ICP Etch Carrier

Lus piav qhia luv luv:

Qhov Chaw Keeb Kwm:Tuam Tshoj

Crystal Structure:FCCβ theem

Ceev:3.21 g / cm3;

Hardness:2500 Vickers;

Grain Loj:2 ~ 10m;

Tshuaj Purity:99.99995%;

Thaum tshav kub kub muaj peev xwm:640J·kg-1·K-1;

Sublimation kub:2700 ℃;

Felexural zog:415 Mpa (RT 4-Point);

Young's Modulus:430 Gpa (4pt khoov, 1300 ℃);

Thermal Expansion (CTE):4.5 10-6K-1;

Thermal conductivity:300 (W / MK);

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Product Detail

Khoom cim npe

Product Description

Peb lub tuam txhab muab SiC txheej txheej txheem kev pab cuam los ntawm CVD txoj kev nyob rau saum npoo ntawm graphite, ceramics thiab lwm yam ntaub ntawv, kom tshwj xeeb gases uas muaj carbon thiab silicon react ntawm kub kom tau siab purity SiC molecules, molecules tso rau saum npoo ntawm cov ntaub ntawv coated, tsim SIC tiv thaiv txheej.

Cov yam ntxwv tseem ceeb:

1. Kub oxidation kuj:

oxidation kuj tseem zoo heev thaum kub siab li 1600 C.

2. High purity: ua los ntawm cov tshuaj vapor deposition nyob rau hauv siab kub chlorination mob.

3. Erosion kuj: siab hardness, compact nto, zoo hais.

4. Corrosion kuj: acid, alkali, ntsev thiab organic reagents.

Main Specifications ntawm CVD-SIC txheej

SiC-CVD Properties
Crystal Structure	FCC β theem
Qhov ntom	g / cm³	3.21
Hardness	Vickers hardness	2500
Loj Loj	ib m	2 ~ 10
Tshuaj Purity	%	99.999 5
Thaum tshav kub kub muaj peev xwm	J·kg-1 · K-1	640
Sublimation kub	℃	2700 ib
Felexural zog	MPa (RT 4-point)	415
Young's Modulus	Gpa (4pt khoov, 1300 ℃)	430
Thermal Expansion (CTE)	10-6K-1	4.5
Thermal conductivity	(W / mK)	300