He aha nā pale ʻenehana i ka carbide silika?

Hōʻike ʻia ka hanauna mua o nā mea semiconductor e ka silicon kuʻuna (Si) a me ka germanium (Ge), ʻo ia ke kumu no ka hana kaapuni hoʻohui. Hoʻohana nui ʻia lākou i nā transistors haʻahaʻa haʻahaʻa, haʻahaʻa haʻahaʻa, a me nā mea ʻike. ʻOi aku ma mua o 90% o nā huahana semiconductor i hana ʻia me nā mea hana silika;
Hōʻike ʻia ka lua o nā mea semiconductor e gallium arsenide (GaAs), indium phosphide (InP) a me gallium phosphide (GaP). Ke hoʻohālikelikeʻia me nā mea hana silika, loaʻa iā lākou nāʻano optoelectronic kiʻekiʻe a me ka wikiwiki a hoʻohana nuiʻia ma nāʻano o ka optoelectronics a me ka microelectronics. ;
Hōʻike ʻia ke kolu o ka hanauna o nā mea semiconductor e nā mea e puka mai ana e like me ka silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), daimana (C), a me aluminium nitride (AlN).

Silicon carbidehe mea koʻikoʻi koʻikoʻi no ka hoʻomohala ʻana i ka ʻoihana semiconductor ʻekolu-hanauna. Hiki i nā mea mana Silicon carbide ke hoʻokō pono i ka pono kiʻekiʻe, miniaturization a me nā koi māmā o nā ʻōnaehana uila me ko lākou kūpaʻa kiʻekiʻe-voltage maikaʻi loa, ke kūpaʻa wela kiʻekiʻe, haʻahaʻa haʻahaʻa a me nā waiwai ʻē aʻe.

Ma muli o kāna mau waiwai kino maikaʻi: kiʻekiʻe band gap (e like me ka haʻihaʻi kiʻekiʻe kiʻekiʻe uila a me ka mana kiʻekiʻe), kiʻekiʻe uila conductivity, a kiʻekiʻe thermal conductivity, ua manaʻo ʻia e lilo ia i mea hoʻohana nui loa no ka hana ʻana i nā ʻāpana semiconductor i ka wā e hiki mai ana. . ʻOi aku ma nā kahua o nā kaʻa ikehu hou, ka hana mana photovoltaic, ka transit rail, nā grids akamai a me nā māla ʻē aʻe, loaʻa iā ia nā pōmaikaʻi.

Hoʻokaʻawale ʻia ke kaʻina hana ʻo SiC i ʻekolu mau ʻanuʻu nui: SiC single crystal growth, epitaxial layer growth and device manufacturing, e pili ana i nā loulou nui ʻehā o ke kaulahao ʻoihana:pani, epitaxy, nā mea hana a me nā modula.

ʻO ke ʻano kumu nui o ka hana ʻana i nā substrates e hoʻohana mua i ke ʻano sublimation vapor sublimate e hoʻoheheʻe i ka pauka i loko o kahi ʻano wela wela, a hoʻoulu i nā kristal carbide silika ma ka ʻili o ka kristal hua ma o ka mana o kahi kahua wela. Ke hoʻohana nei i ka wafer silicon carbide ma ke ʻano he substrate, hoʻohana ʻia ka waiho ʻana o ka mahu kemika e waiho i kahi papa o ka aniani hoʻokahi ma ka wafer e hana i kahi wafer epitaxial. Ma waena o lākou, hiki ke hana ʻia i kahi ʻāpana epitaxial silicon carbide ma kahi substrate silicon carbide conductive i nā mana mana, i hoʻohana nui ʻia i nā kaʻa uila, photovoltaics a me nā māla ʻē aʻe; e ulu ana i kahi papa epitaxial gallium nitride ma kahi semi-insulatingʻāpana kalapona silikahiki ke hana hou ʻia i mau ʻenehana lekiō, hoʻohana ʻia i nā kamaʻilio 5G a me nā kahua ʻē aʻe.

I kēia manawa, loaʻa i nā substrates silicon carbide nā pale ʻenehana kiʻekiʻe loa i ke kaulahao ʻoihana silicon carbide, a ʻo nā substrates silicon carbide ka mea paʻakikī loa e hana.

ʻAʻole i hoʻopau piha ʻia ka bottleneck hana o SiC, a ʻaʻole paʻa ka maikaʻi o nā kia aniani maka a aia kahi pilikia hua, e alakaʻi ana i ke kumukūʻai kiʻekiʻe o nā polokalamu SiC. He 3 mau lā wale nō ka awelika no ka ulu ʻana o nā mea silika a lilo i koʻokoʻo aniani, akā hoʻokahi pule no ke koʻokoʻo aniani carbide silika. Hiki ke ulu i 200cm ka lōʻihi o ke koʻokoʻo aniani silika maʻamau, akā hiki ke ulu i 2cm ka lōʻihi o ke koʻokoʻo kalapona silika. Eia kekahi, ʻo ka SiC ponoʻī he mea paʻakikī a palupalu, a ʻo nā wafers i hana ʻia mai ia mea e maʻalahi i ka ʻokiʻoki ʻana i ka wā e hoʻohana ai i ka wafer dicing mīkini kuʻuna, e pili ana i ka hua a me ka hilinaʻi. ʻOkoʻa loa nā substrates SiC mai nā ingots silicon kuʻuna, a pono e hoʻomohala ʻia nā mea a pau mai nā mea hana, nā kaʻina hana, ka hana ʻana a hiki i ka ʻoki ʻana no ka mālama ʻana i ka carbide silicon.

Hoʻokaʻawale ʻia ke kaulahao ʻoihana silicon carbide i ʻehā mau loulou nui: substrate, epitaxy, nā mea hana a me nā noi. ʻO nā mea substrate ke kumu o ke kaulahao ʻoihana, ʻo nā mea epitaxial ke kī i ka hana ʻana i nā mea hana, ʻo nā mea pono ke kumu o ke kaulahao ʻoihana, a ʻo nā noi ka mea hoʻoikaika no ka hoʻomohala ʻoihana. Hoʻohana ka ʻoihana upstream i nā mea maka e hana i nā mea substrate ma o nā ʻano sublimation vapor sublimation a me nā ʻano hana ʻē aʻe, a laila hoʻohana i nā ʻano deposition chemical a me nā ala ʻē aʻe e ulu ai i nā mea epitaxial. Hoʻohana ka ʻoihana midstream i nā mea i luna e hana i nā mea uila uila, nā mana mana a me nā mea hana ʻē aʻe, i hoʻohana hope ʻia i nā kamaʻilio 5G lalo. , nā kaʻa uila, nā kaʻa kaʻa, a me nā mea ʻē aʻe. Ma waena o lākou, substrate a me epitaxy helu no 60% o ke kumukūʻai o ke kaulahao ʻoihana a ʻo ia ka waiwai nui o ke kaulahao ʻoihana.

SiC substrate: Hana ʻia nā kristal SiC me ka hoʻohana ʻana i ke ʻano Lely. Ke hoʻololi nei nā huahana koʻikoʻi honua mai 4 iniha a 6 iniha, a ua hoʻomohala ʻia nā huahana substrate conductive 8 iniha. ʻO ka nui o nā substrates home he 4 iniha. No ka mea hiki ke hoʻonui ʻia a hoʻololi ʻia nā laina hana wafer silicon 6-inch e hana ai i nā polokalamu SiC, e mālama ʻia ka mākeke kiʻekiʻe o 6-inch SiC substrates no ka manawa lōʻihi.

He paʻakikī a paʻakikī ka hana ʻana o ke kaʻina hana silicon carbide substrate. ʻO ka substrate Silicon carbide he mea hoʻohui semiconductor hoʻokahi mea aniani i haku ʻia i ʻelua mau mea: carbon a me ke silika. I kēia manawa, hoʻohana nui ka ʻoihana i ka pauka kalapona maʻemaʻe kiʻekiʻe a me ka pauka silika maʻemaʻe kiʻekiʻe e like me nā mea maka e synthesize i ka pauka carbide silicon. Ma lalo o kahi kahua wela kūikawā, hoʻohana ʻia ke ʻano o ka hoʻoili ʻana i ka mahu kino (PVT method) no ka ulu ʻana i ka silicon carbide o nā ʻokoʻa like ʻole i loko o ka umu hoʻoulu ulu. Hoʻopau hope ʻia ka ingot kristal, ʻoki ʻia, lepo, hoʻomaʻemaʻe ʻia, hoʻomaʻemaʻe a me nā kaʻina hana ʻē aʻe e hana i kahi substrate carbide silicon.