Silicon carbide crystal kev loj hlob txheej txheem thiab cov cuab yeej siv tshuab

1. SiC siv lead ua kev loj hlob technology txoj kev

PVT (sublimation method),

HTCVD (siab kub CVD),

LPE(Liquid Phase method)

muaj peb yamSiC siv lead uatxoj kev loj hlob;

Txoj kev pom zoo tshaj plaws hauv kev lag luam yog PVT txoj kev, thiab ntau dua 95% ntawm SiC ib leeg muaju yog zus los ntawm PVT txoj kev;

IndustrializedSiC siv lead uaKev loj hlob rauv siv txoj kev lag luam tseem ceeb PVT thev naus laus zis.

2. SiC crystal kev loj hlob txheej txheem

Powder synthesis- noob siv lead ua kho-crystal loj hlob-ingot annealing-waferua.

3. PVT txoj kev loj hlobSiC siv lead ua

SiC raw khoom yog muab tso rau hauv qab ntawm graphite crucible, thiab SiC noob siv lead ua yog nyob rau sab saum toj ntawm graphite crucible. Los ntawm kev kho cov rwb thaiv tsev, qhov kub ntawm SiC raw khoom yog siab dua thiab qhov kub ntawm cov noob siv lead ua qis dua. SiC raw khoom ntawm kub sublimates thiab decomposes rau hauv cov roj theem cov khoom, uas yog thauj mus rau cov noob siv lead ua nrog kub kub thiab crystallize mus rau hauv lub siC crystals. Cov txheej txheem kev loj hlob yooj yim suav nrog peb txheej txheem: decomposition thiab sublimation ntawm raw cov ntaub ntawv, hloov loj, thiab crystallization ntawm cov noob muaju.

Decomposition thiab sublimation ntawm raw khoom:

SiC(S) = Si(g)+C(S)

2 SiC(S) = Si(g)+ SiC2(g)

2 SiC(S) = C(S) + SiC2(g)

Thaum lub sij hawm hloov loj, Si vapor ntxiv reacts nrog graphite crucible phab ntsa los ua SiC2 thiab Si2C:

Si(g)+2C(S) = SiC2(g)

2 Si(g) + C(S) = Si2C(g)

Nyob rau saum npoo ntawm cov noob siv lead ua, peb theem roj loj hlob los ntawm ob cov qauv hauv qab no los tsim cov khoom siv silicon carbide:

SiC2_(g)+ Si2C_(g)= 3 TSI_(s)

Si_(g)+SiC2_(g)= 2 SiC_(S)

4. PVT txoj kev loj hlob SiC siv lead ua kev loj hlob cov cuab yeej siv tshuab txoj kev

Tam sim no, induction cua sov yog ib qho kev siv tshuab rau PVT txoj kev SiC siv lead ua kev loj hlob rauv taws;

Coil sab nraud induction cua sov thiab graphite kuj cua sov yog txoj kev loj hlob kev taw qhia ntawmSiC siv lead uakev loj hlob rauv.

5. 8-nti SiC induction cua sov loj hlob rauv

(1) Cua sovgraphite crucible cua sov ntsiablos ntawm magnetic teb induction; tswj qhov kub thiab txias los ntawm kev kho cov cua sov lub zog, coil txoj hauj lwm, thiab rwb thaiv tsev qauv;

(2) Cua sov lub graphite crucible los ntawm graphite kuj cua sov thiab thermal hluav taws xob conduction; tswj qhov kub thiab txias los ntawm kev kho qhov tam sim no ntawm graphite rhaub, cov qauv ntawm lub rhaub, thiab cheeb tsam tam sim no tswj;