Mmetụta nke mkpụrụ osisi SiC na ihe epitaxial na njirimara ngwaọrụ MOSFET

Nrụrụ triangular

Nrụrụ triangular bụ ntụpọ morphological kacha egbu egbu na ọkwa SiC epitaxial. Ọnụ ọgụgụ dị ukwuu nke akwụkwọ akụkọ egosila na nhazi nke ntụpọ triangular metụtara ụdị kristal 3C. Otú ọ dị, n'ihi usoro uto dị iche iche, ọdịdị ọdịdị nke ọtụtụ ntụpọ triangular na elu nke epitaxial oyi akwa dị nnọọ iche. Enwere ike kewaa ya na ụdị ndị a:

(1) Enwere ntụpọ triangular nwere nnukwu ihe dị n'elu

Ụdị ntụpọ triangular a nwere nnukwu akụkụ okirikiri dị n'elu, nke nwere ike ịkpata ihe na-adaba n'oge usoro uto. Enwere ike ịhụ obere mpaghara triangular nwere elu siri ike gbadata site na vertex a. Nke a bụ n'ihi n'eziokwu na n'oge usoro epitaxial, a na-emepụta ihe abụọ dị iche iche 3C-SiC n'usoro n'usoro na mpaghara triangular, nke a na-emepụta oyi akwa mbụ na interface ma na-eto site na 4H-SiC nzọụkwụ. Ka ọkpụrụkpụ nke epitaxial oyi akwa na-abawanye, nke abụọ oyi akwa nke 3C polytype nukleates na-eto eto na obere triangular olulu, ma 4H uto nzọụkwụ anaghị ekpuchi kpamkpam 3C polytype ebe, na-eme ka V-ụdị uzo uzo ebe 3C-SiC ka doro anya. anya

(2) Enwere obere ihe dị n'elu na ntụpọ triangular nwere elu siri ike

Ihe ndị dị na vertices nke ụdị ntụpọ triangular a pere mpe, dịka egosiri na eserese 4.2. Na ọtụtụ n'ime triangular mpaghara na-kpuchie site nzọụkwụ eruba nke 4H-SiC, ya bụ, dum 3C-SiC oyi akwa na-kpamkpam agbakwunyere n'okpuru 4H-SiC oyi akwa. Naanị nzọụkwụ uto nke 4H-SiC ka enwere ike ịhụ n'elu ntụpọ triangular, mana usoro ndị a buru ibu karịa usoro uto kristal 4H.

(3) Nrụrụ triangular nwere elu dị larịị

Ụdị nrụrụ triangular a nwere ọdịdị dị mma n'elu ala, dịka egosiri na foto 4.3. Maka ntụpọ triangular dị otú ahụ, akwa 3C-SiC na-ekpuchi ya site na nrịgo nke 4H-SiC, na ụdị kristal 4H dị n'elu na-eto nke ọma ma dị nro.

Nrụrụ olulu epitaxial

Ọkụ Epitaxial (Pits) bụ otu n'ime ntụpọ morphology na-ahụkarị, a na-egosipụtakwa ọdịdị ọdịdị elu ha na usoro nhazi ha na foto 4.4. Ebe ebe a na-eme ka olulu mmiri na-emepụta eri (TD) na-ahụ anya mgbe KOH etching na azụ nke ngwaọrụ ahụ nwere akwụkwọ ozi doro anya na ọnọdụ nke olulu epitaxial tupu nkwadebe ngwaọrụ, na-egosi na nhazi nke olulu epitaxial na-ejikọta ya na nkwụsị nke eriri.

ntụpọ karọt

Nrụrụ karọt bụ ntụpọ elu na-ahụkarị na 4H-SiC epitaxial layers, na ụdị ọdịdị ha na-egosipụta na foto 4.5. A na-akọ na ntụpọ karọt na-etolite site na nrụrụ aka nke Franconian na prismatic stacking emezighị emezi nke dị n'ụgbọelu basal jikọtara site na nkwụsị ụkwụ dịka nkwụsịtụ. A kọwokwa na nhazi nke ntụpọ karọt metụtara TSD na mkpụrụ. Tsuchida H. et al. chọpụtara na njupụta nke ntụpọ karọt na oyi akwa epitaxial dabara na njupụta nke TSD na mkpụrụ. Na site n'ịtụle ihe oyiyi morphology dị n'elu tupu na mgbe uto epitaxial gasịrị, enwere ike ịhụ ntụpọ karọt niile a na-ahụ anya kwekọrọ na TSD na mkpụrụ. Wu H. et al. jiri njirimara agbasasịsa Raman chọpụta na ntụpọ karọt enweghị ụdị kristal 3C, kama ọ bụ naanị 4H-SiC polytype.

Mmetụta ntụpọ triangular na njirimara ngwaọrụ MOSFET

Ọgụgụ 4.7 bụ ihe ndekọ akụkọ ihe mere eme nke nkesa ndekọ ọnụ ọgụgụ nke njirimara ise nke ngwaọrụ nwere ntụpọ triangular. Ahịrị nwere ntụpọ na-acha anụnụ anụnụ bụ ahịrị nkewa maka mmebi njirimara ngwaọrụ, na ahịrị ntụpọ uhie bụ ahịrị nkewa maka ọdịda ngwaọrụ. Maka ọdịda ngwaọrụ, ntụpọ triangular nwere mmetụta dị ukwuu, na ọdịda ọdịda karịrị 93%. Nke a bụ n'ihi mmetụta nke nrụrụ triangular na ngbanwe nke ngwaọrụ. Ihe ruru 93% nke ngwaọrụ nwere ntụpọ triangular abawanyela nke ukwuu mgbawa azụ. Tụkwasị na nke ahụ, ntụpọ triangular na-enwekwa mmetụta dị egwu na njirimara nkwụsị nke ọnụ ụzọ ámá, na ọnụ ọgụgụ mmebi nke 60%. Dị ka e gosiri na Tebụl 4.2, maka nbibi voltaji nke ọnụ ụzọ na mmebi njirimara diode, mmetụta nke ntụpọ triangular dị ntakịrị, na oke mmebi bụ 26% na 33% n'otu n'otu. N'ihe banyere ime ka mmụba nke na-eguzogide, mmetụta nke ntụpọ triangular adịghị ike, na mmebi mmebi bụ ihe dịka 33%.

Mmetụta ntụpọ olulu epitaxial na njirimara ngwaọrụ MOSFET

Onyonyo 4.8 bụ ihe ndekọ akụkọ ihe mere eme nke nkesa ọnụ ọgụgụ nke njirimara ise nke ngwaọrụ nwere ntụpọ olulu epitaxial. Ahịrị nwere ntụpọ na-acha anụnụ anụnụ bụ ahịrị nkewa maka mmebi njirimara ngwaọrụ, na ahịrị ntụpọ uhie bụ ahịrị nkewa maka ọdịda ngwaọrụ. Enwere ike ịhụ site na nke a na ọnụ ọgụgụ ngwaọrụ ndị nwere ntụpọ olulu epitaxial na nlele SiC MOSFET bụ ọnụ ọgụgụ nke ngwaọrụ nwere ntụpọ triangular. Mmetụta nke ntụpọ olulu epitaxial na njirimara ngwaọrụ dị iche na nke ntụpọ triangular. N'ihe gbasara ọdịda ngwaọrụ, ọdịda nke ngwaọrụ nwere ntụpọ olulu epitaxial bụ naanị 47%. E jiri ya tụnyere ntụpọ triangular, mmetụta nke ntụpọ olulu epitaxial na njiri ngbanwe azụ na njirimara ntapu ọnụ ụzọ nke ngwaọrụ ahụ na-ebelata nke ukwuu, yana nbibi nke 53% na 38% n'otu n'otu, dị ka egosiri na Tebụl 4.3. N'aka nke ọzọ, mmetụta nke ntụpọ olulu epitaxial na njirimara voltaji ọnụ ụzọ, njirimara conduction diode ahụ na nguzogide dị ukwuu karịa nke ntụpọ triangular, na oke mbibi ruru 38%.

N'ozuzu, ntụpọ morphological abụọ, ya bụ triangles na olulu epitaxial, nwere mmetụta dị ukwuu na ọdịda na nbibi nke ngwaọrụ SiC MOSFET. Ịdị adị nke nrụrụ triangular bụ nke kacha egbu egbu, yana ọnụego ọdịda ruru 93%, bụ nke egosipụtara dị ka mmụba dị ukwuu na mwepu nke ngwaọrụ ahụ. Ngwa ndị nwere ntụpọ olulu epitaxial nwere ọdịda ọdịda dị ala nke 47%. Otú ọ dị, ntụpọ olulu epitaxial na-enwe mmetụta dị ukwuu na voltaji ọnụ ụzọ ngwaọrụ, njirimara conduction diode na nguzogide karịa ntụpọ triangular.