Kev tsim ntawm silicon dioxide nyob rau saum npoo ntawm silicon yog hu ua oxidation, thiab cov creation ntawm ruaj khov thiab muaj zog adherent silicon dioxide coj mus rau lub hnub yug ntawm silicon integrated circuit planar technology. Txawm hais tias muaj ntau txoj hauv kev loj hlob silicon dioxide ncaj qha rau ntawm qhov chaw ntawm silicon, nws feem ntau yog ua los ntawm thermal oxidation, uas yog ua kom cov silicon mus rau qhov kub thiab txias oxidizing ib puag ncig (oxygen, dej). Thermal oxidation txoj kev tuaj yeem tswj cov yeeb yaj kiab tuab thiab silicon / silicon dioxide interface yam ntxwv thaum lub sij hawm npaj cov yeeb yaj kiab silicon dioxide. Lwm cov tswv yim rau kev loj hlob silicon dioxide yog plasma anodization thiab ntub dej anodization, tab sis tsis muaj ob txoj kev no tau siv dav hauv VLSI cov txheej txheem.
Silicon qhia tau hais tias muaj kev nyiam ua kom ruaj khov silicon dioxide. Yog tias cov silicon freshly cleaved raug rau qhov chaw oxidizing (xws li oxygen, dej), nws yuav tsim ib txheej oxide nyias (<20Å) txawm nyob rau hauv chav tsev kub. Thaum silicon raug rau ib puag ncig oxidizing ntawm qhov kub thiab txias, txheej txheej oxide tuab yuav raug tsim los ntawm tus nqi nrawm dua. Lub hauv paus mechanism ntawm silicon dioxide tsim los ntawm silicon yog to taub zoo. Deal thiab Grove tau tsim cov qauv lej uas qhia meej txog kev loj hlob ntawm oxide zaj duab xis tuab dua 300Å. Lawv tau hais tias oxidation yog ua raws li hauv qab no, uas yog, oxidant (dej molecules thiab oxygen molecules) diffuses los ntawm cov oxide txheej uas twb muaj lawm mus rau Si/SiO2 interface, qhov twg cov oxidant reacts nrog silicon los tsim silicon dioxide. Cov tshuaj tiv thaiv tseem ceeb rau daim ntawv silicon dioxide yog piav raws li hauv qab no:
Cov tshuaj tiv thaiv oxidation tshwm sim ntawm Si / SiO2 interface, yog li thaum cov oxide txheej loj hlob, silicon tau noj tsis tu ncua thiab lub interface maj mam invades silicon. Raws li qhov sib thooj thiab qhov hnyav molecular ntawm silicon thiab silicon dioxide, nws tuaj yeem pom tias silicon noj rau lub thickness ntawm cov oxide txheej kawg yog 44%. Ua li no, yog tias cov oxide txheej loj hlob 10,000Å, 4400Å ntawm silicon yuav raug siv. Qhov kev sib raug zoo no yog ib qho tseem ceeb rau kev xam qhov siab ntawm cov kauj ruam tsim ntawm lubsilicon wafer. Cov kauj ruam yog qhov tshwm sim ntawm qhov sib txawv oxidation ntawm ntau qhov chaw ntawm silicon wafer nto.
Peb kuj muab high-purity graphite thiab silicon carbide khoom, uas dav siv nyob rau hauv wafer ua xws li oxidation, diffusion, thiab annealing.
Txais tos txhua tus neeg muas zaub los ntawm thoob plaws lub ntiaj teb tuaj xyuas peb rau kev sib tham ntxiv!
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Post lub sij hawm: Nov-13-2024