He aha ke ʻano o ka uhi ʻana?

Silicon CarbideHe hui paʻakikī i loaʻa ke silikoni a me ke kalapona, a ʻike ʻia ma ke ʻano e like me ka moissanite mineral laha loa. Hiki ke hoʻopaʻa ʻia nā ʻāpana silika carbide e ka sintering e hana i nā seramika paʻakikī loa, i hoʻohana nui ʻia i nā noi e koi ana i ka lōʻihi kiʻekiʻe, ʻoi aku hoʻi i ka procession semiconductor.

Ke kino kino o SiC

He aha ka SiC Coating?

ʻO ka uhi ʻo SiC kahi uhi carbide silika paʻa a paʻa me ka corrosion kiʻekiʻe a me ke kūpaʻa wela a me ka conductivity thermal maikaʻi loa. Hoʻohana nui ʻia kēia uhi SiC maʻemaʻe kiʻekiʻe i ka semiconductor a me nā ʻoihana uila e pale i nā mea lawe wafer, nā kumu a me nā mea wela mai nā kaiapuni corrosive a reactive. He kūpono nō hoʻi ka uhi ʻana o SiC no nā umu ahi a me ka hoʻoheheʻe ʻana i nā ʻenekini kiʻekiʻe, reactive a me ka oxygen.

Kiʻekiʻe maʻemaʻe SiC uhi ili

He aha ke kaʻina hana uhi SiC?

Hoʻokomo ʻia kahi ʻāpana lahilahi o ka silicon carbide ma ka ʻili o ka substrate e hoʻohana anaCVD (Hoʻopaʻa ʻia ʻO ka mahu kemika). Hana ʻia ka waiho ʻana ma nā mahana o 1200-1300°C a ʻo ke ʻano hoʻonui wela o ka mea substrate pono e kūpono me ka uhi SiC e hōʻemi i ke kaumaha wela.

CVD SIC FILM CRYSTAL STRUCTURE

CVD SIC Coating FILM CRYSTAL STRUCTURE

Hōʻike nui ʻia nā waiwai kino o ka coating SiC i kona kūpaʻa wela kiʻekiʻe, paʻakikī, kūpaʻa corrosion a me ka conductivity thermal.

ʻO nā ʻāpana kino maʻamau e like me kēia:

ʻoʻoleʻa: He Vickers Hardness maʻamau ka uhi SiC ma ka laulā o 2000-2500 HV, e hāʻawi ana iā lākou i ka lole kiʻekiʻe loa a me ka pale ʻana i ka hopena i nā noi ʻoihana.

ʻO ka mānoanoa: He 3.1-3.2 g/cm³ ka mānoanoa o nā uhi SiC. Hāʻawi ke kiʻekiʻe kiʻekiʻe i ka ikaika mechanical a me ka lōʻihi o ka uhi.

ʻO ke kau wela wela: He kiʻekiʻe ka wela o nā pale SiC, maʻamau i ka laulā o 120-200 W/mK (ma 20°C). Hāʻawi kēia iā ia i ka conductivity thermal maikaʻi i nā kaiapuni kiʻekiʻe a kūpono ia no nā lako lapaʻau wela i ka ʻoihana semiconductor.

Lae hehee: He wahi hehee ko silicon carbide ma kahi o 2730°C a he maikai loa ka wela ma na wela wela.

Coefficient o ka hoonui wela: Loaʻa i nā pale SiC kahi helu laina haʻahaʻa o ka hoʻonui wela (CTE), maʻamau i ka laulā o 4.0-4.5 µm/mK (ma ka 25-1000 ℃). 'O ia ho'i, 'oi aku ka maika'i o kona kūpa'a dimensional ma luna o nā 'oko'a wela nui.

ʻO ke kūpaʻa ʻino: Paʻa loa nā pale SiC i ka ʻino i loko o ka ʻakika ikaika, ka alkali a me nā kaiapuni oxidizing, ʻoi aku ka nui o ka hoʻohana ʻana i nā ʻakika ikaika (e like me HF a i ʻole HCl), ʻoi aku ko lākou pale ʻana i ka corrosion ma mua o nā mea metala maʻamau.

Hiki ke hoʻopili ʻia nā coatings SiC i nā mea aʻe:

ʻO ka graphite isostatic maʻemaʻe kiʻekiʻe (CTE haʻahaʻa)
Tungsten
Molybdenum
Silicon Carbide
Silicon Nitride
Kaona-Kapona Composite (CFC)

Hoʻohana pinepine ʻia nā huahana i uhi ʻia ʻo SiC ma nā wahi aʻe:

ʻO ka hana pākī LED
ʻO ka hana polysilicon
Semiconductorulu aniani
Silicon a meSiC epitaxy
ʻO ka hoʻomaʻamaʻa wela a me ka etching

No ke aha e koho ai i ka VET Energy?

ʻO VET Energy kahi mea hana koʻikoʻi, mea hou a me ke alakaʻi o nā huahana coating SiC ma Kina, ʻo nā huahana coating SiC koʻikoʻi.mea lawe wafer me ka uhi SiC, SiC i uhiiaepitaxial susceptor, apo graphite i uhi ʻia ʻo SiC, Nā ʻāpana hapa mahina me ka uhi SiC, ʻO SiC i uhi ʻia i ka hui kalapona kalapona, Waʻa wafer uhi ʻia ʻo SiC, ʻO ka mea hoʻomehana i uhi ʻia ʻo SiC, etc. Hoʻokumu ʻo VET Energy i ka hoʻolako ʻana i ka ʻoihana semiconductor me ka ʻenehana hope loa a me nā hoʻonā huahana, a kākoʻo i nā lawelawe hana maʻamau. Manaʻo mākou e lilo i hoa pili lōʻihi ma Kina.