Taw qhia rau peb hom CVD technologies

Tshuaj vapor deposition(CVD)yog cov cuab yeej siv ntau tshaj plaws hauv kev lag luam semiconductor rau kev tso cov khoom siv ntau yam, suav nrog ntau yam khoom siv insulating, feem ntau cov ntaub ntawv hlau thiab cov ntaub ntawv hlau alloy.

CVD yog ib qho kev npaj ua yeeb yaj kiab ib txwm muaj. Nws lub hauv paus ntsiab lus yog siv gaseous precursors rau decompose tej yam Cheebtsam nyob rau hauv lub precursor los ntawm tshuaj lom neeg cov tshuaj tiv thaiv ntawm atoms thiab molecules, thiab ces tsim ib tug nyias zaj duab xis ntawm lub substrate. Cov yam ntxwv tseem ceeb ntawm CVD yog: kev hloov tshuaj lom neeg (tshuaj tshuaj lom neeg lossis thermal decomposition); tag nrho cov ntaub ntawv nyob rau hauv zaj duab xis yog los ntawm lwm qhov chaw; reactants yuav tsum koom nrog cov tshuaj tiv thaiv nyob rau hauv daim ntawv ntawm cov roj theem.

Tsawg siab chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (PECVD) thiab high density plasma chemical vapor deposition (HDP-CVD) yog peb hom CVD technologies, uas muaj qhov sib txawv ntawm cov khoom siv deposition, cov khoom siv, cov txheej txheem, thiab lwm yam. . Cov hauv qab no yog ib qho yooj yim piav qhia thiab kev sib piv ntawm peb technologies.

 

1. LPCVD (Low Pressure CVD)

Lub hauv paus ntsiab lus: Cov txheej txheem CVD nyob rau hauv cov xwm txheej tsis tshua muaj siab. Nws lub hauv paus ntsiab lus yog txhaj cov tshuaj tiv thaiv roj rau hauv cov tshuaj tiv thaiv chamber nyob rau hauv lub tshuab nqus tsev los yog tsis tshua muaj siab ib puag ncig, decompose los yog react cov roj los ntawm qhov kub thiab txias, thiab tsim ib tug khoom zaj duab xis tso rau ntawm lub substrate nto. Txij li thaum tsis tshua muaj siab txo cov roj sib tsoo thiab turbulence, lub uniformity thiab zoo ntawm cov zaj duab xis yog txhim kho. LPCVD yog dav siv nyob rau hauv silicon dioxide (LTO TEOS), silicon nitride (Si3N4), polysilicon (POLY), phosphosilicate iav (BSG), borophosphosilicate iav (BPSG), doped polysilicon, graphene, carbon nanotubes thiab lwm yam films.

CVD technologies (1)

 

Nta:


▪ Cov txheej txheem kub: feem ntau ntawm 500 ~ 900 ° C, cov txheej txheem kub yog siab heev;
▪ Gas siab ntau yam: tsis tshua muaj siab ib puag ncig ntawm 0.1 ~ 10 Torr;
▪ Zaj duab xis zoo: zoo, zoo ib yam, zoo ntom, thiab ob peb yam tsis xws luag;
▪ Deposition rate: qeeb deposition rate;
▪ Uniformity: haum rau loj-loj substrates, uniform deposition;

Qhov zoo thiab qhov tsis zoo:


▪ Muaj peev xwm tso cov yeeb yaj kiab zoo sib xws thiab ntom ntom;
▪ Ua tau zoo ntawm cov substrates loj, haum rau ntau lawm;
▪ Tus nqi qis;
▪ Qhov kub thiab txias, tsis haum rau cov ntaub ntawv kub-rhiab;
▪ Deposition tus nqi qeeb thiab cov zis kuj tsawg.

 

2. PECVD (Plasma Enhanced CVD)

Lub hauv paus ntsiab lus: Siv cov plasma los qhib cov roj theem ntawm qhov kub thiab txias, ionize thiab decompose cov molecules hauv cov tshuaj tiv thaiv roj, thiab tom qab ntawd tso cov yeeb yaj kiab nyias rau ntawm qhov chaw substrate. Lub zog ntawm plasma tuaj yeem txo qhov kub ntawm qhov xav tau rau cov tshuaj tiv thaiv, thiab muaj ntau yam kev siv. Ntau cov yeeb yaj kiab hlau, cov yeeb yaj kiab inorganic thiab cov yeeb yaj kiab organic tuaj yeem npaj tau.

CVD technologies (3)

 

Nta:


▪ Cov txheej txheem kub: feem ntau ntawm 200 ~ 400 ° C, qhov kub thiab txias yog qhov qis;
▪ Gas siab ntau: feem ntau pua pua ntawm mTorr mus rau ob peb Torr;
▪ Zaj duab xis zoo: Txawm hais tias cov yeeb yaj kiab zoo sib xws yog qhov zoo, qhov ntom thiab qhov zoo ntawm cov yeeb yaj kiab tsis zoo li LPCVD vim muaj qhov tsis xws luag uas yuav raug qhia los ntawm plasma;
▪ Deposition npaum li cas: tus nqi siab, ntau lawm efficiency;
▪ Uniformity: me ntsis qis dua LPCVD ntawm cov substrates loj;

 

Qhov zoo thiab qhov tsis zoo:


▪ Cov yeeb yaj kiab nyias tuaj yeem tso rau ntawm qhov kub thiab txias, haum rau cov khoom siv cua sov;
▪ Kev xa tawm ceev ceev, tsim nyog rau kev tsim khoom;
▪ Cov txheej txheem hloov tau yooj yim, cov khoom ua yeeb yaj kiab tuaj yeem tswj tau los ntawm kev kho cov tshuaj plasma;
▪ Plasma tej zaum yuav qhia txog qhov tsis xws luag xws li cov pinholes lossis tsis sib xws;
▪ Piv nrog LPCVD, cov yeeb yaj kiab ceev thiab qhov zoo yog me ntsis phem dua.

3. HDP-CVD (High Density Plasma CVD)

Txoj Cai: Ib qho tshwj xeeb PECVD thev naus laus zis. HDP-CVD (tseem hu ua ICP-CVD) tuaj yeem tsim cov ntshav plasma ntau dua thiab zoo dua li cov khoom siv PECVD ib txwm nyob ntawm qhov kub thiab txias. Tsis tas li ntawd, HDP-CVD muab yuav luag ywj pheej ion flux thiab lub zog tswj, txhim kho trench los yog lub qhov filling muaj peev xwm rau xav tau zaj duab xis deposition, xws li anti-reflective coatings, tsawg dielectric tsis tu ncua cov ntaub ntawv deposition, thiab lwm yam.

CVD technologies (2)

 

Nta:


▪ Txheej txheem kub: chav tsev kub txog 300 ℃, txheej txheem kub yog tsawg heev;
▪ Roj siab ntau: nruab nrab ntawm 1 thiab 100 mTorr, qis dua PECVD;
▪ Zaj duab xis zoo: siab plasma ntom, zoo zaj duab xis zoo, zoo uniformity;
▪ Tus nqi tso nyiaj: tus nqi tso nyiaj nyob nruab nrab ntawm LPCVD thiab PECVD, me ntsis siab dua LPCVD;
▪ Uniformity: vim muaj cov ntshav plasma siab, zaj duab xis uniformity yog zoo heev, haum rau complex-shaped substrate nto;

 

Qhov zoo thiab qhov tsis zoo:


▪ Muaj peev xwm tso cov yeeb yaj kiab zoo ntawm qhov kub thiab txias, haum rau cov ntaub ntawv kub-rhiab heev;
▪ Zoo heev zaj duab xis uniformity, ntom thiab nto smoothness;
▪ Cov ntshav plasma ntau dua tuaj yeem txhim kho cov khoom tso tawm sib xws thiab cov yeeb yaj kiab;
▪ Cov khoom siv nyuaj thiab tus nqi siab dua;
▪ Kev xa tawm ceev qeeb, thiab lub zog plasma ntau dua tuaj yeem ua rau muaj kev puas tsuaj me me.

 

Txais tos txhua tus neeg muas zaub los ntawm thoob plaws lub ntiaj teb tuaj xyuas peb rau kev sib tham ntxiv!

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Post lub sij hawm: Dec-03-2024
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