ʻAha ʻekolu
ʻO nā pōʻino triangular nā hemahema morphological nui loa i nā papa epitaxial SiC. Ua hōʻike ʻia kahi helu nui o nā moʻolelo moʻolelo e pili ana ka hoʻokumu ʻana o nā hemahema triangular i ke ʻano kristal 3C. Eia nō naʻe, ma muli o nā ʻano hana ulu like ʻole, ʻokoʻa loa ka morphology o nā hemahema triangular ma ka ʻili o ka papa epitaxial. Hiki ke hoʻokaʻawale ʻia i nā ʻano like ʻole:
(1) Aia nā kīnā triangular me nā ʻāpana nui ma luna
ʻO kēia ʻano kīnā triangular he ʻāpana spherical nui ma luna, hiki ke kumu i ka hāʻule ʻana o nā mea i ka wā o ka ulu ʻana. Hiki ke ʻike ʻia kahi ʻāpana triangular liʻiliʻi me ka ʻili ʻala i lalo mai kēia piko. ʻO kēia ma muli o ke kaʻina hana epitaxial, ʻelua mau ʻāpana 3C-SiC ʻokoʻa i hoʻokumu ʻia i ka ʻāpana triangular, kahi o ka papa mua i nucleated ma ka interface a ulu aʻe ma o ke kahe ʻana o 4H-SiC. Ke piʻi aʻe ka mānoanoa o ka papa epitaxial, ʻo ka papa lua o ka 3C polytype nucleates a ulu i loko o nā lua triangular liʻiliʻi, akā ʻaʻole i uhi pono ka ulu ʻana o 4H i ka ʻāpana polytype 3C, me ka maopopo ʻole o ka ʻāpana V-like o 3C-SiC. ʻike ʻia
(2) Aia nā ʻāpana liʻiliʻi ma luna a me nā kīnā triangular me ka ʻili ʻala
ʻOi aku ka liʻiliʻi o nā ʻāpana ma nā piko o kēia ʻano kīnā triangular, e like me ka hōʻike ʻana ma ke Kiʻi 4.2. A ʻo ka hapa nui o ka ʻāpana triangular ua uhi ʻia e ke kahe ʻanuʻu o 4H-SiC, ʻo ia hoʻi, ua hoʻokomo piha ʻia ka ʻāpana 3C-SiC holoʻokoʻa ma lalo o ka papa 4H-SiC. Hiki ke ʻike ʻia nā ʻanuʻu ulu o 4H-SiC ma ka ʻili kīnā triangular, akā ʻoi aku ka nui o kēia mau ʻanuʻu ma mua o nā ʻanuʻu ulu kristal 4H maʻamau.
(3) Nā hemahema triangular me ka ʻili pahee
ʻO kēia ʻano o ka pōʻino triangular he ʻano morphology ili maʻemaʻe, e like me ka hōʻike ʻana ma ke Kiʻi 4.3. No kēlā mau hemahema triangular, uhi ʻia ka papa 3C-SiC e ke kahe ʻanuʻu o 4H-SiC, a ʻoi aku ka maikaʻi o ke ʻano kristal 4H ma ka ʻili.
Nā hemahema lua epitaxial
ʻO nā lua epitaxial (Pits) kekahi o nā pōʻino maʻamau o ka morphology surface, a ua hōʻike ʻia ko lākou ʻano ʻano o ka ʻili a me ka hoʻolālā ʻana ma ke Kiʻi 4.4. Ka wahi o ka threading dislocation (TD) corrosion lua i nānā 'ia ma hope o KOH etching ma ke kua o ka mea i ike maopopo i ka wahi o na epitaxial lua ma mua o ka hoomakaukau ana o ka mea hana, e hōʻike ana i ka hookumu ana o ka epitaxial lua defects pili i threading dislocations.
kāloti kīnā
ʻO nā hemahema kāloti kahi kīnā maʻamau i nā papa epitaxial 4H-SiC, a ua hōʻike ʻia ko lākou morphology maʻamau ma ke Kiʻi 4.5. Ua hōʻike ʻia ka hemahema o kā kāloti e ka hui ʻana o nā hewa Franconian a me prismatic stacking faults i loaʻa ma ka mokulele basal i hoʻopili ʻia e nā dislocations e like me ka pae. Ua hōʻike pū ʻia e pili ana ka hoʻokumu ʻana o nā hemahema kāloti i ka TSD i ka substrate. ʻO Tsuchida H. et al. ua ʻike ʻia ka nui o nā hemahema kāloti i ka papa epitaxial e like me ka nui o TSD i ka substrate. A ma ka hoʻohālikelike ʻana i nā kiʻi morphology ili ma mua a ma hope o ka ulu ʻana o ka epitaxial, hiki ke ʻike ʻia nā hemahema kāloti a pau e pili ana i ka TSD i loko o ka substrate. Wu H. et al. Ua hoʻohana ʻo Raman i ka hōʻike hōʻike ʻana i ka hoʻāʻo ʻana e ʻike ʻaʻole i loaʻa i nā hemahema kāloti ke ʻano kristal 3C, akā ʻo ka polytype 4H-SiC wale nō.
Ka hopena o nā pōʻino triangular ma nā hiʻohiʻona MOSFET
He kiʻi 4.7 he histogram o ka puʻunaue helu helu o nā ʻano ʻelima o kahi hāmeʻa i loaʻa nā hemahema triangular. ʻO ka laina kiko ʻulaʻula ka laina hoʻokaʻawale no ka hoʻohaʻahaʻa ʻana i ke ʻano o ka mīkini, a ʻo ka laina kiko ʻulaʻula ka laina hoʻokaʻawale no ka hemahema o ka hāmeʻa. No ka hāʻule ʻana o ka hāmeʻa, nui ka hopena o nā hemahema triangular, a ʻoi aku ka nui o ka hemahema ma mua o 93%. Hoʻopili ʻia kēia i ka mana o nā hemahema triangular i nā hiʻohiʻona leakage hope o nā mea hana. A hiki i ka 93% o nā hāmeʻa i loaʻa nā hemahema triangular i hoʻonui nui i ka leaka hoʻohuli. Eia kekahi, he hopena koʻikoʻi nā hemahema triangular i nā hiʻohiʻona leakage o ka puka, me ka helu degradation o 60%. E like me ka mea i hōʻike ʻia ma ka Papa 4.2, no ka hoʻohaʻahaʻa ʻana i ka uila paepae a me ka hoʻohaʻahaʻa ʻana o ke kino diode, he liʻiliʻi ka hopena o nā hemahema triangular, a ʻo ka hoʻohaʻahaʻa ʻana he 26% a me 33% pakahi. Ma ke ʻano o ka hoʻonui ʻana i ke kū'ē, nāwaliwali ka hopena o nā hemahema triangular, a ʻo ka ratio degradation ma kahi o 33%.
Ka hopena o nā hemahema lua epitaxial ma nā hiʻohiʻona MOSFET
He kiʻi 4.8 he histogram o ka puʻunaue helu helu o ʻelima mau hiʻohiʻona o kahi mea i loaʻa nā hemahema lua epitaxial. ʻO ka laina kiko ʻulaʻula ka laina hoʻokaʻawale no ka hoʻohaʻahaʻa ʻana i ke ʻano o ka mīkini, a ʻo ka laina kiko ʻulaʻula ka laina hoʻokaʻawale no ka hemahema o ka hāmeʻa. Hiki ke ʻike ʻia mai kēia, ʻo ka nui o nā hāmeʻa i loaʻa nā hemahema lua epitaxial i ka laʻana SiC MOSFET ua like ia me ka helu o nā mea i loaʻa nā hemahema triangular. ʻOkoʻa ka hopena o nā pōʻino o ka lua epitaxial i nā hiʻohiʻona o ka mea hana me nā hemahema triangular. I ka ʻōlelo o ka hemahema o ka hāmeʻa, ʻo 47% wale nō ka hapa o nā hāmeʻa i loaʻa nā hemahema epitaxial pit. Ke hoʻohālikelike ʻia me nā hemahema triangular, ua nāwaliwali loa ka hopena o nā hemahema lua epitaxial ma nā hiʻohiʻona leakage hope a me nā hiʻohiʻona leakage puka o ka hāmeʻa, me nā ratio degradation o 53% a me 38% pakahi, e like me ka hōʻike ʻana ma ka Papa 4.3. Ma ka ʻaoʻao ʻē aʻe, ʻoi aku ka nui o ka hopena o nā hemahema o ka lua epitaxial ma nā ʻano voltage paepae, nā ʻano conduction diode kino a me ke kūpaʻa ʻoi aku ka nui ma mua o nā hemahema triangular, me ka ratio degradation hiki i 38%.
Ma keʻano laulā, ʻelua mau hemahema morphological, ʻo ia hoʻi nā triangles a me nā lua epitaxial, he hopena koʻikoʻi i ka hāʻule ʻole a me ka hoʻohaʻahaʻa ʻana o nā mea hana SiC MOSFET. ʻO ka loaʻa ʻana o nā hemahema triangular ka mea make loa, me ka nui o ka hemahema e like me 93%, i hōʻike nui ʻia ma ke ʻano he piʻi nui o ka leakage hoʻohuli o ka hāmeʻa. Loaʻa ka haʻahaʻa haʻahaʻa haʻahaʻa o nā mea i loaʻa i ka lua epitaxial defects o 47%. Eia nō naʻe, ʻoi aku ka nui o ka hopena o ka lua epitaxial i ka volta paepae o ka hāmeʻa, nā hiʻohiʻona conduction diode kino a me ke kūpaʻa ma mua o nā kīnā triangular.
Ka manawa hoʻouna: Apr-16-2024