ʻO nā pilikia ʻenehana i nā wafers silicon carbide kiʻekiʻe me ka hana paʻa e loaʻa:
1) No ka mea, pono e ulu nā kristal i loko o kahi kaiapuni i hoʻopaʻa ʻia ma luna o 2000 ° C, ʻoi aku ka kiʻekiʻe o nā koi hoʻomalu wela;
2) No ka mea, ʻoi aku ka nui o ka carbide silicon ma mua o 200 mau hale aniani, akā he mau hale liʻiliʻi wale nō o ka silicon carbide hoʻokahi i koi ʻia i nā mea semiconductor pono, ʻo ka silicon-to-carbon ratio, ka ulu ʻana o ka mahana wela, a me ka ulu ʻana o ka kristal e pono e mālama pono ʻia i ka wā. ke kaʻina hana ulu aniani. Nā palena e like me ka wikiwiki a me ke kahe o ka ea;
3) Ma lalo o ke ʻano o ka hoʻoili ʻana o ka vapor phase, paʻakikī loa ka ʻenehana hoʻonui anawaena o ka ulu ʻana o ke aniani carbide silicon;
4) ʻO ka paʻakikī o ka silicon carbide kahi kokoke i ka daimana, a paʻakikī nā ʻenehana ʻoki, wili, a me ka polishing.
ʻO nā wafers epitaxial SiC: hana mau ʻia e ke ʻano hoʻoheheʻe mahu (CVD). Wahi a nā ʻano doping like ʻole, ua hoʻokaʻawale ʻia lākou i n-type a me p-type epitaxial wafers. Hiki iā Hantian Tiancheng a me Dongguan Tianyu ke hāʻawi i nā wafers epitaxial 4-inihi/6-ʻīniha. No ka epitaxy SiC, paʻakikī ke hoʻomalu i ke kahua kiʻekiʻe-voltage, a ʻoi aku ka hopena o ka maikaʻi o ka epitaxy SiC i nā polokalamu SiC. Eia kekahi, hoʻohana ʻia nā mea epitaxial e nā ʻoihana alakaʻi ʻehā i ka ʻoihana: Axitron, LPE, TEL a me Nuflare.
Silicon carbide epitaxialʻO ka wafer e pili ana i kahi wafer silicon carbide kahi kiʻi aniani hoʻokahi (epitaxial layer) me kekahi mau koi a like me ka kristal substrate i ulu ʻia ma ka substrate carbide silicon kumu. Hoʻohana nui ʻia ka ulu ʻana o ka Epitaxial CVD (Chemical Vapor Deposition,) i nā lako a i ʻole MBE (Molecular Beam Epitaxy). No ka mea ua hana pololei ʻia nā mea hana silicon carbide i ka papa epitaxial, pili pono ka maikaʻi o ka papa epitaxial i ka hana a me ka hua o ka mea hana. Ke hoʻomau nei ka hoʻonui ʻana o ka volta i ka hana o ka hāmeʻa, ʻoi aku ka mānoanoa o ka papa epitaxial e pili ana a ʻoi aku ka paʻakikī o ka mana. i ka manawa o ka volta ma waena o 1200-1700V, ʻo ka mānoanoa epitaxial layer e koi ʻia a hiki i 10-15 microns. Inā piʻi ka volta ma mua o 10,000 volts, pono ke koi ʻia kahi mānoanoa epitaxial layer ma mua o 100 microns. Ke hoʻomau nei ka mānoanoa o ka papa epitaxial e hoʻonui i ka paʻakikī i ka mālama ʻana i ka mānoanoa a me ka resistivity like ʻole a me ka nui o nā hemahema.
Nā lako SiC: I ka honua, 600 ~ 1700V SiC SBD a me MOSFET ua hana ʻia. Hoʻohana ʻia nā huahana koʻikoʻi ma nā pae uila ma lalo o 1200V a hoʻohana mua i ka ʻeke TO. Ma ke ʻano o ke kumukūʻai, kūʻai ʻia nā huahana SiC ma ka mākeke honua ma kahi o 5-6 mau manawa kiʻekiʻe ma mua o ko lākou mau hoa Si. Eia naʻe, ke emi nei nā kumukūʻai ma kahi makahiki o 10%. me ka hoʻonui ʻana o nā mea upstream a me ka hana ʻana i nā mea hana i nā makahiki 2-3 e hiki mai ana, e hoʻonui ʻia ka lako mākeke, e alakaʻi ana i nā hōʻemi hou aʻe. Manaʻo ʻia ke hiki ke kumukūʻai i 2-3 mau manawa o nā huahana Si, nā pōmaikaʻi i lawe ʻia e nā kumukūʻai ʻōnaehana hoʻemi a me ka hoʻomaikaʻi ʻana i ka hana e hoʻoneʻe mālie iā SiC e noho i ka mākeke o nā polokalamu Si.
Hoʻokumu ʻia ka ʻeke kuʻuna ma luna o nā substrates i hoʻokumu ʻia i ke silika, aʻo nā mea semiconductor o nā hanauna ʻekolu e koi i kahi hoʻolālā hou loa. ʻO ka hoʻohana ʻana i nā hale hoʻopihapiha hoʻopihapiha hoʻokumu ʻia ma ka silicon no nā mea mana ākea-bandgap hiki ke hoʻolauna i nā pilikia hou a me nā pilikia e pili ana i ka pinepine, ka hoʻokele wela, a me ka hilinaʻi. ʻOi aku ka maʻalahi o nā mana mana SiC i ka capacitance parasitic a me ka inductance. Ke hoʻohālikelike ʻia me nā polokalamu Si, ʻoi aku ka wikiwiki o ka hoʻololi ʻana o ka mana SiC, hiki ke alakaʻi i ka overshoot, oscillation, hoʻonui i nā poho hoʻololi, a me nā hana hewa ʻole. Hoʻohui ʻia, hana nā mana mana SiC i nā mahana kiʻekiʻe, e koi ana i nā ʻenehana hoʻokele wela.
Ua hoʻomohala ʻia nā ʻano hana like ʻole ma ke kahua o ka wide-bandgap semiconductor power packaging. ʻAʻole kūpono ke ʻano o ka pūʻulu module mana kuʻuna Si. I mea e hoʻoponopono ai i nā pilikia o nā palena parasitic kiʻekiʻe a me ka maikaʻi o ka hoʻoheheʻe ʻana i ka wela o ka paʻa ʻana o ka mana module Si-based, ua hoʻohana ʻo SiC power module packaging i ka pilina uila a me ka ʻenehana hoʻoluʻu ʻaoʻao ʻelua i kona ʻano, a hoʻohana pū i nā mea substrate me ka wela maikaʻi. conductivity, a ho'āʻo e hoʻohui i nā capacitors decoupling, nā ʻike wela/i kēia manawa, a me nā kaʻa kaʻapuni i loko o ka hoʻolālā module, a ua hoʻomohala i nā ʻano ʻenehana hoʻopihapiha ʻokoʻa. Eia kekahi, aia nā pale ʻenehana kiʻekiʻe i ka hana ʻana o nā mea hana SiC a kiʻekiʻe nā kumukūʻai hana.
Hana ʻia nā mea hana silikoni ma ka waiho ʻana i nā papa epitaxial ma kahi substrate silicon carbide ma o CVD. ʻO ke kaʻina hana e pili ana i ka hoʻomaʻemaʻe, oxidation, photolithography, etching, stripping of photoresist, implantation ion, chemical vapor deposition of silicon nitride, polishing, sputtering, a me nā kaʻina hana ma hope e hana i ke ʻano o ka mīkini ma ka substrate crystal single SiC. ʻO nā ʻano nui o nā mana mana SiC e loaʻa iā SiC diodes, SiC transistors, a me nā modula mana SiC. Ma muli o nā kumu e like me ka wikiwiki o ka hana ʻana o nā mea i luna a me nā haʻahaʻa haʻahaʻa haʻahaʻa, ʻoi aku ka kiʻekiʻe o nā mea hana silicon carbide.
Eia kekahi, ʻo ka hana ʻana i nā mea hana silicon carbide he mau pilikia ʻenehana:
1) Pono e hoʻomohala i kahi kaʻina hana e kūlike me nā ʻano o nā mea carbide silicon. No ka laʻana: He wahi hoʻoheheʻe kiʻekiʻe ʻo SiC, ʻo ia ka mea ʻaʻole pono ka diffusion thermal kuʻuna. Pono e hoʻohana i ke ʻano doping implantation ion a me ka hoʻomalu pono ʻana i nā ʻāpana e like me ka mahana, ka wela wela, ka lōʻihi, a me ke kahe kinoea; ʻAʻole paʻa ʻo SiC i nā mea hoʻoheheʻe kemika. Pono e hoʻohana ʻia nā ʻano e like me ka etching maloʻo, a me nā mea huna, nā hui kinoea, ka hoʻomalu ʻana i ka pali ʻaoʻao, etching rate, sidewall roughness, etc.
2) ʻO ka hana ʻana i nā electrodes metala ma nā wafers silicon carbide e pono ai ke kūpaʻa pili ma lalo o 10-5Ω2. ʻO nā mea electrode e hoʻokō i nā koi, Ni a me Al, loaʻa ka maikaʻi o ka wela ma luna o 100 ° C, akā ʻoi aku ka maikaʻi o Al / Ni. ʻO ke kū'ē kū'ē kū'ē o /W/Au ka mea electrode composite he 10-3Ω2 kiʻekiʻe;
3) He kiʻekiʻe ka ʻokiʻoki ʻana o SiC, a ʻo ka paʻakikī o SiC ka lua wale nō i ka daimana, e kau ana i mua i nā koi kiʻekiʻe no ka ʻokiʻoki, wili, polishing a me nā ʻenehana ʻē aʻe.
Eia kekahi, ʻoi aku ka paʻakikī o ka hana ʻana i nā mana mana silicon carbide. Wahi a nā ʻano hana like ʻole, hiki ke hoʻokaʻawale ʻia nā mea mana silicon carbide i nā mea planar a me nā ʻauwaha. Loaʻa i nā mana mana silicon carbide planar ke kūlike ʻana o ka ʻāpana a me ke kaʻina hana maʻalahi, akā maʻalahi i ka hopena JFET a loaʻa i ka capacitance parasitic kiʻekiʻe a me ke kūpaʻa o ka mokuʻāina. Ke hoʻohālikelike ʻia me nā polokalamu planar, ʻoi aku ka liʻiliʻi o nā ʻāpana uila silicon carbide mana a loaʻa i kahi kaʻina hana paʻakikī. Eia nō naʻe, ʻoi aku ka maikaʻi o ka hoʻomohala ʻana o ka ʻauwaha i ka hoʻonui ʻana i ka nui o ka ʻāpana ʻāpana a ʻaʻole hiki ke hoʻopuka i ka hopena JFET, kahi mea e pono ai ka hoʻoponopono ʻana i ka pilikia o ka neʻe ʻana o ke kahawai. Loaʻa iā ia nā waiwai maikaʻi e like me ka liʻiliʻi ma ke kū'ē, ka capacitance parasitic liʻiliʻi, a me ka hoʻohana ʻana i ka ikehu hoʻololi haʻahaʻa. Loaʻa iā ia nā kumukūʻai nui a me nā pono hana a ua lilo ia i alakaʻi alakaʻi o ka hoʻomohala ʻana i nā mana mana silicon carbide. Wahi a ka pūnaewele mana o Rohm, ʻo ka ROHM Gen3 structure (Gen1 Trench structure) he 75% wale nō o ka wahi chip Gen2 (Plannar2), a ʻo ka ROHM Gen3 structure on-resistance ua hoʻemi ʻia e 50% ma lalo o ka nui o ka chip.
ʻO ka substrate Silicon carbide, epitaxy, front-end, nā lilo R&D a me nā mea ʻē aʻe he 47%, 23%, 19%, 6% a me 5% o ke kumukūʻai hana o nā mea hana silicon carbide.
ʻO ka hope, e kālele mākou i ka wāwahi ʻana i nā pale ʻenehana o nā substrates i ke kaulahao ʻoihana silicon carbide.
ʻO ke kaʻina hana o nā substrates silicon carbide ua like ia me nā substrates-based silicone, akā ʻoi aku ka paʻakikī.
ʻO ke kaʻina hana o ka silicon carbide substrate maʻamau e komo pū me ka synthesis maka, ka ulu ʻana o ka kristal, ka hoʻoili ʻana, ka ʻoki ʻana, ka wafer grinding, polishing, hoʻomaʻemaʻe a me nā loulou ʻē aʻe.
ʻO ke kahua ulu kristal ke kumu o ke kaʻina holoʻokoʻa, a ʻo kēia kaʻina e hoʻoholo ai i nā waiwai uila o ka substrate silicon carbide.
He mea paʻakikī ka ulu ʻana o nā mea carbide silikoni ma ka pae wai ma lalo o nā kūlana maʻamau. ʻO ke ʻano o ka ulu ʻana o ka vapor phase kaulana i ka mākeke i kēia lā he ulu ulu ma luna o 2300 ° C a koi pono i ka mana kūpono o ka ulu ulu. ʻO ke kaʻina hana holoʻokoʻa he mea paʻakikī ke nānā. ʻO kahi hapa liʻiliʻi e alakaʻi i ka ʻoki ʻana i ka huahana. I ka hoʻohālikelike, koi wale nā mea silika i 1600 ℃, ʻoi aku ka haʻahaʻa. ʻO ka hoʻomākaukau ʻana i nā substrate silicon carbide e kū pū ana i nā pilikia e like me ka ulu lohi o ke aniani a me nā koi ʻano kristal kiʻekiʻe. ʻO ka ulu ʻana o ka wafer silikoni ma kahi o 7 a 10 mau lā, ʻoiai ʻo ka huki ʻana i ke koʻokoʻo silicon he 2 a me ka hapa wale nō lā. Eia kekahi, ʻo ka silicon carbide kahi mea nona ka paʻakikī ma mua o ke daimana. E lilo ana ia i mea nui i ka wā e ʻoki ai, wili, a polishing, a ʻo 60% wale nō ka hopena.
ʻIke mākou i ke ʻano o ka hoʻonui ʻana i ka nui o nā substrates silicon carbide, ʻoiai ke hoʻomau nei ka nui o ka nui, ʻoi aku ka kiʻekiʻe o nā koi no ka ʻenehana hoʻonui diameter. Pono ia i ka hui pū ʻana o nā mea mana ʻenehana like ʻole e hoʻokō i ka ulu ʻana o nā kristal.
Ka manawa hoʻouna: Mei-22-2024