Kedu ka akwa epitaxial si enyere ngwaọrụ semiconductor aka?

Mmalite nke aha epitaxial wafer

Nke mbụ, ka anyị gbasaa echiche dị nta: nkwadebe wafer gụnyere njikọ abụọ dị mkpa: nkwadebe mkpụrụ na usoro epitaxial. Mkpụrụ ahụ bụ wafer nke ihe semiconductor mere otu kristal. Mkpụrụ ahụ nwere ike ịbanye ozugbo na usoro nrụpụta wafer iji mepụta ngwaọrụ semiconductor, ma ọ bụ enwere ike ịhazi ya site na usoro epitaxial iji mepụta wafers epitaxial. Epitaxy na-ezo aka na usoro nke na-eto eto ọhụrụ oyi akwa nke otu kristal na otu mkpụrụ kristal nke ejiri nlezianya mee ya site na ịkpụ, ichikota, polishing, wdg. Otu kristal ọhụrụ nwere ike ịbụ otu ihe ahụ dị ka mkpụrụ, ma ọ bụ ọ nwere ike ịbụ a. ihe dị iche iche (homogeneous) epitaxy ma ọ bụ heteroepitaxy). N'ihi na oyi akwa kristal ọhụrụ ahụ na-agbatị ma na-eto dịka akụkụ kristal nke mkpụrụ ahụ si dị, a na-akpọ ya oyi akwa epitaxial (ọkpụrụkpụ na-abụkarị micron ole na ole, na-ewere silicon dị ka ihe atụ: ihe ọ pụtara silicon epitaxial growth is on a silicon single). mkpụrụ kristal nwere ụfọdụ nghazi kristal nke nwere ezigbo ihe owuwu lattice na ihe mgbochi dị iche iche na nha kristal dị ka mkpụrụ na-etolite), na mkpụrụ nwere epitaxial. A na-akpọ oyi akwa epitaxial wafer (epitaxial wafer = epitaxial Layer + substrate). Mgbe emebere ngwaọrụ ahụ na oyi akwa epitaxial, a na-akpọ ya epitaxy dị mma. Ọ bụrụ na emebere ngwaọrụ ahụ na mkpụrụ, a na-akpọ ya reverse epitaxy. N'oge a, oyi akwa epitaxial na-arụ ọrụ nkwado naanị.

Wafer na-egbu maramara

Ụzọ uto epitaxial

Molecular beam epitaxy (MBE): Ọ bụ teknụzụ na-eto eto nke semiconductor emere n'okpuru ọnọdụ oghere dị elu. Na usoro a, a na-ekpochapụ ihe ndị na-esi na ya pụta n'ụdị atom ma ọ bụ molecules wee tinye ya na mkpụrụ osisi kristal. MBE bụ teknụzụ na-eto eto nke ọma na nke nwere ike ịchịkwa semiconductor nke nwere ike ịchịkwa nha nke ihe echekwara na ọkwa atọm.
Metal organic CVD (MOCVD): N'ime usoro MOCVD, a na-enyefe organic metal na hydride gas N gas nwere ihe ndị a chọrọ na mkpụrụ na ọnọdụ okpomọkụ kwesịrị ekwesị, na-enweta mmeghachi omume kemịkalụ iji mepụta ihe semiconductor chọrọ, a na-echekwa ya na mkpụrụ. na, ebe a na-ahapụ ogige ndị fọdụrụ na ngwaahịa mmeghachi omume.
Vapor phase epitaxy (VPE): Vapor phase epitaxy bụ teknụzụ dị mkpa a na-ejikarị eme ihe na mmepụta nke ngwaọrụ semiconductor. Ụkpụrụ bụ isi bụ ibufe vapor nke ihe elemental ma ọ bụ ogige na gas na-ebu, na itinye kristal na mkpụrụ site na mmeghachi omume kemịkal.

Kedu nsogbu usoro epitaxy na-edozi?

Naanị nnukwu otu ihe kristal enweghị ike gboo mkpa na-eto eto nke imepụta ngwaọrụ semiconductor dị iche iche. Ya mere, e mepụtara uto epitaxial, teknụzụ na-eto eto kristal dị obere, na njedebe nke afọ 1959. Ya mere, olee otu ntinye aka na nkà na ụzụ epitaxy nwere maka ọganihu nke ihe?

Maka silicon, mgbe teknụzụ na-eto eto nke silicon epitaxial malitere, ọ bụ n'ezie oge siri ike maka mmepụta nke silicon elu-frequency and high-power transistor. Site n'echiche nke ụkpụrụ transistor, iji nweta nnukwu ugboro na ike dị elu, mgbawa voltaji nke ebe ndị na-anakọta ihe ga-adị elu na nguzogide usoro ahụ ga-adị ntakịrị, ya bụ, nkwụsị nke saturation voltaji ga-adị ntakịrị. Nke mbụ na-achọ ka ihe mgbochi nke ihe dị na ebe a na-achịkọta kwesịrị ịdị elu, ebe nke ikpeazụ na-achọ ka ihe mgbochi nke ihe dị na mpaghara nchịkọta kwesịrị ịdị ala. Mpaghara abụọ a na-emegiderịta onwe ha. Ọ bụrụ na ọkpụkpụ nke ihe dị na mpaghara nchịkọta na-ebelata iji belata nguzogide usoro, ihe mkpuchi silicon ga-adị oke mkpa ma na-esighi ike na-edozi ya. Ọ bụrụ na ebelata resistivity nke ihe onwunwe, ọ ga-emegide ihe mbụ chọrọ. Otú ọ dị, mmepe nke nkà na ụzụ epitaxial enwewo ihe ịga nke ọma. dozie ihe isi ike a.

Ngwọta: Too oyi akwa epitaxial na-eguzogide dị elu n'elu mkpụrụ nguzogide dị oke ala, ma mee ngwaọrụ ahụ na oyi akwa epitaxial. Nke a na-eme ka ọkpụkpụ epitaxial dị elu na-eme ka ọ dị elu na-eme ka tube ahụ nwee nnukwu nkwụsịtụ nke nkwụsịtụ, ebe ọ bụ na-ebelata nkwụsị nke mkpụrụ osisi ahụ, si otú ahụ na-ebelata nkwụsị nke saturation voltaji, si otú ahụ dozie esemokwu n'etiti abụọ ahụ.

Na mgbakwunye, teknụzụ epitaxy dị ka vapor phase epitaxy na mmiri mmiri epitaxy nke GaAs na ndị ọzọ III-V, II-VI na ihe ndị ọzọ molekụla compound semiconductor ihe emebekwara nke ukwuu ma bụrụkwa ihe ndabere maka ọtụtụ ngwa ngwa ngwa ndakwa nri, ngwaọrụ optoelectronic, ike. Ọ bụ teknụzụ usoro dị mkpa maka imepụta ngwaọrụ, ọkachasị ngwa na-aga nke ọma nke molekụla beam na teknụzụ ikuku ikuku nke metal organic na akwa akwa, superlatices, olulu mmiri quantum, superlatices gbawara agbawa, na ọkwa atomiki thin-layer epitaxy, nke bụ nzọụkwụ ọhụrụ na nyocha semiconductor. Mmepe nke "engine belt engineering" n'ọhịa etinyela ntọala siri ike.

N'ime ngwa bara uru, a na-eme ngwaọrụ semiconductor wide bandgap na oyi akwa epitaxial, na silicon carbide wafer n'onwe ya na-eje ozi dị ka mkpụrụ. Ya mere, njikwa nke oyi akwa epitaxial bụ akụkụ dị mkpa nke nnukwu ụlọ ọrụ semiconductor bandgap.

7 isi nka na teknụzụ epitaxy

1. Elu (dị ala) na-eguzogide epitaxial n'ígwé nwere ike ịbụ epitaxially toro na ala (elu) na-eguzogide mkpụrụ.
2. N (P) ụdị epitaxial oyi akwa nwere ike na-epitaxially toro na P (N) ụdị mkpụrụ na-etolite a PN junction ozugbo. Enweghị nsogbu nkwụghachi ụgwọ mgbe ị na-eji usoro mgbasa ozi iji mee njikọ PN na otu mkpụrụ kristal.
3. Ejikọtara ya na teknụzụ nkpuchi, a na-eme uto epitaxial na-ahọrọ na mpaghara ndị a họpụtara ahọpụta, na-emepụta ọnọdụ maka mmepụta nke sekit jikọtara ọnụ na ngwaọrụ nwere akụkụ pụrụ iche.
4. Ụdị na ntinye uche nke doping nwere ike gbanwee dịka mkpa dị n'oge usoro uto epitaxial. Mgbanwe nke itinye uche nwere ike ịbụ mgbanwe mberede ma ọ bụ mgbanwe ngwa ngwa.
5. Ọ nwere ike na-eto eto dị iche iche, multi-layered, multi-component compounds na ultra-thin layers with variable components.
6. Enwere ike ime uto nke epitaxial na okpomọkụ dị ala karịa ebe mgbaze nke ihe ahụ, ọnụ ọgụgụ na-eto eto bụ nke a na-achịkwa, na epitaxial ibu nke ọkwa atomic nwere ike nweta.
7. Ọ nwere ike itolite otu ihe kristal na-enweghị ike ịdọrọ, dị ka GaN, otu kristal n'ígwé nke tertiary na quaternary ogige, wdg.