Ọka kwụ ọtọ na teknụzụ uto epitaxial-Ⅱ

2. Epitaxial mkpa ihe nkiri ibu

Mkpụrụ ahụ na-enye oyi akwa nkwado anụ ahụ ma ọ bụ ihe na-eduzi maka ngwaọrụ ike Ga2O3. Ihe oyi akwa dị mkpa na-esote bụ oyi akwa ọwa ma ọ bụ oyi akwa epitaxial ejiri maka mgbochi voltaji na njem ụgbọ. Iji mee ka voltaji ndakpọ ma belata nguzogide conduction, ọkpụrụkpụ a na-achịkwa na itinye uche doping, yana ezigbo ihe onwunwe, bụ ụfọdụ ihe achọrọ. A na-edobe akwa akwa Ga2O3 epitaxial dị elu site na iji molecular beam epitaxy (MBE), metal organic vapor deposition (MOCVD), halide vapor deposition (HVPE), pulsed laser deposition (PLD), na foogu CVD dabeere na usoro nkwụnye ego.

Isiokwu 2 Ụfọdụ teknụzụ epitaxial nnọchiteanya

2.1 MBE usoro

Teknụzụ MBE bụ onye ama ama maka ike ya itolite ihe nkiri β-Ga2O3 na-enweghị ntụpọ nwere ụdị n-ụdị doping a na-achịkwa ya n'ihi ebe oghere oghere dị elu yana ịdị ọcha ihe dị elu. N'ihi ya, ọ bụrụla otu n'ime teknụzụ ntinye ihe nkiri β-Ga2O3 kachasị amụ na enwere ike ịzụ ahịa. Tụkwasị na nke ahụ, usoro MBE na-edozikwa nke ọma nke ọma dị elu, heterostructure β- (AlXGa1-X) 2O3 / Ga2O3 thin film Layer. MBE nwere ike nyochaa nhazi elu na morphology ozugbo site na iji nhazi nke ọma nke oyi akwa site na iji ntụgharị uche dị elu eletriki diffraction (RHEED). Otú ọ dị, ihe nkiri β-Ga2O3 toro site na iji nkà na ụzụ MBE ka na-eche ọtụtụ ihe ịma aka ihu, dị ka obere uto na obere ihe nkiri. Ọmụmụ ihe ahụ chọpụtara na ọnụ ọgụgụ uto dị n'usoro nke (010)> (001)> (-201)> (100). N'okpuru obere ọnọdụ Ga-ọgaranya nke 650 ruo 750 ° C, β-Ga2O3 (010) na-egosipụta uto kachasị mma na elu dị larịị na oke uto. N'iji usoro a, β-Ga2O3 epitaxy nwetara nke ọma site na RMS siri ike nke 0.1 nm. β-Ga2O3 Na gburugburu Ga-ọgaranya, ihe nkiri MBE na-etolite na okpomọkụ dị iche iche na-egosi na ọnụ ọgụgụ ahụ. Novel Crystal Technology Inc. emeputala nke ọma epitaxially 10 × 15mm2 β-Ga2O3MBE wafers. Ha na-enye oke mma (010) gbakwasara β-Ga2O3 otu mkpụrụ kristal nwere ọkpụrụkpụ nke 500 μm na XRD FWHM n'okpuru 150 arc sekọnd. Mkpụrụ ahụ bụ Sn doped ma ọ bụ Fe doped. Mkpụrụ ihe na-eduzi Sn-doped nwere ntinye uche doping nke 1E18 ruo 9E18cm−3, ebe ihe mgbochi mgbochi nke ígwè-doped nwere ihe mgbochi dị elu karịa 10E10 Ω cm.

2.2 usoro MOCVD

MOCVD na-eji ogige organic metal metal dị ka ihe mmalite iji mepụta ihe nkiri dị mkpa, si otú a na-enweta mmepụta azụmahịa buru ibu. Mgbe ị na-eto Ga2O3 na-eji usoro MOCVD, trimethylgallium (TMGa), triethylgallium (TEGa) na Ga (dipentyl glycol formate) na-ejikarị dị ka isi iyi Ga, ebe H2O, O2 ma ọ bụ N2O na-eji dị ka ikuku oxygen. Uto na-eji usoro a na-achọkarị okpomọkụ dị elu (>800°C). Teknụzụ a nwere ikike iji nweta ntinye uche nke ndị na-ebu ibu dị ala na ngagharị elektrọn dị elu na nke dị ala, yabụ na ọ dị oke mkpa iji ghọta ngwaọrụ ike β-Ga2O3 dị elu. E jiri ya tụnyere usoro uto MBE, MOCVD nwere uru iji nweta oke uto nke ihe nkiri β-Ga2O3 n'ihi njirimara nke oke okpomọkụ na mmeghachi omume kemịkal.

Ọgụgụ 7 β-Ga2O3 (010) onyonyo AFM

Ọgụgụ 8 β-Ga2O3 Mmekọrịta dị n'etiti μna mpempe akwụkwọ na-atụ site na Ụlọ Nzukọ na okpomọkụ

2.3 HVPE usoro

HVPE bụ nkà na ụzụ epitaxial tozuru okè ma ejiriwo ya mee ihe na uto epitaxial nke III-V compound semiconductor. A maara HVPE maka ọnụ ahịa mmepụta ya dị ala, ọnụego uto ngwa ngwa, na ọkpụrụkpụ ihe nkiri dị elu. Ekwesiri iburu n'uche na HVPEβ-Ga2O3 na-egosipụtakarị ọdịdị ọdịdị elu na oke njupụta nke ntụpọ elu na olulu. Ya mere, a chọrọ usoro nchacha kemịkalụ na n'ibu tupu imepụta ngwaọrụ ahụ. Teknụzụ HVPE maka β-Ga2O3 epitaxy na-ejikarị GaCl gaseous na O2 dị ka ihe mmalite iji kwalite mmeghachi omume okpomọkụ dị elu nke matrix (001) β-Ga2O3. Ihe osise 9 na-egosi ọnọdụ elu na mmụba nke ihe nkiri epitaxial dị ka ọrụ okpomọkụ. N'afọ ndị na-adịbeghị anya, Japan Novel Crystal Technology Inc. enwetala nnukwu ọganiihu azụmahịa na HVPE homoepitaxial β-Ga2O3, nwere ọkpụrụkpụ epitaxial oyi akwa nke 5 ruo 10 μm na nha wafer nke 2 na 4 sentimita asatọ. Na mgbakwunye, 20 μm gbara ọkpụrụkpụ HVPE β-Ga2O3 homoepitaxial wafers nke China Electronics Technology Group Corporation mepụtara abanyekwala n'ọkwa azụmaahịa.

Ọgụgụ 9 usoro HVPE β-Ga2O3

2.4 PLD usoro

A na-ejikarị teknụzụ PLD na-echekwa ihe nkiri oxide dị mgbagwoju anya na heterostructures. N'oge usoro uto PLD, ike photon na-ejikọta ya na ihe ezubere iche site na usoro ikuku elektrọn. N'adịghị ka MBE, a na-emepụta ihe ndị na-emepụta PLD site na laser radieshon na ike dị oke elu (> 100 eV) ma mesịa tinye ya na mpempe ọkụ. Otú ọ dị, n'oge usoro nkwụsịtụ, ụfọdụ ihe ndị na-eme ka ike dị elu ga-emetụta kpọmkwem ihe dị n'elu, na-emepụta ntụpọ ntụpọ ma si otú ahụ na-ebelata àgwà nke ihe nkiri ahụ. Dị ka usoro MBE, RHEED nwere ike iji nyochaa nhazi elu na morphology nke ihe ahụ ozugbo n'oge usoro ntinye nke PLD β-Ga2O3, na-enye ndị na-eme nchọpụta ohere ịnweta ozi uto nke ọma. A na-atụ anya na usoro PLD ga-eto ihe nkiri β-Ga2O3 na-eduzi nke ukwuu, na-eme ka ọ bụrụ ngwọta kọntaktị ohmic kachasị na ngwaọrụ ike Ga2O3.

Ọgụgụ 10 onyonyo AFM nke Si doped Ga2O3

2.5 MIST-CVD usoro

MIST-CVD bụ teknụzụ uto ihe nkiri dị mfe ma dịkwa ọnụ ahịa. Usoro CVD a gụnyere mmeghachi omume nke ịfesa ihe nrịbama atomized n'elu mkpụrụ iji nweta ntinye ihe nkiri dị mkpa. Otú ọ dị, ka ọ dị ugbu a, Ga2O3 toro site na iji alụlụ CVD ka na-enweghị ezigbo ọkụ eletrik, nke na-ahapụ ọtụtụ ohere maka mmelite na njikarịcha n'ọdịnihu.