọọ gbanwee na njikwa ọnụ ahịa na nkwalite arụmọrụ. Dị ka e gosiri na Tebụl 1, ma e jiri ya tụnyere 150 mm, 200 mm SiC nwere ọnụ ọgụgụ dị elu nke itinye n'ọrụ, na mmepụta nke otu wafer ibe nwere ike ịbawanye ihe dị ka ugboro 1.8. Mgbe teknụzụ ahụ tolitere, ọnụahịa nrụpụta nke otu mgbawa nwere ike belata 30%. Ọganihu nkà na ụzụ nke 200 mm bụ ụzọ kpọmkwem nke "ịbelata ọnụ ahịa na ịba ụba arụmọrụ", ọ bụkwa isi ihe maka ụlọ ọrụ semiconductor nke mba m ka ọ "na-agba ọsọ yiri" ma ọ bụ ọbụna "edu".
Dị iche na usoro ngwaọrụ Si,SiC semiconductor ike ngwaọrụA na-ahazi ma kwadebe ya na akwa epitaxial dị ka isi nkuku. Epitaxial wafers bụ ihe dị mkpa maka ngwaọrụ ike SiC. Ogo nke oyi akwa epitaxial na-ekpebi kpọmkwem mkpụrụ nke ngwaọrụ ahụ, ọnụ ahịa ya na-akwụkwa 20% nke ọnụ ahịa nrụpụta mgbawa. Ya mere, uto epitaxial bụ njikọ etiti dị mkpa na ngwaọrụ ike SiC. A na-ekpebi oke oke nke usoro usoro epitaxial site na akụrụngwa epitaxial. Ka ọ dị ugbu a, ogo mpaghara nke 150mm SiC epitaxial equipment in China dị oke elu, mana nhazi nke 200mm na-aga n'azụ ọkwa mba ụwa n'otu oge ahụ. Ya mere, iji dozie mkpa ngwa ngwa na nsogbu ọkpọkọ nke nnukwu ihe na-emepụta ihe na-emepụta ihe na-emepụta ihe na-emepụta ihe na-emepụta ihe dị elu maka mmepe nke ụlọ ọrụ semiconductor nke ọgbọ nke atọ, akwụkwọ a na-ewebata 200 mm SiC epitaxial ngwá ọrụ nke ọma mepụtara na mba m. ma mụọ usoro epitaxial. Site optimizing usoro parameters dị ka usoro okpomọkụ, ebu gas eruba ọnụego, C / Si ratio, wdg, na ịta uniformity <3%, ọkpụrụkpụ na-abụghị uniformity <1.5%, roughness Ra <0.2 nm na egbu ntụpọ njupụta <0.3 grains / cm2 nke 150 mm na 200 mm SiC epitaxial wafers nwere onwe 200 mm silicon carbide epitaxial ọkụ na-enwetara. Usoro usoro akụrụngwa nwere ike gboo mkpa nke nkwadebe ngwaọrụ SiC dị elu.
1 Nnwale
1.1 Ụkpụrụ nkeSiC epitaxialusoro
Usoro uto homoepitaxial 4H-SiC na-agụnye usoro isi ụzọ abụọ, ya bụ, ọnọdụ okpomọkụ dị elu na-etching nke 4H-SiC mkpụrụ na usoro ntinye mmiri kemịkalụ. Ebumnuche bụ isi nke mkpụrụ n'ime ebe etching bụ iji wepụ mmebi nke subsurface nke mkpụrụ mgbe polishing wafer, mmiri mmiri na-eme ka ọ bụrụ ihe na-egbuke egbuke, akụkụ na oyi akwa oxide, na enwere ike ịmepụta usoro nkwụsị nke atọm mgbe niile n'elu ala site na etching. A na-eme etching n'ime ebe a na ikuku hydrogen. Dị ka usoro a chọrọ n'ezie, a pụkwara ịgbakwunye obere gas inyeaka, dị ka hydrogen chloride, propane, ethylene ma ọ bụ silane. Okpomọkụ nke in-situ hydrogen etching na-adịkarị karịa 1 600 ℃, na nrụgide nke ụlọ mmeghachi omume na-achịkwa n'okpuru 2 × 104 Pa n'oge usoro etching.
Mgbe etinyere elu nke mkpụrụ osisi site na in-situ etching, ọ na-abanye na usoro ntinye mmiri kemịkalụ dị elu, ya bụ, isi mmalite (dị ka ethylene/propane, TCS/silane), isi iyi doping (n-ụdị doping source nitrogen). , p-ụdị doping isi iyi TMAl), na gas inyeaka dị ka hydrogen chloride na-ebuga n'ime ụlọ mmeghachi omume site na nnukwu ikuku nke gas na-ebu (na-emekarị hydrogen). Mgbe gas na-emeghachi omume n'ime ụlọ mmeghachi omume okpomọkụ dị elu, akụkụ nke precursor na-emeghachi omume na kemịkalụ na adsorbs n'elu wafer, na otu-crystal homogeneous 4H-SiC epitaxial oyi akwa na kpọmkwem doping itinye uche, kpọmkwem ọkpụrụkpụ, na elu àgwà ka e guzobere. n'elu mkpụrụ ala na-eji otu kristal 4H-SiC mkpụrụ dị ka ndebiri. Ka ọtụtụ afọ nke nyocha teknụzụ gasịrị, teknụzụ homoepitaxial 4H-SiC etoola ma jiri ya mee ihe na mmepụta ụlọ ọrụ. Teknụzụ homoepitaxial 4H-SiC kacha eji eme ihe n'ụwa nwere njirimara abụọ:
(1) Iji anya-axis (n'ihe metụtara <0001> kristal ụgbọ elu, n'ebe <11-20> crystal direction) oblique ịkpụ mkpụrụ dị ka template, a elu-ọcha otu-kristal 4H-SiC epitaxial oyi akwa na-enweghị adịghị ọcha bụ. edebe na mkpụrụ n'ụdị nzọụkwụ-eruba ibu mode. N'oge mbụ 4H-SiC uto homoepitaxial ji mkpụrụ osisi kristal dị mma, ya bụ, ụgbọ elu <0001> Si maka uto. Njupụta nke nzọụkwụ atọm n'elu nke mkpụrụ kristal dị mma dị ala na mbara ala ndị ahụ obosara. Uto nucleation akụkụ abụọ dị mfe ime n'oge usoro epitaxy iji mepụta 3C crystal SiC (3C-SiC). Site na mbelata-axis, njupụta dị elu, warara obosara atomic nzọụkwụ nwere ike iwebata n'elu nke 4H-SiC <0001> mkpụrụ, na adsorbed precursor nwere ike iru n'ụzọ dị irè na-atomiki nzọụkwụ ọnọdụ na dịtụ ala ala ike site n'elu mgbasa. . N'ebe a na-aga n'ihu, atom / molecular group bonding position bụ ihe pụrụ iche, yabụ na usoro nrịbawanye uto, epitaxial oyi akwa nwere ike keta nke ọma Si-C okpukpu abụọ nke atomic Layer stacking usoro nke mkpụrụ iji mepụta otu kristal nwere otu kristal. oge dị ka substrate.
(2) A na-enweta uto epitaxial dị elu site na iwebata isi iyi silicon nwere chlorine. N'ime sistemu nchekwa ikuku kemịkalụ SiC, silane na propane (ma ọ bụ ethylene) bụ isi mmalite ntolite. N'ime usoro ịba ụba nke uto site n'ịba ụba ọnụego isi iyi nke uto, ka nguzozi akụkụ nke akụkụ silicon na-aga n'ihu na-abawanye, ọ dị mfe ịmepụta ụyọkọ silicon site na nucleation nke gas na-emekọ ihe, nke na-ebelata nke ukwuu ọnụego ojiji nke isi iyi silicon. Nhazi nke ụyọkọ silicon na-egbochi oke mmụba nke uto epitaxial. N'otu oge ahụ, ụyọkọ silicon nwere ike ịkpaghasị uto nrịba nke nzọụkwụ wee bute ntụpọ ntụpọ. Iji zere nucleation nke gas na-emekọ ihe ma na-amụba ọnụ ọgụgụ epitaxial, iwebata isi mmalite silicon nke chlorine bụ usoro bụ isi ugbu a iji welie ọnụ ọgụgụ uto epitaxial nke 4H-SiC.
1.2 200 mm (8-inch) SiC epitaxial akụrụngwa na usoro ọnọdụ
Nnwale ndị akọwara n'akwụkwọ a ka emere na 150/200 mm (6/8-inch) dakọtara monolithic na-ekpo ọkụ mgbidi SiC epitaxial akụrụngwa nke ụlọ ọrụ 48th Institute of China Electronics Technology Group Corporation mepụtara. Ọkụ epitaxial na-akwado ịbutu wafer na akpaghị aka zuru oke. Ọnụọgụ 1 bụ eserese schematic nke nhazi ime nke ime ụlọ mmeghachi omume nke akụrụngwa epitaxial. Dị ka e gosiri na foto 1, mgbidi dị n'èzí nke ụlọ mmeghachi omume bụ mgbịrịgba quartz nke nwere ihe mkpuchi mmiri na-eme ka mmiri dị jụụ, na n'ime mgbịrịgba bụ ọnụ ụlọ mmeghachi omume okpomọkụ, nke mejupụtara carbon mkpuchi ọkụ, nke dị elu dị ọcha. oghere graphite pụrụ iche, graphite gas-floating rotating base, wdg. A na-eji eriri induction cylindrical kpuchie mgbịrịgba quartz dum, yana Ụlọ mmeghachi omume dị n'ime mgbịrịgba bụ ọkụ eletrik na-ekpo ọkụ site na ọkụ induction ugboro ugboro. Dị ka egosiri na eserese 1 (b), gas na-ebu, gas mmeghachi omume, na doping gas niile na-agafe n'elu wafer na laminar kwụ ọtọ site na elu nke ọnụ ụlọ mmeghachi omume gaa na ala nke ụlọ mmeghachi omume ma na-ahapụ ya na ọdụ. njedebe gas. Iji hụ na nkwekọ n'ime wafer ahụ, wafer nke ikuku na-ese n'elu mmiri na-atụgharị mgbe niile n'oge usoro ahụ.
Mkpụrụ a na-eji na nnwale ahụ bụ azụmahịa 150 mm, 200 mm (6 sentimita, 8 sentimita asatọ) <1120> direction 4°off-angle conductive n-ụdị 4H-SiC nke nwere akụkụ abụọ na-egbu maramara SiC nke Shanxi Shuoke Crystal mepụtara. A na-eji Trichlorosilane (SiHCl3, TCS) na ethylene (C2H4) dị ka isi mmalite uto na nnwale usoro, nke a na-eji TCS na C2H4 dị ka isi iyi silicon na isi iyi carbon n'otu n'otu, nitrogen dị ọcha (N2) dị ka n- ụdị doping isi iyi, na hydrogen (H2) na-eji dị ka dilution gas na ebu gas. The okpomọkụ nso nke epitaxial usoro bụ 1 600 ~ 1 660 ℃, usoro mgbali bụ 8 × 103 ~ 12 × 103 Pa, na H2 ebu gas eruba ọnụego bụ 100 ~ 140 L / min.
1.3 Epitaxial wafer nnwale na njirimara
Fourier infrared spectrometer (onye na-emepụta akụrụngwa Thermalfisher, ụdị iS50) na onye na-enyocha ihe nyocha nke mercury (onye na-emepụta ngwa ọrụ Semilab, ụdị 530L) ka ejiri mara ihe pụtara na nkesa nke ọkpụrụkpụ oyi akwa epitaxial na itinye uche doping; A na-ekpebi oke na ntinye doping nke isi ihe ọ bụla na oyi akwa epitaxial site n'iwere ihe n'akụkụ ahịrị dayameta na-ejikọta akara nkịtị nke isi ihe ntụaka na 45 ° na etiti wafer na nkwụsị 5 mm. Maka wafer 150 mm, a na-ewere isi 9 n'otu ahịrị otu dayameta (dayameta abụọ na-adabere na ibe ha), na maka 200 mm wafer, a na-ewere isi 21, dị ka egosiri na Figure 2. Atomiki ike microscope (onye na-emepụta ngwá ọrụ). A na-eji Bruker, akara ngosi Dimension model) họrọ mpaghara 30 μm × 30 μm na mpaghara etiti yana mpaghara nsọtụ (mwepụ ihu 5 mm) Epitaxial wafer iji nwalee ịdị njọ nke elu epitaxial oyi akwa; A na-atụle ntụpọ nke oyi akwa epitaxial site na iji ihe nleba anya ntụpọ elu (onye na-emepụta ngwá ọrụ China Electronics Ihe oyiyi 3D bụ ihe mmetụta radar (ihe nlereanya Mars 4410 pro) sitere na Kefenghua.
Oge nzipu: Sep-04-2024