I kēia manawa,kalapona kalapona (SiC)he mea hoʻoheheʻe thermally conductive e aʻo ikaika ʻia ma ka home a ma waho. He kiʻekiʻe loa ka conductivity thermal theoretical o SiC, a hiki i kekahi mau ʻano kristal ke hiki i 270W/mK, ʻo ia ke alakaʻi ma waena o nā mea hana ʻole. No ka laʻana, hiki ke ʻike ʻia ka hoʻohana ʻana o SiC thermal conductivity i nā mea substrate o nā mea semiconductor, kiʻekiʻe thermal conductivity ceramic material, heaters a me nā pā wela no ka hana semiconductor, nā mea capsule no ka wahie nuklea, a me nā apo hoʻopaʻa kinoea no nā pump compressor.
Noi okalapona kalaponama ke kahua semiconductor
ʻO nā disiki wili a me nā mea paʻa he mea hana koʻikoʻi no ka hana wafer silika ma ka ʻoihana semiconductor. Inā hana ʻia ka disc wili i ka hao a i ʻole ke kila kalapona, pōkole kona ola lawelawe a nui kona koena hoʻonui wela. I ka wā o ka hana ʻana i nā wafer silika, ʻoi loa i ka wā o ka wili kiʻekiʻe a i ʻole ka polishing, ma muli o ka ʻaʻahu a me ka deformation thermal o ka disc grinding, paʻakikī ka palahalaha a me ka like o ka wafer silicon ke hōʻoia. ʻO ka disc wili i hana ʻiasilika carbide seramikaHe haʻahaʻa ka ʻaʻahu ma muli o kona paʻakikī kiʻekiʻe, a ʻo kona koena hoʻonui wela ua like nō ia me nā wafers silika, no laila hiki ke hoʻopaʻa ʻia a hoʻoliʻi ʻia i ka wikiwiki.
Eia kekahi, i ka wā e hana ʻia ai nā wafer silika, pono lākou e hoʻomaʻamaʻa i ka wela wela a lawe pinepine ʻia me ka hoʻohana ʻana i ka silicon carbide fixtures. He pale wela lākou a ʻaʻole luku. Hiki ke hoʻohana ʻia ke kalapona e like me ke daimana (DLC) a me nā mea uhi ʻē aʻe ma luna o ka ʻili e hoʻomaikaʻi i ka hana, hoʻēmi i ka pōʻino wafer, a pale i ka palaha ʻana.
Eia kekahi, ma ke ʻano he ʻelele o nā mea semiconductor wide-bandgap kolu o ka hanauna, ʻo ka silicon carbide single crystal material nā waiwai e like me ka laulā bandgap nui (e pili ana i 3 mau manawa o Si), kiʻekiʻe thermal conductivity (e pili ana i 3.3 mau manawa o Si a i ʻole 10 mau manawa. ʻo GaAs), kiʻekiʻe electron saturation migration rate (ma kahi o 2.5 mau manawa o ka Si) a me ke kiʻekiʻe kiʻekiʻe haʻihaʻi uila kahua (ma kahi o 10 mau manawa o Si a i ʻole 5 mau manawa o GaAs). Hoʻopili nā mea SiC i nā hemahema o nā mea hana semiconductor kuʻuna i nā noi kūpono a ke lilo nei i kumu nui o nā semiconductors mana.
Ua hoʻonui nui ʻia ke koi no ka kiʻekiʻe thermal conductivity silicon carbide ceramics
Me ka hoʻomau mau ʻana o ka ʻepekema a me ka ʻenehana, ua piʻi nui ka noi no ka noi ʻana i ka silicon carbide ceramics ma ke kahua semiconductor, a ʻo ka conductivity thermal kiʻekiʻe he hōʻailona koʻikoʻi no kāna noi ʻana i nā mea hana semiconductor. No laila, he mea koʻikoʻi ka hoʻoikaika ʻana i ka noiʻi e pili ana i ke kiʻekiʻe thermal conductivity silicon carbide ceramics. ʻO ka hōʻemi ʻana i ka ʻike o ka oxygen lattice, ka hoʻomaikaʻi ʻana i ka density, a me ka hoʻoponopono kūpono ʻana i ka hāʻawi ʻana i ka lua o ka lua i ka lattice nā ala nui e hoʻomaikaʻi ai i ka conductivity thermal o nā silicon carbide ceramics.
I kēia manawa, he liʻiliʻi nā haʻawina e pili ana i nā seramika silicon carbide kiʻekiʻe ma koʻu ʻāina, a aia nō kahi ākea nui i hoʻohālikelike ʻia me ka pae honua. ʻO nā kuhikuhi noiʻi e hiki mai ana:
● Hoʻoikaika i ka noiʻi kaʻina hana hoʻomākaukau o ka pauka silika carbide ceramic. ʻO ka hoʻomākaukau ʻana i ka pauka silicon carbide kiʻekiʻe-maʻemaʻe, haʻahaʻa-oxygen ke kumu no ka hoʻomākaukau ʻana i nā kiʻekiʻe thermal conductivity silicon carbide ceramics;
● E hoʻoikaika i ke koho ʻana i nā mea kōkua sintering a me ka noiʻi theoretical pili;
●E hoʻoikaika i ka noiʻi a me ka hoʻomohala ʻana i nā mea hana sintering kiʻekiʻe. Ma ka hoʻoponopono ʻana i ke kaʻina hana sintering no ka loaʻa ʻana o kahi microstructure kūpono, he kūlana kūpono ia e loaʻa ai nā kiʻekiʻe thermal conductivity silicon carbide ceramics.
ʻO nā ana e hoʻomaikaʻi ai i ka conductivity wela o ka silika carbide ceramics
ʻO ke kī i ka hoʻomaikaʻi ʻana i ka conductivity thermal o nā seramika SiC ʻo ia ka hoʻohaʻahaʻa ʻana i ka phonon scattering frequency a hoʻonui i ka phonon mean free ala. E hoʻomaikaʻi maikaʻi ʻia ka conductivity thermal o SiC ma o ka hōʻemi ʻana i ka porosity a me ka palena o ka palaoa o nā seramika SiC, e hoʻomaikaʻi i ka maʻemaʻe o nā palena palaoa SiC, e hōʻemi ana i nā haumia lattice SiC a i ʻole nā hemahema lattice, a me ka hoʻonui ʻana i ka lawe kahe kahe wela ma SiC. I kēia manawa, ʻo ka hoʻonui ʻana i ke ʻano a me ka ʻike o nā mea kōkua sintering a me ka mālama wela wela ke kumu nui e hoʻomaikaʻi ai i ka conductivity thermal o nā seramika SiC.
① Hoʻonui i ke ʻano a me ka ʻike o nā mea kōkua sintering
Hoʻohui pinepine ʻia nā mea kōkua sintering i ka wā e hoʻomākaukau ai i nā seramika SiC conductivity thermal kiʻekiʻe. Ma waena o lākou, ʻo ke ʻano a me ka ʻike o nā mea kōkua sintering he hopena nui i ka conductivity thermal o nā seramika SiC. No ka laʻana, hiki ke hoʻoheheʻe ʻia nā mea Al a i ʻole O i loko o ka ʻōnaehana sintering Al2O3 i loko o ka lattice SiC, ka hopena i nā hakahaka a me nā hemahema, e alakaʻi ana i ka hoʻonui ʻana i ka phonon scattering frequency. Eia kekahi, inā he haʻahaʻa ka ʻike o nā mea kōkua sintering, paʻakikī ka mea i ka sinter a me ka densify, ʻoiai ke kiʻekiʻe o nā mea kōkua sintering e alakaʻi i ka hoʻonui ʻana i nā haumia a me nā hemahema. Hiki i nā kōkua hoʻoheheʻe wai nui ke keʻakeʻa i ka ulu ʻana o nā kīʻaha SiC a hōʻemi i ke ala manuahi o nā phonon. No laila, i mea e hoomakaukau kiʻekiʻe thermal conductivity SiC seramics, ia mea e pono e hoemi i ka maʻiʻo o ka sintering kōkua e like me ka hiki i ka wā e hālāwai ai i nā koi o ka sintering density, a ho'āʻo e koho sintering kōkua i paʻakikī e hoʻoheheʻe i loko o ka SiC lattice.
*Nā waiwai wela o nā seramika SiC ke hoʻohui ʻia nā mea kōkua sintering
I kēia manawa, ʻo nā seramika SiC i hoʻopaʻa ʻia me ka BeO ma ke ʻano he kōkua sintering, loaʻa ka nui o ka conductivity thermal wela o ka lumi (270W·m-1·K-1). Eia nō naʻe, ʻo ka BeO kahi mea ʻawaʻawa loa a me ka carcinogenic, a ʻaʻole kūpono ia no ka hoʻohana ākea ʻana i nā laboratories a i ʻole nā ʻoihana ʻoihana. ʻO ka helu haʻahaʻa haʻahaʻa loa o ka Y2O3-Al2O3 ʻōnaehana ʻo 1760 ℃, ʻo ia kahi kōkua sintering wai-phase maʻamau no nā seramika SiC. Eia naʻe, ʻoiai ua maʻalahi ka hoʻoheheʻe ʻia ʻana o Al3+ i loko o ka lattice SiC, i ka wā i hoʻohana ʻia ai kēia ʻōnaehana ma ke ʻano he kōkua sintering, ʻoi aku ka liʻiliʻi o ka conductivity thermal thermal o ka SiC ceramics ma mua o 200W·m-1·K-1.
ʻAʻole hiki ke hoʻoheheʻe ʻia nā mea ʻano honua like ʻole e like me Y, Sm, Sc, Gd a me La i ka lattice SiC a loaʻa ka pilina oxygen kiʻekiʻe, hiki ke hoʻemi pono i ka ʻike oxygen o ka lattice SiC. No laila, ʻo Y2O3-RE2O3 (RE=Sm, Sc, Gd, La) ʻōnaehana he mea kōkua sintering maʻamau no ka hoʻomākaukau ʻana i ka conductivity thermal kiʻekiʻe (>200W·m-1·K-1) SiC ceramics. Ke lawe nei i ka Y2O3-Sc2O3 system sintering aid ma ke ano he la'ana, ua nui ka ion deviation value o Y3+ a me Si4+, a ʻaʻole i loaʻa ka hopena paʻa. He liʻiliʻi ka solubility o Sc ma SiC maʻemaʻe ma 1800 ~ 2600 ℃, ma kahi o (2 ~ 3) × 1017atoms·cm-3.
② Hoʻomaʻamaʻa wela wela
ʻO ka hoʻomaʻamaʻa wela wela o ka SiC ceramics e hoʻopau i nā hemahema lattice, nā dislocations a me nā koena koʻikoʻi, e hoʻoikaika ana i ka hoʻololi ʻana o kekahi mau mea amorphous i nā kristal, a hoʻonāwaliwali i ka hopena phonon. Eia kekahi, hiki i ka hoʻomaʻamaʻa wela wela ke hoʻoikaika maikaʻi i ka ulu ʻana o nā kīʻaha SiC, a hoʻomaikaʻi hope i nā waiwai wela o ka mea. No ka laʻana, ma hope o ka wela wela wela ma 1950 ° C, ua hoʻonui ka thermal diffusion coefficient o SiC ceramics mai 83.03mm2·s-1 a i 89.50mm2·s-1, a ua hoʻonui ʻia ka conductivity thermal o ka lumi mai 180.94W·m. -1·K-1 i 192.17W·m-1·K-1. Hoʻomaikaʻi maikaʻi ka hoʻomaʻamaʻa wela wela i ka hiki ke deoxidation o ke kōkua sintering ma ka ʻili SiC a me ka lattice, a hoʻoikaika i ka pilina ma waena o nā kīʻaha SiC. Ma hope o ka mālama ʻana i ka wela wela, ua hoʻomaikaʻi maikaʻi ʻia ka conductivity thermal thermal o ka SiC ceramics.
Ka manawa hoʻouna: Oct-24-2024