Crystal loj hlob rauv yog cov khoom siv tseem ceeb rausilicon carbidecrystal kev loj hlob. Nws zoo ib yam li cov tsoos crystalline silicon qib siv lead ua kev loj hlob rauv. Lub cub tawg qauv tsis yog qhov nyuaj heev. Nws yog tsuas yog tsim los ntawm lub cub tawg lub cev, cua sov system, coil kis tau tus mob mechanism, nqus tau thiab ntsuas qhov system, roj txoj kev system, cua txias system, tswj system, thiab lwm yam.silicon carbide siv lead uazoo li qhov zoo, qhov loj me, conductivity thiab lwm yam.
Ntawm ib sab, qhov kub thiab txias thaum lub sij hawm kev loj hlob ntawmsilicon carbide siv lead uayog siab heev thiab tsis tuaj yeem saib xyuas. Yog li ntawd, lub ntsiab nyuaj nyob rau hauv tus txheej txheem nws tus kheej. Cov teeb meem tseem ceeb yog raws li nram no:
(1) Tsis yooj yim hauv thermal teb tswj:
Kev saib xyuas ntawm qhov kaw qhov kub kub yog qhov nyuaj thiab tswj tsis tau. Sib txawv ntawm cov tshuaj silicon-raws li cov khoom siv ncaj qha rub siv lead ua kev loj hlob nrog cov qib siab ntawm automation thiab soj ntsuam thiab tswj tau siv lead ua txoj kev loj hlob, silicon carbide crystals loj hlob nyob rau hauv qhov chaw kaw hauv qhov chaw kub siab tshaj 2,000 ℃, thiab kev loj hlob kub. yuav tsum tau tswj kom meej meej thaum lub sij hawm tsim khoom, uas ua rau kev tswj kub tsis yooj yim;
(2) Tsis yooj yim hauv crystal daim ntawv tswj:
Micropipes, polymorphic inclusions, dislocations thiab lwm yam tsis xws luag yog nquag tshwm sim thaum lub sij hawm txoj kev loj hlob, thiab lawv cuam tshuam thiab evolve ib leeg. Micropipes (MP) yog los ntawm hom tsis xws luag nrog ib tug loj ntawm ob peb microns mus rau kaum ntawm microns, uas yog killer defects ntawm pab kiag li lawm. Silicon carbide ib leeg muaj xws li ntau tshaj 200 cov ntaub ntawv siv lead ua sib txawv, tab sis tsuas yog ob peb cov qauv siv lead ua (4H hom) yog cov khoom siv semiconductor xav tau rau kev tsim khoom. Crystal form transformation yog ib qho yooj yim tshwm sim thaum lub sij hawm txoj kev loj hlob, ua rau polymorphic inclusion defects. Yog li ntawd, nws yog ib qho tsim nyog yuav tsum tswj xyuas qhov tsis zoo xws li silicon-carbon piv, kev loj hlob kub gradient, siv lead ua kev loj hlob tus nqi, thiab huab cua txaus siab. Tsis tas li ntawd, muaj qhov kub thiab txias nyob rau hauv thermal teb ntawm silicon carbide ib leeg siv lead ua kev loj hlob, uas ua rau ib txwm muaj kev ntxhov siab nyob rau hauv thiab qhov tshwm sim dislocations (basal dav hlau dislocation BPD, ntsia hlau dislocation TSD, ntug dislocation TED) thaum lub sij hawm siv lead ua kev loj hlob, yog li. cuam tshuam rau qhov zoo thiab kev ua tau zoo ntawm cov epitaxy tom qab thiab cov khoom siv.
(3) Tsis yooj yim doping tswj:
Kev taw qhia ntawm cov impurities sab nraud yuav tsum nruj me ntsis tswj kom tau txais cov khoom siv lead ua siv lead ua nrog cov kev taw qhia doping;
(4) Kev loj hlob qeeb:
Kev loj hlob ntawm silicon carbide yog qeeb heev. Cov khoom siv silicon tsoos tsuas yog xav tau 3 hnub kom loj hlob mus rau hauv cov pas nrig siv lead ua, thaum silicon carbide siv lead ua rods xav tau 7 hnub. Qhov no ua rau ib txwm ua haujlwm qis dua ntawm silicon carbide thiab tso zis tsawg heev.
Ntawm qhov tod tes, qhov tsis sib xws ntawm silicon carbide epitaxial kev loj hlob yog qhov xav tau heev, nrog rau cov huab cua nruj ntawm cov khoom siv, kev ruaj ntseg ntawm cov roj siab hauv cov tshuaj tiv thaiv chamber, kev tswj xyuas meej ntawm lub sijhawm qhia roj, qhov tseeb ntawm cov roj. ratio, thiab kev tswj nruj ntawm cov deposition kub. Tshwj xeeb, nrog rau kev txhim kho ntawm cov cuab yeej hluav taws xob tiv thaiv qib, qhov nyuaj ntawm kev tswj cov ntsiab lus tsis zoo ntawm epitaxial wafer tau nce ntau. Tsis tas li ntawd, nrog rau qhov nce ntawm cov thickness ntawm cov epitaxial txheej, yuav ua li cas los tswj lub uniformity ntawm lub resistivity thiab txo cov defect ceev thaum ua kom cov thickness tau dhau los ua lwm yam kev sib tw loj. Nyob rau hauv lub electrified tswj system, nws yog tsim nyog los integrate high-precision sensors thiab actuators los xyuas kom meej tias ntau yam tsis muaj peev xwm ua kom raug thiab ruaj khov. Nyob rau tib lub sijhawm, kev ua kom zoo ntawm kev tswj algorithm kuj tseem ceeb heev. Nws yuav tsum muaj peev xwm kho cov tswv yim tswj hauv lub sijhawm tiag tiag raws li cov lus qhia tawm tswv yim kom hloov mus rau ntau yam kev hloov pauv hauv silicon carbide epitaxial txoj kev loj hlob.
Cov teeb meem tseem ceeb hauvsilicon carbide substratekev tsim khoom:
Post lub sij hawm: Jun-07-2024