MOCVD Substrate rhaub, Cov Cuab Yeej Cuab Yeej Rau MOCVD

MOCVD Substrate rhaub, Cov Cuab Yeej Cuab Yeej Rau MOCVD,
graphite rhaub, Graphite Semiconductor, lub tshuab cua sov, MOCVD Substrate rhaub,

MOCVD Substrate rhaub, Cov Cuab Yeej Cuab Yeej Rau MOCVD

Graphitelub tshuab cua sov:
Covgraphite rhaubCheebtsam yog siv nyob rau hauv lub kub kub rauv nrog kub mus txog 2200 degree ntawm lub tshuab nqus tsev ib puag ncig thiab 3000 degree nyob rau hauv lub deoxidized thiab tso pa ib puag ncig.
Main nta ntawmgraphite rhaub:
1. uniformity ntawm cua sov qauv.
2. zoo hluav taws xob conductivity thiab siab hluav taws xob load.
3. corrosion kuj.
4. inoxidizability.
5. muaj tshuaj purity siab.
6. siab mechanical zog.
Qhov kom zoo dua yog lub zog txuag, tus nqi siab thiab kev saib xyuas qis.
Peb tuaj yeem tsim los tiv thaiv oxidation thiab lub neej ntev ntev graphite crucible, graphite pwm thiab txhua qhov chaw ntawm graphite rhaub.
Main parameter ntawm graphite rhaub:

Graphite rhaub rau hluav taws xob rauv hluav taws xob muaj cov khoom siv hluav taws xob tiv thaiv, oxidation tsis kam, hluav taws xob zoo thiab kev siv tshuab zoo dua. Peb tuaj yeem tshuab ntau hom graphite rhaub raws li cov neeg siv khoom tsim.