ʻO ka hoʻoheheʻe wela o ka Silicon Crystal Single

ʻO ke kūkulu ʻia ʻana o ka silicon dioxide ma ka ʻili o ke silika ua kapa ʻia ʻo oxidation, a ʻo ka hana ʻana o ka silicon dioxide paʻa a paʻa ikaika i alakaʻi ʻia i ka hānau ʻana o ka ʻenehana planar circuit circuit. ʻOiai he nui nā ala e ulu pono ai i ka silicon dioxide ma luna o ka ʻili o ke silika, hana maʻamau ia e ka thermal oxidation, ʻo ia hoʻi ka hōʻike ʻana i ke silikoni i kahi kiʻekiʻe wela o ka oxidizing environment (oxygen, wai). Hiki i nā ʻano hoʻonā wela ke hoʻomalu i ka mānoanoa o ke kiʻiʻoniʻoni a me nā hiʻohiʻona o ka pilina silicon/silicon dioxide i ka wā e hoʻomākaukau ai i nā kiʻiʻoniʻoni silicon dioxide. ʻO nā ʻenehana ʻē aʻe no ka ulu ʻana i ka silicon dioxide ʻo ia ka anodization plasma a me ka anodization pulu, akā ʻaʻole i hoʻohana nui ʻia kēia mau ʻenehana i nā kaʻina VLSI.

Hōʻike ka silikoni i ka manaʻo e hana i ka silicon dioxide paʻa. Inā hōʻike ʻia ke kilikaka i ʻoki hou ʻia i kahi kaiapuni oxidizing (e like me ka oxygen, ka wai), e hana ia i kahi ʻāpana ʻokikene lahilahi loa (<20Å) ʻoiai ma ka wela lumi. Ke hōʻike ʻia ke silikoni i kahi kaiapuni oxidizing i ka wela kiʻekiʻe, e hana ʻia kahi papa oxide mānoanoa i ka wikiwiki. Hoʻomaopopo maikaʻi ʻia ke ʻano kumu o ka hoʻokumu ʻana o ka silicon dioxide mai ke silika. Ua hoʻomohala ʻo Deal lāua ʻo Grove i kahi hoʻohālike makemakika e wehewehe pono ana i ka ulu ʻana o nā kiʻiʻoniʻoni oxide ma mua o 300Å. Ua manaʻo lākou e hoʻokō ʻia ka oxidation ma ke ʻano aʻe, ʻo ia hoʻi, ʻo ka oxidant (nā mole wai a me nā molekele oxygen) e hoʻopuehu ma o ka papa ʻokikene i kēia manawa i ka interface Si/SiO2, kahi e hana ai ka oxidant me ke silika e hana i ka silicon dioxide. ʻO ka hopena nui e hana ai i ka silicon dioxide ua wehewehe ʻia penei:

Loaʻa ka hopena oxidation ma ke kikowaena Si/SiO2, no laila ke ulu ka papa oxide, e hoʻopau mau ʻia ke kilika a hoʻopiʻi mālie ke kilika. E like me ka nui like a me ka molecular kaumaha o ke silika a me ka silicon dioxide, hiki ke ʻike ʻia he 44%. Ma kēia ʻano, inā piʻi ka papa oxide i 10,000Å, 4400Å o ke silika e pau. He mea nui kēia pilina no ka helu ʻana i ke kiʻekiʻe o nā ʻanuʻu i hana ʻia ma kawafer silika. ʻO nā ʻanuʻu ka hopena o nā helu oxidation like ʻole ma nā wahi like ʻole ma ka ʻili wafer silika.

Hāʻawi pū mākou i ka graphite maʻemaʻe kiʻekiʻe a me nā huahana silicon carbide, i hoʻohana nui ʻia i ka hana wafer e like me ka oxidation, diffusion, a me ka annealing.

Welina mai i nā mea kūʻai mai a puni ka honua e kipa mai iā mākou no kahi kūkākūkā hou aku!

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