Breakthrough sic kev loj hlob tseem ceeb cov ntaub ntawv tseem ceeb

Thaum silicon carbide siv lead ua loj hlob, "ib puag ncig" ntawm kev loj hlob cuam tshuam ntawm axial centre ntawm cov siv lead ua thiab ntug sib txawv, yog li ntawd cov siv lead ua kev nyuaj siab ntawm ntug nce, thiab cov siv lead ua ntug yog ib qho yooj yim los tsim "kev puas tsuaj" vim mus rau qhov cuam tshuam ntawm graphite nres nplhaib "carbon", yuav ua li cas los daws qhov teeb meem ntawm ntug lossis nce qhov chaw zoo ntawm qhov chaw (ntau dua 95%) yog lub ntsiab lus tseem ceeb.

Raws li macro defects xws li "microtubules" thiab "inclusions" yog maj mam tswj los ntawm kev lag luam, nyuaj silicon carbide crystals kom "loj sai, ntev thiab tuab, thiab loj hlob tuaj", ntug "txoj kev tsis xws luag" yog txawv txav, thiab nrog rau cov nce nyob rau hauv txoj kab uas hla thiab thickness ntawm silicon carbide crystals, lub ntug "tag nrho cov tsis xws luag" yuav muab multiplied los ntawm txoj kab uas hla square thiab thickness.

Kev siv tantalum carbide TaC txheej yog los daws qhov teeb meem ntawm ntug thiab txhim kho qhov zoo ntawm kev loj hlob siv lead ua, uas yog ib qho ntawm cov kev qhia tseem ceeb ntawm "loj hlob sai, loj hlob thiab loj hlob tuaj".Txhawm rau txhawb txoj kev loj hlob ntawm kev lag luam thev naus laus zis thiab daws qhov "ntshuam" kev vam khom ntawm cov ntaub ntawv tseem ceeb, Hengpu tau tawg los daws cov tantalum carbide txheej tshuab (CVD) thiab mus txog qib siab thoob ntiaj teb.

 Tantalum carbide (TaC) txheej (2) (1)

Tantalum carbide TaC txheej, los ntawm qhov kev xav ntawm realization tsis yooj yim, nrog sintering, CVD thiab lwm txoj kev yog yooj yim mus cuag.sintering txoj kev, siv tantalum carbide hmoov los yog precursor, ntxiv active cov khoom xyaw (feem ntau hlau) thiab bonding agent (feem ntau ntev saw polymer), coated rau saum npoo ntawm graphite substrate sintered ntawm kub.Los ntawm CVD txoj kev, TaCl5 + H2 + CH4 tau tso rau saum npoo ntawm graphite matrix ntawm 900-1500 ℃.

Txawm li cas los xij, cov txheej txheem yooj yim xws li siv lead ua kev taw qhia ntawm tantalum carbide deposition, uniform film thickness, kev ntxhov siab tso tawm ntawm txheej thiab graphite matrix, nto tawg, thiab lwm yam, yog qhov nyuaj heev.Tshwj xeeb tshaj yog nyob rau hauv lub sic siv lead ua kev loj hlob ib puag ncig, ib tug ruaj khov kev pab cuam lub neej yog lub ntsiab parameter, yog qhov nyuaj tshaj plaws.


Post lub sij hawm: Lub Xya hli ntuj-21-2023
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