Ke kūlana noiʻi o ka SiC integrated circuit

ʻOkoʻa mai nā mea ʻokoʻa S1C e ʻimi nei i ka volta kiʻekiʻe, ka mana kiʻekiʻe, ke alapine kiʻekiʻe a me nā hiʻohiʻona kiʻekiʻe, ʻo ka pahuhopu noiʻi o SiC integrated circuit ʻo ia ka loaʻa ʻana o ke kaapuni kiʻi kiʻekiʻe kiʻekiʻe no ka kaapuni mana ICs mana akamai. ʻOiai he haʻahaʻa loa ʻo SiC integrated circuit no ka māla uila kūloko, no laila e emi loa ka mana o ka microtubules defect, ʻo ia ka ʻāpana mua o ka monolithic SiC integrated operational amplifier chip i hōʻoia ʻia, ʻoi aku ka kiʻekiʻe o ka huahana i hoʻopau ʻia a hoʻoholo ʻia e ka hua. ma mua o nā hemahema microtubules, no laila, ma muli o ke kumu hoʻohālike SiC a ʻokoʻa loa nā mea Si a me CaAs. Hoʻokumu ʻia ka chip i ka ʻenehana NMOSFET depletion. ʻO ke kumu nui ʻo ia ka haʻahaʻa haʻahaʻa loa o ka neʻe ʻana o ka mea lawe kaʻa hope ʻo SiC MOSFET. I mea e hoʻomaikaʻi ai i ka neʻe ʻana o ka ʻili o Sic, pono ia e hoʻomaikaʻi a hoʻomaikaʻi i ke kaʻina hana o ka thermal oxidation o Sic.

Ua hana ʻo Purdue University i nā hana he nui ma ka SiC integrated circuits. I ka makahiki 1992, ua hoʻomohala maikaʻi ʻia ka hale hana ma muli o ke kahawai hoʻohuli 6H-SIC NMOSFETs monolithic digital integrated circuit. Aia i loko o ka puʻupuʻu a ʻaʻole ʻīpuka, ʻaʻole ʻīpuka, ma luna a i ʻole ʻīpuka, helu helu binary, a me nā kaapuni hapalua adder a hiki ke hana pono i ka pae wela o 25°C a 300°C. Ma 1995, ua hana ʻia ka mokulele SiC mua MESFET Ics me ka hoʻohana ʻana i ka ʻenehana hoʻokaʻawale vanadium injection. Ma ke kaohi pono ʻana i ka nui o ka vanadium injected, hiki ke loaʻa kahi SiC insulating.

I loko o nā kaʻapuni loiloi kikohoʻe, ʻoi aku ka maikaʻi o nā kaapuni CMOS ma mua o nā kaapuni NMOS. I Kepakemapa 1996, ua hana ʻia ka 6H-SIC CMOS digital integrated circuit. Hoʻohana ka hāmeʻa i ka injected N-order a me ka deposition oxide layer, akā ma muli o nā pilikia kaʻina hana ʻē aʻe, ʻoi aku ka kiʻekiʻe o ka chip PMOSFETs threshold voltage. I Malaki 1997 i ka hana ʻana i ka lua o ka hanauna SiC CMOS kaapuni. Hoʻohana ʻia ka ʻenehana o ka injecting P trap a me ka thermal growth oxide layer. ʻO ka volta paepae o nā PMOSEFT i loaʻa ma ke kaʻina hana e pili ana i -4.5V. Hoʻohana maikaʻi nā kaapuni āpau ma ka chip i ka lumi wela a hiki i 300°C a hoʻohana ʻia e ka mana hoʻokahi, hiki ke loaʻa ma nā wahi āpau mai 5 a 15V.

Me ka hoʻomaikaʻi ʻana i ka maikaʻi o ka substrate wafer, ʻoi aku ka hana a ʻoi aku ka maikaʻi o nā kaapuni i hoʻohui ʻia. Eia nō naʻe, ke hoʻopau maoli ʻia ka pilikia o ka mea SiC a me ke kaʻina hana, ʻo ka hilinaʻi o ka hāmeʻa a me ka pūʻolo e lilo i kumu nui e pili ana i ka hana o nā kaʻa hoʻohui SiC kiʻekiʻe.