gallium arsenide-phosphide epitaxial

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Gallium arsenide-phosphide epitaxial cov qauv, zoo ib yam li cov qauv tsim ntawm substrate ASP hom (ET0.032.512TU), rau cov. tsim ntawm planar liab LED siv lead ua.

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Gallium arsenide-phosphide epitaxial cov qauv, zoo ib yam li cov qauv tsim ntawm substrate ASP hom (ET0.032.512TU), rau cov. tsim ntawm planar liab LED siv lead ua.

Basic technical parameter
rau gallium arsenide-phosphide cov qauv

1, SubstrateGaAs
a. Hom conductivity	hluav taws xob
b. Kev tiv thaiv, ohm-cm	0,008 ib
c. Crystal-latticeorientation	(100)
d. Deg misorientation	(1–3)°

2. Epitaxial txheej GaAs1-х Pх
a. Hom conductivity	hluav taws xob
b. Phosphorus cov ntsiab lus nyob rau hauv cov txheej txheem hloov	los ntawm х = 0 rau х ≈ 0,4
c. Phosphorus cov ntsiab lus nyob rau hauv ib txheej ntawm qhov muaj pes tsawg leeg	х 0,4
d. Carrier concentration, сm3	(0,2–3,0) · 1017
e. Wavelength ntawm qhov siab tshaj plaws ntawm photoluminescence spectrum, nm	645-673 nm
f. Wavelength ntawm qhov siab tshaj plaws ntawm electroluminescence spectrum	650-675 nm
g. Tsis tu ncua txheej thickness, micron	yam 8nm
h. Layerthickness (tag nrho), micron	Tsawg kawg yog 30 nm

3 Phaj nrog epitaxial txheej
a. Deflection, micron	Feem ntau 100 um
b. Thickness, micron	360-600 hli
c. Ib square centimeter	Yam tsawg kawg yog 6 cm2
d. Qhov tshwj xeeb luminous siv (tom qab diffusionZn), cd / amp	Tsawg kawg yog 0.05 cd / amp