SiC txheej tuaj yeem npaj los ntawm cov tshuaj vapor deposition (CVD), precursor transformation, plasma spraying, thiab lwm yam. Cov txheej npaj los ntawm CHEMICAL vapor deposition yog uniform thiab compact, thiab muaj zoo designability. Kev siv methyl trichlosilane. (CHzSiCl3, MTS) ua silicon qhov chaw, SiC txheej npaj los ntawm CVD txoj kev yog ib txoj kev paub tab rau daim ntawv thov txheej no.
SiC txheej thiab graphite muaj cov tshuaj zoo sib xws, qhov sib txawv ntawm thermal expansion coefficient ntawm lawv yog me me, siv SiC txheej tuaj yeem txhim kho qhov hnav tsis kam thiab oxidation tsis kam ntawm graphite khoom. Ntawm lawv, stoichiometric piv, qhov kub thiab txias, dilution gas, impurity gas thiab lwm yam mob muaj txiaj ntsig zoo rau cov tshuaj tiv thaiv.
Post lub sij hawm: Sep-14-2022