2 Nā hopena hoʻokolohua a me nā kūkākūkā
2.1Papa epitaxialka mānoanoa a me ke kūlike
ʻO ka mānoanoa o ka papa epitaxial, ka manaʻo doping a me ka kūlike kekahi o nā hōʻailona kumu no ka hoʻoholo ʻana i ka maikaʻi o nā wafers epitaxial. ʻO ka mānoanoa hiki ke hoʻopaʻa pono ʻia, ka ʻike doping a me ka like ʻole i loko o ka wafer ke kī e hōʻoia ai i ka hana a me ke kūlikeNā lako mana SiC, a me ka mānoanoa o ka papa epitaxial a me ka like ʻana o ka hoʻopaʻa ʻana i ka doping he mau kumu koʻikoʻi no ke ana ʻana i ke kaʻina hana o nā lako epitaxial.
Hōʻike ka Figure 3 i ka like ʻana o ka mānoanoa a me ka puʻupuʻu mahele o 150 mm a me 200 mmSiC epitaxial wafers. Hiki ke ʻike ʻia mai ke kiʻi ʻana, ʻo ka ʻalihi mānoanoa o ka papa epitaxial e like me ke kiko waena o ka wafer. ʻO ka manawa kaʻina hana epitaxial he 600s, ʻo ka awelika epitaxial layer mānoanoa o ka 150mm epitaxial wafer he 10.89 um, a he 1.05% ka mānoanoa like ʻole. Ma ka helu ʻana, ʻo ka ulu ʻana o ka epitaxial he 65.3 um / h, ʻo ia kahi pae kaʻina hana epitaxial wikiwiki. Ma lalo o ka manawa kaʻina hana epitaxial, ʻo ka mānoanoa epitaxial layer o ka 200 mm epitaxial wafer he 10.10 um, ʻo ka mānoanoa like ʻole i loko o 1.36%, a ʻo ka ulu ulu holoʻokoʻa he 60.60 um / h, he haʻahaʻa haʻahaʻa ma mua o ka ulu epitaxial 150 mm. uku. No ka mea, aia ke poho ma ke ala ke kahe mai ke kumu silikona a me ke kumu kalapona mai ka upstream o ke keena pane ma ka ili wafer a hiki i lalo o ke keena pane, a oi aku ka nui o ka 200 mm wafer ma mua o ka 150 mm. Ke holo nei ke kinoea ma ka ʻili o ka wafer 200 mm no kahi lōʻihi loa, a ʻoi aku ka nui o ke kinoea kumu i hoʻopau ʻia ma ke ala. Ma lalo o ke kūlana e hoʻololi mau ana ka wafer, ʻoi aku ka lahilahi o ka mānoanoa holoʻokoʻa o ka papa epitaxial, no laila ua lohi ka ulu. Ma ke ʻano holoʻokoʻa, ʻoi aku ka maikaʻi o ka mānoanoa like ʻole o 150 mm a me 200 mm epitaxial wafers, a hiki i ke kaʻina hana o nā mea hana ke hoʻokō i nā koi o nā mea kiʻekiʻe.
2.2 Epitaxial papa doping kuʻina a me ka uniformity
Hōʻike ke kiʻi 4 i ka like ʻana o ka hoʻopaʻa ʻana o ka doping a me ka hāʻawi ʻana i ka pihi o 150 mm a me 200 mm.SiC epitaxial wafers. E like me ka mea i ʻike ʻia ma ke kiʻi, ʻo ka pihi hoʻomāhele kaʻina ma ka wafer epitaxial he symmetry maopopo e pili ana i ke kikowaena o ka wafer. ʻO ka hoʻohālikelike ʻana o ka doping o nā papa epitaxial 150 mm a me 200 mm he 2.80% a me 2.66% kēlā me kēia, hiki ke hoʻomalu ʻia i loko o 3%, he pae maikaʻi loa ia no nā lako honua like. Hoʻokaʻawale ʻia ka ʻōkuhi doping o ka papa epitaxial ma kahi ʻano "W" ma ke ʻano o ke anawaena, ka mea i hoʻoholo nui ʻia e ke kahe kahe o ka pā wela wela epitaxial furnace, no ka mea, ʻo ke kuhikuhi ʻana o ke ea o ka epitaxial epitaxial growth furnace. ka hopena o ka ea inlet (upstream) a kahe mai ka hopena o lalo ma ke ʻano laminar ma o ka ʻili wafer; no ka mea, ʻoi aku ka kiʻekiʻe o ka "hoʻemi ʻana ma ke ala" o ke kumu kalapona (C2H4) ma mua o ke kumu silikona (TCS), i ka wā e kaʻawili ai ka wafer, e emi mālie ka C/Si maoli ma ka ʻili wafer mai ka lihi a hiki i ka. ke kikowaena (ʻo ke kumu kalapona ma ke kikowaena he liʻiliʻi), e like me ka "kūlana kūlana hoʻokūkū" o C a me N, ke emi mālie nei ka neʻe ʻana o ka doping i waenakonu o ka wafer i ka ʻaoʻao, i mea e loaʻa ai ka hoʻohālikelike maikaʻi loa. Hoʻohui ʻia ka lihi N2 ma ke ʻano he uku i ka wā o ke kaʻina hana epitaxial e hoʻolōʻihi i ka emi ʻana o ka neʻe ʻana o ka doping mai ke kikowaena a i ka lihi, no laila e hōʻike ʻia ke ʻano "W" i ka ʻaoʻao hope loa.
2.3 Nā hemahema papa epitaxial
Ma waho aʻe o ka mānoanoa a me ka noʻonoʻo doping, ʻo ke kiʻekiʻe o ka epitaxial layer defect control kahi kumu nui no ke ana ʻana i ka maikaʻi o nā wafers epitaxial a me kahi hōʻailona koʻikoʻi o ke kaʻina hana o nā lako epitaxial. ʻOiai he ʻokoʻa nā koi o ka SBD a me MOSFET no nā hemahema, ʻoi aku ka maopopo o nā hemahema o ka morphology o ka ʻili e like me ka hāʻule hāʻule, triangle defects, carrot defects, comet defects, etc. He kiʻekiʻe ka hiki ʻole o ka hāʻule ʻana o kēia mau hemahema, no laila he mea nui ka hoʻomalu ʻana i ka helu o nā mea pepehi kanaka no ka hoʻomaikaʻi ʻana i ka hua chip a me ka hōʻemi ʻana i nā kumukūʻai. Hōʻike ka Figure 5 i ka puʻunaue ʻana o nā mea pepehi kanaka o 150 mm a me 200 mm SiC epitaxial wafers. Ma lalo o ke ʻano ʻaʻohe mea ʻike maopopo ʻole i ka ratio C / Si, hiki ke hoʻopau maoli ʻia nā hemahema kāloti a me nā comet defects, ʻoiai ʻo ka hāʻule ʻana o nā hemahema a me nā hemahema triangle e pili ana i ka hoʻomaʻemaʻe ʻana i ka wā o ka hana ʻana o nā mea epitaxial, ka pae haumia o ka graphite. ʻāpana i loko o ke keʻena pane, a me ka maikaʻi o ka substrate. Mai ka Papa 2, hiki ke ʻike ʻia e hiki ke hoʻomalu ʻia ka defect defect density o 150 mm a me 200 mm epitaxial wafers i loko o 0.3 particles/cm2, he pae maikaʻi loa ia no nā ʻano mea like. ʻOi aku ka maikaʻi o ka pae hoʻomalu defect defect density o 150 mm epitaxial wafer ma mua o ka 200 mm epitaxial wafer. ʻO kēia no ka mea ʻoi aku ka ʻoi o ke kaʻina hana hoʻomākaukau substrate o 150 mm ma mua o ka 200 mm, ʻoi aku ka maikaʻi o ka substrate, a ʻoi aku ka maikaʻi o ka pae hoʻomalu haumia o 150 mm graphite reaction chamber.
2.4 Epitaxial wafer ili roughness
Hōʻike ka 6 i nā kiʻi AFM o ka ʻili o 150 mm a me 200 mm SiC epitaxial wafers. Hiki ke ʻike ʻia ma ke kiʻi, ʻo ke kumu o ka ʻili o ka ʻili he 0.129 nm a me 0.113 nm pakahi, a maʻalahi ka ʻili o ka papa epitaxial me ka ʻike ʻole ʻia o ka macro-step aggregation phenomenon. Hōʻike kēia hanana i ka ulu ʻana o ka papa epitaxial e mālama mau i ke ʻano o ka ulu ʻana o ka pae i ka wā o ke kaʻina epitaxial holoʻokoʻa, a ʻaʻohe pae ʻanuʻu. Hiki ke ʻike ʻia ma ka hoʻohana ʻana i ke kaʻina ulu epitaxial optimized, hiki ke loaʻa nā papa epitaxial maʻemaʻe ma 150 mm a me 200 mm mau substrate haʻahaʻa.
3 Ka hopena
Ua hoʻomākaukau maikaʻi ʻia ka 150 mm a me 200 mm 4H-SiC homogeneous epitaxial wafers ma luna o nā substrates home me ka hoʻohana ʻana i nā mea ulu ulu epitaxial 200 mm SiC ponoʻī, a ua kūkulu ʻia ke kaʻina epitaxial homogeneous kūpono no 150 mm a me 200 mm. Hiki ke ʻoi aku ka nui o ka ulu epitaxial ma mua o 60 μm / h. ʻOiai e hālāwai ana i ka koi epitaxy kiʻekiʻe, ʻoi aku ka maikaʻi o ka wafer epitaxial. Hiki ke mālama ʻia ka mānoanoa like ʻole o ka 150 mm a me 200 mm SiC epitaxial wafers i loko o 1.5%, ʻoi aku ka nui o ka hoʻohālikelike ʻana ma lalo o 3%, ʻoi aku ka liʻiliʻi o ka defect defect ma mua o 0.3 particles/cm2, a ʻo ka epitaxial surface roughness root mean square Ra. emi iho ma lalo o 0.15 nm. Aia nā hōʻailona kaʻina hana nui o nā wafers epitaxial ma ka pae kiʻekiʻe o ka ʻoihana.
Puna: Mea Hana Kūikawā
Mea kākau: Xie Tianle, Li Ping, Yang Yu, Gong Xiaoliang, Ba Sai, Chen Guoqin, Wan Shengqiang
(48th Research Institute of China Electronics Technology Group Corporation, Changsha, Hunan 410111)
Ka manawa hoʻouna: Sep-04-2024