Silicon carbide mea A me kona mau hiʻohiʻona

ʻO ka mīkini Semiconductor ke kumu o ka mīkini ʻenehana ʻenehana hou, hoʻohana nui ʻia i nā kamepiula, nā mea kūʻai uila, nā kamaʻilio pūnaewele, nā ʻenehana automotive, a me nā wahi ʻē aʻe o ke kumu, ʻo ka ʻoihana semiconductor ka nui o nā ʻāpana kumu ʻehā: integrated circuits, optoelectronic device, mea hoʻokaʻawale, mea ʻike, ʻoi aku ka nui ma mua o 80% o nā kaapuni i hoʻohui ʻia, no laila pinepine a me ka semiconductor a me ka hui kaapuni like.

Integrated kaapuni, e like me ka huahana waeʻano ua mahele nui ia i eha waeʻano: microprocessor, hoʻomanaʻo, logic mea, simulator māhele. Eia nō naʻe, me ka hoʻonui mau ʻana o ke kahua noi o nā mea semiconductor, nui nā manawa kūikawā e koi i nā semiconductor e hiki ke hoʻopili i ka hoʻohana ʻana i ka wela kiʻekiʻe, ka radiation ikaika, ka mana kiʻekiʻe a me nā wahi ʻē aʻe, ʻaʻole e hōʻino, ka mua a me ka lua o ka hanauna. ʻAʻole mana nā mea semiconductor, no laila ua hoʻokumu ʻia ke kolu o nā mea semiconductor.

kiʻi kiʻi1

I kēia manawa, hōʻike ʻia nā mea semiconductor ākea ākeakalapona kalapona(SiC), gallium nitride (GaN), zinc oxide (ZnO), daimana, alumini nitride (AlN) noho i ka mākeke koʻikoʻi me nā pono ʻoi aku ka nui, i kapa ʻia ʻo ke kolu o nā mea semiconductor hanauna. ʻO ke kolu o ka hanauna o nā mea semiconductor me kahi ākea ākea ākea, ʻoi aku ka kiʻekiʻe o ke kahua uila breakdown, thermal conductivity, electronic saturated rate a me ka hiki ke pale aku i ka radiation, ʻoi aku ka maikaʻi no ka hana ʻana i ke kiʻekiʻe kiʻekiʻe, ke alapine kiʻekiʻe, ke kū'ē i ka radiation a me nā mea mana kiʻekiʻe. , ʻike pinepine ʻia ʻo nā mea semiconductor bandgap ākea (ʻoi aku ka nui o ka laulā band i pāpā ʻia ma mua o 2.2 eV), i kapa ʻia hoʻi ka wela kiʻekiʻe nā mea semiconductor. Mai ka noiʻi o kēia manawa e pili ana i nā mea semiconductor ʻekolu o nā hanauna a me nā mea hana, silicon carbide a me gallium nitride semiconductor mea ʻoi aku ka makua, aʻenehana kalapona silikaʻo ia ka mea ʻoi loa, ʻoiai ʻo ka noiʻi ʻana i ka zinc oxide, daimana, alumini nitride a me nā mea ʻē aʻe i ka pae mua.

Nā mea a me kā lākou mau waiwai:

Silicon carbideHoʻohana nui ʻia nā mea i nā bearings seramika, nā kīwaha, nā mea semiconductor, gyros, nā mea ana, aerospace a me nā māla ʻē aʻe, ua lilo i mea hiki ke hoʻololi ʻia i nā ʻoihana ʻoihana.

kiʻi kiʻi2

ʻO SiC kahi ʻano superlattice kūlohelohe a me kahi polytype homogeneous maʻamau. Aia ma mua o 200 (ʻike ʻia i kēia manawa) nā ʻohana polytypic homotypic ma muli o ka ʻokoʻa o ka hoʻopili ʻana ma waena o nā papa diatomic Si a me C, kahi e alakaʻi ai i nā hale aniani like ʻole. No laila, kūpono loa ʻo SiC no ka hanauna hou o ka light emitting diode (LED) substrate material, nā mea uila mana kiʻekiʻe.

hiʻona

waiwai kino

ʻO ka paʻakikī kiʻekiʻe (3000kg / mm), hiki ke ʻoki i ka ruby
ʻO ke kūpale ʻaʻahu kiʻekiʻe, ʻelua wale nō i ke daimana
ʻO ka conductivity thermal he 3 mau manawa kiʻekiʻe ma mua o ka Si a me 8 ~ 10 mau manawa kiʻekiʻe ma mua o GaAs.
He kiʻekiʻe ka paʻa wela o SiC a hiki ʻole ke hoʻoheheʻe ʻia i ke kaomi lewa
He mea koʻikoʻi ka hana hoʻoheheʻe wela maikaʻi no nā mea mana kiʻekiʻe
 

 

waiwai kemika

ʻO ke kūpaʻa corrosion ikaika loa, kūpaʻa i kahi kokoke i nā mea ʻino i ʻike ʻia ma ka lumi wela
Hiki i ka ʻili o SiC ke hoʻoheheʻe ʻia e hana i ka SiO, ka ʻili lahilahi, hiki ke pale i kona hoʻoneʻe hou ʻana, i loko Ma luna o 1700 ℃, hoʻoheheʻe ka kiʻiʻoniʻoni oxide a oxidize wikiwiki
ʻO ka bandgap o 4H-SIC a me 6H-SIC ma kahi o 3 manawa o ko Si a me 2 manawa o ko GaAs: He ʻoi aku ka kiʻekiʻe o ka ikaika o ke kahua uila haʻihaʻi ma mua o Si, a ua piha ka wikiwiki o ka electron drift. ʻElua a me ka hapa manawa o ka Si. ʻOi aku ka laulā o ka bandgap o 4H-SIC ma mua o ko 6H-SIC

Ka manawa hoʻouna: ʻAukake-01-2022
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