SiC txheej graphite MOCVD Wafer nqa, Graphite Susceptors rau SiC Epitaxy,
Cov khoom siv carbon, Graphite Susceptors, Graphite Trays, SiC Epitaxy, Wafer Susceptors,

CVD-SiC txheej muaj cov yam ntxwv ntawm cov qauv zoo sib xws, cov khoom siv compact, kub tsis kam, oxidation tsis kam, siab purity, acid & alkali tsis kam thiab organic reagent, nrog lub cev ruaj khov thiab tshuaj lom neeg.

Piv nrog cov khoom siv graphite siab, graphite pib oxidize ntawm 400C, uas yuav ua rau poob ntawm cov hmoov vim oxidation, ua rau ib puag ncig muaj kuab paug rau peripheral li thiab lub tshuab nqus tsev chamber, thiab ua rau impurities ntawm high-purity ib puag ncig.

Txawm li cas los xij, SiC txheej tuaj yeem tswj lub cev thiab tshuaj lom neeg ruaj khov ntawm 1600 degrees, Nws yog dav siv hauv kev lag luam niaj hnub, tshwj xeeb tshaj yog hauv kev lag luam semiconductor.

Peb lub tuam txhab muab SiC txheej txheej txheem kev pab cuam los ntawm CVD txoj kev nyob rau saum npoo ntawm graphite, ceramics thiab lwm yam ntaub ntawv, kom tshwj xeeb gases uas muaj carbon thiab silicon react ntawm kub kom tau siab purity SiC molecules, molecules tso rau saum npoo ntawm cov ntaub ntawv coated, tsim SIC tiv thaiv txheej. SIC tsim yog ruaj khov rau graphite puag, muab cov graphite puag tshwj xeeb, yog li ua rau saum npoo ntawm graphite compact, Porosity-dawb, kub tsis kam, corrosion kuj thiab oxidation kuj.

Daim ntawv thov:

Cov yam ntxwv tseem ceeb:

1. Kub oxidation kuj:

oxidation kuj tseem zoo heev thaum kub siab li 1700 C.

2. High purity: ua los ntawm cov tshuaj vapor deposition nyob rau hauv siab kub chlorination mob.

3. Erosion kuj: siab hardness, compact nto, zoo hais.

4. Corrosion kuj: acid, alkali, ntsev thiab organic reagents.

Main Specifications ntawm CVD-SIC Txheej:

Muaj peev xwm muab khoom:

10000 Daim / Daim ib hlis
Ntim & Xa khoom:
Packing: Standard & Strong Packing
Poly hnab + Box + Carton + Pallet
Chaw nres nkoj:
Ningbo/Shenzhen/Shanghai
Lub Sijhawm Lead: