ʻO ka ʻenehana kumu no ka ulu ʻana oSiC epitaxialʻO ka mea mua ka ʻenehana hoʻomalu defect, ʻoi aku hoʻi no ka ʻenehana hoʻokele defect i hiki i ka hemahema o ka hāmeʻa a i ʻole ka hōʻino ʻana i ka hilinaʻi. ʻO ke aʻo ʻana i ke ʻano o nā hemahema substrate e hoʻonui ana i ka papa epitaxial i ka wā o ka ulu ʻana o ka epitaxial, ka hoʻololi ʻana a me ka hoʻololi ʻana i nā kānāwai o nā hemahema ma ke kikowaena ma waena o ka substrate a me ka papa epitaxial, a ʻo ke kumu nucleation o nā hemahema ke kumu no ka wehewehe ʻana i ka pilina ma waena. nā hemahema substrate a me nā hemahema epitaxial structural defects, hiki ke alakaʻi maikaʻi i ka nānā ʻana i ka substrate a me ka hoʻomaikaʻi ʻana i ke kaʻina hana epitaxial.
ʻO nā hemahema onā papa epitaxial silicon carbideua māhele nui ʻia i ʻelua mau ʻāpana: nā defects crystal and surface morphology defects. ʻO nā pōʻino kristal, me nā pōʻino kiko, nā dislocations screw, microtubule defects, edge dislocations, etc., no ka hapa nui o nā hemahema ma nā substrates SiC a hoʻolaha i ka papa epitaxial. Hiki ke ʻike pono ʻia nā hemahema o ka morphology me ka maka ʻōlohelohe me ka microscope a loaʻa nā ʻano morphological maʻamau. ʻO nā hemahema o ka morphology o ka ʻili, ʻo ia ka: Scratch, Triangular defect, Carrot defect, Downfall, and Particle, e like me ia i hōʻike ʻia ma ke kiʻi 4. I ka wā o ke kaʻina epitaxial, nā mea ʻē aʻe, nā hemahema substrate, nā pōʻino o ka ʻili, a me nā kaʻina hana epitaxial e hoʻopilikia i ke kahe o ka pae kūloko. ʻano ulu, e hopena i nā hemahema o ka morphology.
Papa 1.Nā kumu no ka hoʻokumu ʻana i nā hemahema matrix maʻamau a me nā hemahema o ka morphology surface ma nā papa epitaxial SiC
Nā hemahema kiko
Hoʻokumu ʻia nā hemahema kiko e nā hakahaka a i ʻole nā hakahaka ma kahi lattice hoʻokahi a i ʻole kekahi mau lattice, a ʻaʻohe o lākou hoʻonui spatial. Hiki i nā hemahema kikoʻī ma kēlā me kēia kaʻina hana, ʻoi aku hoʻi i ka hoʻokomo ʻana i nā ion. Eia nō naʻe, paʻakikī lākou e ʻike, a paʻakikī hoʻi ka pilina ma waena o ka hoʻololi ʻana o nā hemahema kikoʻī a me nā hemahema ʻē aʻe.
Micropipes (MP)
ʻO nā micropipes nā ʻūhā hollow screws e laha ana ma ke koʻi ulu, me ka Burgers vector <0001>. ʻO ke anawaena o nā microtubes mai kahi hapa o ka micron a hiki i nā ʻumi microns. Hōʻike nā microtubes i nā hiʻohiʻona nui e like me ka lua ma ka ʻili o nā wafers SiC. ʻO ka maʻamau, ʻo ka nui o nā microtubes ma kahi o 0.1 ~ 1cm-2 a hoʻomau i ka emi ʻana i ka nānā ʻana i ka maikaʻi o ka hana wafer pāʻoihana.
Nā hoʻokaʻawale ʻana (TSD) a me nā ʻokiʻoki (TED)
ʻO nā dislocations ma SiC ke kumu nui o ka hoʻohaʻahaʻa ʻana a me ka hemahema. Holo nā dislocations ʻelua (TSD) a me ka dislocations edge (TED) ma ke koʻi ulu, me nā vectors Burgers o <0001> a me 1/3<11–20>, kēlā me kēia.
Hiki ke hoʻonui i nā dislocations screw (TSD) a me ka dislocations edge (TED) mai ke pani a hiki i ka ʻili wafer a lawe mai i nā hiʻohiʻona liʻiliʻi e like me ka lua (Figure 4b). ʻO ka maʻamau, ʻo ka nui o nā dislocations e pili ana i 10 mau manawa o ka dislocations screw. ʻO nā dislocations i hoʻonui ʻia, ʻo ia hoʻi, e hoʻonui ana mai ka substrate a i ka epilayer, hiki ke hoʻololi ʻia i nā hemahema ʻē aʻe a hoʻolaha ma ke koʻi ulu. I ka wāSiC epitaxialʻO ka ulu ʻana, hoʻololi ʻia nā dislocations i hoʻopaʻa ʻia (SF) a i ʻole carrot defects, aʻo nā dislocations lihi i nā epilayers e hōʻike ʻia e hoʻohuli ʻia mai nā dislocations plane basal (BPDs) i hoʻoili ʻia mai ka substrate i ka wā ulu epitaxial.
ʻO ka wehe ʻana o ka mokulele kumu (BPD)
Aia ma ka mokulele SiC basal, me kahi vector Burgers o 1/3 <11–20>. ʻAʻole ʻike ʻia nā BPD ma ka ʻili o nā wafers SiC. Hoʻopili pinepine ʻia lākou i ka substrate me ka nui o 1500 cm-2, aʻo kā lākou density i ka epilayer he 10 cm-2 wale nō. ʻO kaʻikeʻana i nā BPD e hoʻohana ana i ka photoluminescence (PL) e hōʻike ana i nā hiʻohiʻona laina, e like me ka hōʻikeʻana ma ka Figure 4c. I ka wāSiC epitaxialka ulu ʻana, hiki ke hoʻololi ʻia nā BPD i hoʻopaʻa ʻia (SF) a i ʻole nā dislocations (TED).
Nā hewa hoʻopaʻa ʻana (SF)
Nā hemahema i ke kaʻina hoʻopaʻa ʻana o ka mokulele basal SiC. Hiki ke ʻike ʻia nā hewa hoʻopaʻa ʻana i ka papa epitaxial ma ka hoʻoili ʻana i nā SF i loko o ka substrate, a i ʻole e pili ana i ka hoʻonui a me ka hoʻololi ʻana o nā dislocations basal plane (BPDs) a me nā threading screw dislocations (TSDs). ʻO ka mea maʻamau, ʻoi aku ka liʻiliʻi o nā SF ma mua o 1 cm-2, a hōʻike lākou i kahi hiʻohiʻona triangular ke ʻike ʻia me ka hoʻohana ʻana iā PL, e like me ka hōʻike ʻana ma ke Kiʻi 4e. Eia nō naʻe, hiki ke hoʻokumu ʻia nā ʻano like ʻole o ka hoʻopaʻa ʻana i nā hewa ma SiC, e like me ke ʻano Shockley a me ke ʻano Frank, no ka mea, ʻo kahi liʻiliʻi o ka hoʻopaʻa ʻana i ka ikehu ma waena o nā mokulele hiki ke alakaʻi i kahi ʻano like ʻole i ke kaʻina hoʻonohonoho.
Hāʻule
ʻO ka hāʻule hāʻule ma muli o ka hāʻule ʻana o ka ʻāpana ma ka paia o luna a me ka ʻaoʻao o ke keʻena pane i ka wā o ka ulu ʻana, hiki ke hoʻonui ʻia ma ka hoʻonui ʻana i ke kaʻina mālama manawa o ke keʻena hopena graphite consumables.
ʻAha ʻekolu
He 3C-SiC polytype hoʻokomo ʻia e hoʻonui i ka ʻili o ka epilayer SiC ma ke ala o ka mokulele basal, e like me ka hōʻike ʻana ma ke Kiʻi 4g. Hiki ke hana ʻia e nā ʻāpana hāʻule ma ka ʻili o ka epilayer SiC i ka wā ulu epitaxial. Hoʻokomo ʻia nā ʻāpana i ka epilayer a keʻakeʻa i ke kaʻina o ka ulu ʻana, e hopena ana i ka 3C-SiC polytype inclusions, e hōʻike ana i nā hiʻohiʻona o ka ʻaoʻao triangular koi me nā ʻāpana i loaʻa ma nā vertices o ka ʻāpana triangular. Nui nā haʻawina i hōʻike ʻia i ke kumu o ka polytype inclusions i ka ʻili ʻili, micropipes, a me nā ʻāpana kūpono ʻole o ke kaʻina ulu.
Kāleka kīnā
A carrot defect is a stacking fault complex with two ends located at the TSD and SF basal crystal planes, hoʻopau ʻia e ka Frank-type dislocation, a ʻo ka nui o ka defect carrot e pili ana i ka prismatic stacking fault. ʻO ka hui pū ʻana o kēia mau hiʻohiʻona e hoʻokumu i ka morphology ili o ke kīnā kāloti, e like me ke ʻano kāloti me ka nui o lalo o 1 cm-2, e like me ka mea i hōʻike ʻia ma ke Kiʻi 4f. Hoʻokumu maʻalahi ʻia nā hemahema kāloti ma ka hoʻoliʻiliʻi ʻana i nā ʻōpala, nā TSD, a i ʻole nā hemahema substrate.
Nā ʻōpala
ʻO nā ʻōpala nā pōʻino mechanical ma ka ʻili o nā wafers SiC i hana ʻia i ka wā o ka hana ʻana, e like me ka hōʻike ʻana ma ke Kiʻi 4h. Hiki ke hoʻopilikia i nā ʻōpala ma ka substrate SiC i ka ulu ʻana o ka epilayer, e hoʻohua i kahi lālani o nā dislocations kiʻekiʻe i loko o ka epilayer, a i ʻole nā ʻōpala i lilo i kumu no ka hoʻokumu ʻana i nā hemahema kāloti. No laila, he mea koʻikoʻi ka poli pono ʻana i nā wafers SiC no ka mea hiki i kēia mau ʻōpala ke loaʻa ka hopena koʻikoʻi i ka hana ʻana o ka hāmeʻa i ka wā e ʻike ʻia ai lākou ma ka wahi hana o ka mea hana.
Nā hemahema o ka morphology ili
ʻO ka hōʻiliʻili ʻana i ka pae he ʻāpana ʻili i hoʻokumu ʻia i ka wā o ke kaʻina ulu epitaxial SiC, kahi e hana ai i nā triangle obtuse a i ʻole nā hiʻohiʻona trapezoidal ma ka ʻili o ka epilayer SiC. Nui nā hemahema ʻē aʻe, e like me nā lua o ka ʻili, nā ʻōpala a me nā ʻili. Hoʻokumu pinepine ʻia kēia mau hemahema e nā kaʻina hana ulu ʻole a me ka wehe ʻole ʻana i ka pōʻino polishing, e hoʻopilikia i ka hana ʻana o ka hāmeʻa.
Ka manawa hoʻouna: Jun-05-2024