SiC ib leeg siv lead ua yog ib pawg IV-IV cov khoom siv semiconductor uas muaj ob lub ntsiab lus, Si thiab C, hauv qhov sib piv ntawm stoichiometric ntawm 1: 1. Nws hardness yog thib ob tsuas yog pob zeb diamond.
Kev txo cov pa roj carbon monoxide ntawm silicon oxide txoj kev los npaj SiC feem ntau yog raws li cov qauv tshuaj tiv thaiv hauv qab no:
Cov txheej txheem tshuaj tiv thaiv ntawm carbon txo ntawm silicon oxide yog qhov nyuaj, uas cov tshuaj tiv thaiv kub ncaj qha cuam tshuam rau cov khoom kawg.
Hauv kev npaj cov txheej txheem ntawm silicon carbide, cov ntaub ntawv raw yog thawj zaug tso rau hauv lub qhov cub ua haujlwm. Lub qhov cub hluav taws xob muaj cov phab ntsa kawg ntawm ob qho kawg, nrog lub graphite electrode nyob rau hauv qhov chaw, thiab lub cub tawg txuas ob lub electrodes. Nyob rau ntawm lub periphery ntawm lub cub tawg, cov ntaub ntawv raw uas koom nrog cov tshuaj tiv thaiv yog thawj zaug, thiab tom qab ntawd cov ntaub ntawv uas siv los tiv thaiv tshav kub yog muab tso rau ntawm qhov chaw. Thaum smelting pib, qhov hluav taws xob tiv thaiv yog lub zog thiab kub nce mus rau 2,600 txog 2,700 degrees Celsius. Cov hluav taws xob hluav taws xob hluav taws xob tau xa mus rau tus nqi los ntawm qhov chaw ntawm lub cub tawg, ua rau nws maj mam rhuab. Thaum qhov kub ntawm tus nqi siab tshaj 1450 degrees Celsius, cov tshuaj tiv thaiv tshwm sim los tsim silicon carbide thiab carbon monoxide gas. Raws li cov txheej txheem smelting txuas ntxiv, qhov chaw kub kub hauv cov nqi yuav maj mam nthuav, thiab cov nyiaj ntawm silicon carbide generated kuj yuav nce. Silicon carbide tsis tu ncua tsim nyob rau hauv lub cub tawg, thiab los ntawm evaporation thiab txav mus, cov crystals maj mam loj hlob thiab nws thiaj li sib sau ua ke rau hauv cylindrical crystals.
Ib feem ntawm cov phab ntsa sab hauv ntawm cov siv lead ua pib decompose vim qhov kub siab tshaj 2,600 degrees Celsius. Cov khoom silicon uas tsim los ntawm decomposition yuav recombine nrog cov pa roj carbon nyob rau hauv tus nqi tsim tshiab silicon carbide.
Thaum cov tshuaj tiv thaiv ntawm silicon carbide (SiC) tiav thiab lub cub tawg tau txias, cov kauj ruam tom ntej tuaj yeem pib. Ua ntej, cov phab ntsa ntawm lub cub tawg yog dismantled, thiab tom qab ntawd cov ntaub ntawv raw nyob rau hauv lub cub tawg yog xaiv thiab graded txheej los ntawm txheej. Cov khoom siv raw uas tau xaiv yog crushed kom tau txais cov khoom siv granular peb xav tau. Tom ntej no, impurities nyob rau hauv raw cov ntaub ntawv raug tshem tawm los ntawm dej ntxuav los yog ntxuav nrog acid thiab alkali daws, nrog rau sib nqus sib nqus thiab lwm txoj kev. Cov ntaub ntawv huv huv yuav tsum tau qhuav thiab rov kuaj dua, thiab thaum kawg cov hmoov ntshiab silicon carbide tuaj yeem tau. Yog tias tsim nyog, cov hmoov no tuaj yeem ua tiav raws li kev siv tiag tiag, xws li shaping lossis zoo sib tsoo, los tsim cov hmoov zoo silicon carbide.
Cov kauj ruam tshwj xeeb yog raws li hauv qab no:
(1) Cov khoom siv raw
Ntsuab silicon carbide micro hmoov yog tsim los ntawm crushing coarser ntsuab silicon carbide. Cov tshuaj lom neeg muaj pes tsawg leeg ntawm silicon carbide yuav tsum ntau dua 99%, thiab cov pa roj carbon monoxide dawb yuav tsum tsawg dua 0.2%.
(2) tawg
Txhawm rau txhuam silicon carbide xuab zeb rau hauv cov hmoov zoo, ob txoj hauv kev tam sim no tau siv hauv Suav teb, ib qho yog cov pob zeb ntub dej sib sib zog nqus crushing, thiab lwm yam yog crushing siv lub tshuab ziab khaub ncaws.
(3) Sib nqus sib cais
Tsis muaj teeb meem dab tsi yog siv los txhuam silicon carbide hmoov rau hauv cov hmoov zoo, ntub sib nqus sib nqus thiab cov tshuab sib nqus sib nqus feem ntau yog siv. Qhov no yog vim tias tsis muaj plua plav thaum ntub sib nqus sib nqus, cov khoom sib nqus tau sib cais tag nrho, cov khoom tom qab sib nqus sib nqus muaj cov hlau tsawg, thiab cov hmoov silicon carbide tshem tawm los ntawm cov khoom sib nqus kuj tsawg dua.
(4) Kev sib cais dej
Lub hauv paus ntsiab lus ntawm txoj kev sib cais dej yog siv qhov sib txawv ntawm qhov sib txawv ntawm qhov sib txawv ntawm silicon carbide hais ntawm cov kab sib txawv hauv dej los ua qhov loj me me.
(5) Ultrasonic kuaj
Nrog rau txoj kev loj hlob ntawm ultrasonic technology, nws kuj tau lug siv nyob rau hauv kev tshuaj ntsuam ultrasonic ntawm micro-hmoov tshuab, uas muaj peev xwm pib daws teeb meem tshuaj ntsuam xws li muaj zog adsorption, yooj yim agglomeration, siab static hluav taws xob, siab fineness, siab ceev, thiab lub teeb tshwj xeeb gravity. .
(6) Kev soj ntsuam zoo
Kev soj ntsuam zoo ntawm micropowder muaj xws li tshuaj muaj pes tsawg leeg, particle loj muaj pes tsawg leeg thiab lwm yam khoom. Rau txoj kev tshuaj xyuas thiab cov qauv zoo, thov xa mus rau "Silicon Carbide Technical Conditions."
(7) Sib tsoo hmoov av ntau lawm
Tom qab cov hmoov micro tau muab faib ua pawg thiab tshuaj xyuas, cov khoom siv lub taub hau tuaj yeem siv los npaj cov hmoov sib tsoo. Kev tsim cov hmoov sib tsoo tuaj yeem txo cov khoom pov tseg thiab txuas ntxiv cov khoom lag luam.
Post lub sij hawm: May-13-2024