Wide bandgap (WBG) semiconductors nke silicon carbide (SiC) na gallium nitride (GaN) nọchitere anya nlebara anya zuru ebe niile. Ndị mmadụ nwere atụmanya dị elu maka atụmanya ngwa nke silicon carbide na ụgbọ ala eletrik na grids ike, yana atụmanya ngwa nke gallium nitride na chaja ngwa ngwa. N'ime afọ ndị na-adịbeghị anya, nyocha na ihe Ga2O3, AlN na diamond enweela ọganihu dị ukwuu, na-eme ka ihe ndị na-eme ihe nkiri na-eme ihe na-eme ka ọ bụrụ ihe na-elekwasị anya. N'ime ha, gallium oxide (Ga2O3) bụ ihe na-apụta ultra-wide-bandgap semiconductor ihe nwere oghere band nke 4.8 eV, ikike mmebi iwu dị egwu nke ihe dị ka 8 MV cm-1, ike saturation nke ihe dịka 2E7cm s-1, na ihe dị elu nke Baliga dị elu nke 3000, na-enweta nlebara anya zuru oke n'ọhịa nke voltaji dị elu na eletrik eletrik dị elu.
1. Gallium oxide ihe e ji mara
Ga2O3 nwere nnukwu ọdịiche dị iche iche (4.8 eV), a na-atụ anya na ọ ga-enweta ma elu na-eguzogide voltaji na ike ike dị elu, ma nwee ike inwe ike ime mgbanwe voltaji dị elu na nkwụsi ike dị ntakịrị, na-eme ka ha bụrụ ebe nyocha nke ugbu a. Na mgbakwunye, Ga2O3 ọ bụghị naanị nwere ọmarịcha ihe onwunwe, kamakwa ọ na-enye ụdị teknụzụ doping dị iche iche na-agbanwe ngwa ngwa, yana uto mkpụrụ dị ala na teknụzụ epitaxy. Ka ọ dị ugbu a, a chọpụtala usoro kristal ise dị iche iche na Ga2O3, gụnyere corundum (α), monoclinic (β), spinel nwere nkwarụ (γ), cubic (δ) na orthorhombic (ɛ). Nkwụsi ike nke thermodynamic bụ, n'usoro, γ, δ, α, ɛ, na β. Ọ dị mma ịmara na monoclinic β-Ga2O3 bụ nke kachasị kwụsiri ike, ọkachasị na oke okpomọkụ, ebe usoro ndị ọzọ na-agbanwe n'elu ụlọ okpomọkụ ma na-agbanwe n'ime oge β n'okpuru ọnọdụ okpomọkụ akọwapụtara. Ya mere, mmepe nke ngwaọrụ ndị dabeere na β-Ga2O3 aghọwo isi ihe na-elekwasị anya n'ọhịa nke ọkụ eletrik na afọ ndị na-adịbeghị anya.
Tebụl 1 Ntụle ụfọdụ akụkụ ihe onwunwe semiconductor
E gosipụtara usoro kristal nke monoclinicβ-Ga2O3 na Tebụl 1. Ihe ntinye ya na-agụnye a = 12.21 Å, b = 3.04 Å, c = 5.8 Å, na β = 103.8 °. Mkpụrụ ndụ otu ahụ nwere atọm Ga(I) nwere nhazi tetrahedral gbagọrọ agbagọ na atọm Ga(II) nwere nchikota octahedral. Enwere nhazi atọ dị iche iche nke atọm oxygen n'usoro "cubic agbagọ", gụnyere atọm O(I) na O (II) a na-ahazi triangularly na otu tetrahedrally coordinated O(III) atọm. Nchikota nke ụdị abụọ a nke nhazi atomic na-eduga na anisotropy nke β-Ga2O3 nwere ihe pụrụ iche na physics, chemical corrosion, optics and electronics.
Ọgụgụ 1 Eserese nhazi nhazi nke monoclinic β-Ga2O3 crystal
Site na echiche nke ike band theory, opekempe uru nke conduction band nke β-Ga2O3 sitere na ike steeti kwekọrọ na 4s0 ngwakọ orbit nke Ga atom. A na-atụ ihe dị iche iche ike n'etiti uru kacha nta nke eriri conduction na ọkwa ike agụụ (electron affinity energy). bụ 4 eV. A na-atụ oke elektrọn dị irè nke β-Ga2O3 dị ka 0.28-0.33 m na njikwa eletrọnịkị ya dị mma. Agbanyeghị, valence band kacha na-egosipụta usoro Ek na-emighị emi nke nwere curvature dị ala yana mpaghara O2p orbitals siri ike, na-atụ aro na etinyere oghere ndị ahụ. Àgwà ndị a na-ebute nnukwu ihe ịma aka iji nweta p-ụdị doping na β-Ga2O3. Ọbụlagodi na enwere ike nweta ụdị doping P, oghere μ na-anọgide na ọkwa dị ala. 2. Uto nke nnukwu gallium oxide otu kristal Ka ọ dị ugbu a, usoro uto nke β-Ga2O3 nnukwu mkpụrụ kristal bụ tumadi usoro ịdọrọ kristal, dị ka Czochralski (CZ), usoro nri ihe nkiri na-akọwa nke ọma (Edge -Defined film-Fed). , EFG), Bridgman (rtical ma ọ bụ kehoraizin Bridgman, HB ma ọ bụ VB) na floating zone (floating zone, FZ) technology. N'ime usoro niile, a na-atụ anya na Czochralski na usoro nri ihe nkiri dị n'akụkụ ọnụ ga-abụ ụzọ kachasị mma maka mmepụta nke β-Ga 2O3 wafers n'ọdịnihu, n'ihi na ha nwere ike ime n'otu oge nweta nnukwu mpịakọta na njupụta dị ala. Ruo ugbu a, Japan Novel Crystal Technology achọpụtala matriks azụmahịa maka agbaze agbaze β-Ga2O3.
2.1 Usoro Czochralski
Ụkpụrụ nke usoro Czochralski bụ na a na-ekpuchi mkpụrụ osisi oyi akwa, mgbe ahụ, otu kristal na-eji nwayọọ nwayọọ wepụ ya na agbaze. Usoro Czochralski na-adịwanye mkpa maka β-Ga2O3 n'ihi ọnụ ahịa ya na-efu, ike dị ukwuu, na nnukwu mkpụrụ osisi kristal dị elu. Otú ọ dị, n'ihi nrụgide okpomọkụ n'oge okpomọkụ dị elu nke Ga2O3, evaporation nke otu kristal, agbaze ihe, na mmebi nke Ir crucible ga-eme. Nke a bụ n'ihi ihe isi ike n'inweta obere doping n-ụdị na Ga2O3. Iwebata ikuku oxygen kwesịrị ekwesị n'ime ikuku uto bụ otu ụzọ isi dozie nsogbu a. Site na njikarịcha, 2-inch β-Ga2O3 dị elu nke nwere ọnụọgụ eletrọn n'efu nke 10 ^ 16 ~ 10 ^ 19 cm-3 na njupụta eletrọn kacha nke 160 cm2 / Vs ejirila usoro Czochralski toro nke ọma.
Ọgụgụ 2 Otu kristal nke β-Ga2O3 toro site na usoro Czochralski
2.2 Usoro nri ihe nkiri akọwapụtara nke ọma
A na-ahụta usoro nri ihe nkiri dị mkpa nke kọwapụtara dị ka onye na-eduga n'ọsọ maka nrụpụta azụmaahịa nke nnukwu mpaghara Ga2O3 otu kristal. Ụkpụrụ nke usoro a bụ itinye agbaze n'ime ihe nkedo nwere oghere capillary, na agbaze na-ebili na ebu site na capillary edinam. N'elu, ihe nkiri dị gịrịgịrị na-etolite ma gbasaa n'akụkụ niile ebe a na-eme ka ọ bụrụ crystallize site na mkpụrụ kristal. Tụkwasị na nke a, enwere ike ịchịkwa akụkụ nke elu ihe akpụ akpụ iji mepụta kristal na flakes, tubes, ma ọ bụ geometry ọ bụla achọrọ. Usoro nri ihe nkiri dị n'ọnụ akọwapụtara nke Ga2O3 na-enye ọnụego uto ngwa ngwa yana dayameta buru ibu. Ọgụgụ 3 na-egosi eserese nke otu kristal β-Ga2O3. Tụkwasị na nke ahụ, n'ihe gbasara nha nha, 2-inch na 4-inch β-Ga2O3 substrates nwere nghọta dị mma na ịdị n'otu ka a na-ere ahịa, ebe a na-egosipụta ntinye 6-inch na nyocha maka ịzụ ahịa n'ọdịnihu. N'oge na-adịbeghị anya, nnukwu okirikiri otu-crystal nnukwu ihe abụrụla nke nwere ntụzịaka (-201). Tụkwasị na nke ahụ, usoro ntinye ihe nkiri β-Ga2O3 nke akọwapụtara nke ọma na-akwalitekwa doping nke ihe metal mgbanwe, na-eme ka nyocha na nkwadebe nke Ga2O3 kwe omume.
Ọgụgụ 3 β-Ga2O3 otu kristal tolitere site na usoro nri ihe nkiri akọwapụtara nke ọma
2.3 usoro Bridgeman
Na usoro Bridgeman, a na-emepụta kristal na crocible nke ejiri nwayọọ nwayọọ na-ebugharị site na gradient okpomọkụ. Enwere ike ịme usoro ahụ na ntụgharị kwụ ọtọ ma ọ bụ kwụ ọtọ, na-ejikarị eriri na-atụgharị. Ọ dị mma ịmara na usoro a nwere ike ma ọ bụ ghara iji mkpụrụ kristal. Ndị na-ahụ maka Bridgman ọdịnala enweghị nhụta anya kpọmkwem maka usoro ịgbaze na usoro uto kristal na ha ga-ejikwa nkenke dị elu jikwaa okpomọkụ. A na-eji usoro Bridgman kwụ ọtọ eme ihe maka uto β-Ga2O3 ma mara ya maka ike itolite na gburugburu ikuku. N'oge usoro uto nke Bridgman kwụ ọtọ, a na-edobe ngụkọta mfu nke gbazee na crucible n'okpuru 1%, na-eme ka uto nke nnukwu kristal β-Ga2O3 nwere obere mfu.
Ọgụgụ 4 Otu kristal nke β-Ga2O3 toro site na usoro Bridgeman
2.4 Usoro mpaghara na-ese n'elu mmiri
Usoro mpaghara na-ese n'elu mmiri na-edozi nsogbu nke mmetọ kristal site na ihe ndị na-egbuke egbuke ma na-ebelata ọnụ ahịa dị elu jikọtara ya na nnukwu okpomọkụ na-eguzogide ọgwụ infrared. N'oge usoro uto a, agbaze nwere ike ikpo ọkụ site na oriọna kama isi iyi RF, si otú a na-eme ka ihe ndị a chọrọ maka akụrụngwa na-eto eto dị mfe. Ọ bụ ezie na ọdịdị na kristal nke β-Ga2O3 toro site na usoro mpaghara na-ese n'elu mmiri adịbeghị mma, usoro a na-emepe usoro na-ekwe nkwa maka itolite β-Ga2O3 dị ọcha n'ime otu kristal na-emefu ego.
Ọgụgụ 5 β-Ga2O3 otu kristal toro site na usoro mpaghara na-ese n'elu mmiri.
Oge nzipu: Mee-30-2024