Ka nānā ʻana o nā mea hoʻoheheʻe kiʻiʻoniʻoni lahilahi - nā loina a me nā noi o nā mea hana PECVD/LPCVD/ALD

ʻO ka waiho ʻia ʻana o nā kiʻiʻoniʻoni lahilahi e uhi i kahi papa kiʻiʻoniʻoni ma luna o ka mea substrate nui o ka semiconductor. Hiki ke hana ʻia kēia kiʻiʻoniʻoni me nā mea like ʻole, e like me ka insulating compound silicon dioxide, semiconductor polysilicon, metala keleawe, a me nā mea ʻē aʻe.

Mai ka hiʻohiʻona o ke kaʻina hana semiconductor chip, aia ia ma ke kaʻina hana mua.

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Hiki ke hoʻokaʻawale ʻia ke kaʻina hana hoʻomākaukau kiʻiʻoniʻoni lahilahi i ʻelua mau ʻāpana e like me kāna ʻano hana kiʻiʻoniʻoni: physical vapor deposition (PVD) a me chemical vapor deposition(CVD), i waena o nā mea hana kaʻina hana CVD no ka hapa kiʻekiʻe.

ʻO ka hoʻoheheʻe ʻana o ka mahu kino (PVD) e pili ana i ka vaporization o ka ʻili o ke kumu waiwai a me ka waiho ʻana ma ka ʻili o ka substrate ma o ke kinoea haʻahaʻa haʻahaʻa / plasma, me ka evaporation, sputtering, ion beam, etc.;

ʻO ka waiho ʻana o ka mahu kemika (CVD) pili i ke kaʻina hana o ka waiho ʻana i kahi kiʻiʻoniʻoni paʻa ma ka ʻili o ka wafer silika ma o ka hopena kemika o ka hui kinoea. E like me nā kūlana hopena (pressure, precursor), ua māhele ʻia i ke kaomi lewaCVD(APCVD), kaomi haʻahaʻaCVD(LPCVD), plasma enhanced CVD (PECVD), high density plasma CVD (HDPCVD) a me ka atomic layer deposition (ALD).

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LPCVD: ʻOi aku ka maikaʻi o ka uhi ʻana o ka LPCVD, ka haku mele maikaʻi a me ka hoʻomalu ʻana i ka hale, ka nui o ka waiho ʻana a me ka hoʻopuka ʻana, a e hōʻemi nui i ke kumu o ka pollution particle. ʻO ka hilinaʻi ʻana i nā mea hoʻomehana e like me ke kumu wela e mālama ai i ka hopena, ka mālama ʻana i ka mahana a me ke kaomi kinoea he mea nui loa. Hoʻohana nui ʻia i ka hana ʻana o ka Poly layer o nā kelepona TopCon.

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PECVD: Ke hilinaʻi nei ʻo PECVD i ka plasma i hoʻokumu ʻia e ka hoʻokomo ʻana i ka lekiō no ka loaʻa ʻana o ka mahana haʻahaʻa (emi ma lalo o 450 degere) o ke kaʻina hana hoʻopaʻa kiʻi ʻoniʻoni. ʻO ka haʻahaʻa haʻahaʻa haʻahaʻa kona pono nui, ma laila e mālama ai i ka ikehu, e hōʻemi ana i nā kumukūʻai, e hoʻonui i ka hiki ke hana, a e hōʻemi i ke ola o nā mea lawe liʻiliʻi i nā wafer silika i hoʻokumu ʻia e ka wela kiʻekiʻe. Hiki ke hoʻohana ʻia i nā kaʻina hana o nā cell like ʻole e like me PERC, TOPCON, a me HJT.

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ALD: ʻO ka like ʻana o ke kiʻiʻoniʻoni maikaʻi, ʻoʻoleʻa a me nā lua ʻole, nā hiʻohiʻona o ka uhi ʻana i ka pae maikaʻi, hiki ke lawe ʻia i ka haʻahaʻa haʻahaʻa (ke mahana lumi-400 ℃), hiki ke hoʻomalu pono i ka mānoanoa kiʻiʻoniʻoni, pili nui i nā substrates o nā ʻano like ʻole, a ʻaʻole pono e hoʻomalu i ka like ʻole o ka kahe reactant. Akā ʻo ka hemahema ʻo ia ka wikiwiki o ka hoʻokumu ʻana o ke kiʻiʻoniʻoni. E like me ka zinc sulfide (ZnS) i hoʻohana ʻia no ka hana ʻana i nā insulators nanostructured (Al2O3/TiO2) a me nā hōʻike electroluminescent kiʻiʻoniʻoni lahilahi (TFEL).

ʻO ka hoʻoheheʻe ʻana o ka papa atomika (ALD) kahi kaʻina hana hoʻoheheʻe ʻia e hana i kahi kiʻiʻoniʻoni ʻoniʻoni ma ka ʻili o kahi papa substrate ma ka papa ma ke ʻano o kahi papa atomika hoʻokahi. I ka hoʻomaka ʻana o 1974, ua hoʻomohala ʻo Tuomo Suntola i ka ʻenehana mea Finnish i kēia ʻenehana a lanakila i ka 1 miliona euro Millennium Technology Award. Ua hoʻohana mua ʻia ka ʻenehana ALD no nā hōʻike electroluminescent pālahalaha, akā ʻaʻole i hoʻohana nui ʻia. ʻAʻole hiki i ka hoʻomaka ʻana o ke kenekulia 21 i hoʻomaka ʻia ka ʻenehana ALD e ka ʻoihana semiconductor. Ma ka hana ʻana i nā mea kiʻekiʻe-dielectric ultra-thin e hoʻololi i ka silicon oxide kuʻuna, ua hoʻoponopono maikaʻi ʻia ka pilikia leakage o kēia manawa ma muli o ka hōʻemi ʻana o ka laulā laina o nā transistors hopena kahua, e koi ana i ke kānāwai o Moore e hoʻomohala hou i nā laula laina liʻiliʻi. Ua ʻōlelo mua ʻo Kauka Tuomo Suntola hiki i ka ALD ke hoʻonui nui i ka nui o ka hoʻohui ʻana o nā ʻāpana.

Hōʻike ka ʻikepili lehulehu i ka ʻenehana ALD i hana ʻia e Dr. Tuomo Suntola o PICOSUN ma Finland ma 1974 a ua hana ʻia i nā ʻāina ʻē, e like me ke kiʻi kiʻi dielectric kiʻekiʻe i ka chip 45/32 nanometer i hoʻomohala ʻia e Intel. Ma Kina, ua hoʻokomo koʻu ʻāina i ka ʻenehana ALD ma mua o 30 mau makahiki ma mua o nā ʻāina ʻē. I ʻOkakopa 2010, ua mālama ʻo PICOSUN ma Finland a me ke Kulanui ʻo Fudan i ka hālāwai hoʻololi hoʻonaʻauao mua ALD kūloko, e hoʻolauna ana i ka ʻenehana ALD i Kina no ka manawa mua.
Hoʻohālikelike ʻia me ka waiho ʻana o ka mahu kemika kuʻuna (CVD) a me ka hoʻoheheʻe ʻana o ka mahu kino (PVD), ʻo nā mea maikaʻi o ka ALD ʻo ia ka conformality ʻekolu-dimensional maikaʻi, ka like ʻana o ke kiʻi ʻāpana nui, a me ka mana mānoanoa pololei, i kūpono no ka ulu ʻana i nā kiʻiʻoniʻoni ultra-thin ma nā ʻano o ka ʻili paʻakikī a me nā ʻano hiʻona kiʻekiʻe.

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—Ke kumu ʻikepili: kahua hoʻoponopono micro-nano o ke Kulanui ʻo Tsinghua—
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I ka wā ma hope o Moore, ua hoʻomaikaʻi maikaʻi ʻia ka paʻakikī a me ke kaʻina hana o ka hana wafer. ʻO ka lawe ʻana i nā pahu logic ma ke ʻano he laʻana, me ka hoʻonui ʻana i ka nui o nā laina hana me nā kaʻina hana ma lalo o 45nm, ʻoi aku ka nui o nā laina hana me nā kaʻina hana o 28nm a ma lalo, ʻoi aku ka kiʻekiʻe o nā koi no ka uhi ʻana i ka mānoanoa a me ka mana precision. Ma hope o ka hoʻokomo ʻia ʻana o ka ʻenehana hōʻike lehulehu, ua hoʻonui nui ʻia ka helu o nā kaʻina hana ALD a me nā mea pono; ma ke kahua o nā pahu hoʻomanaʻo, ua ulu ka hana hana nui mai 2D NAND a i 3D NAND structure, ua hoʻomau ka nui o nā papa o loko, a ua hōʻike mālie nā ʻāpana i nā kiʻekiʻe kiʻekiʻe, kiʻekiʻe aspect ratio structures, a me ke kuleana nui o ALD ua hoʻomaka e puka mai. Mai ka hiʻohiʻona o ka hoʻomohala ʻana o nā semiconductor i ka wā e hiki mai ana, e pāʻani ana ka ʻenehana ALD i kahi kuleana koʻikoʻi i ka wā post-Moore.

No ka laʻana, ʻo ALD wale nō ka ʻenehana deposition hiki ke hoʻokō i ka uhi a me nā koi hoʻokō kiʻiʻoniʻoni o nā hale hoʻonohonoho 3D paʻakikī (e like me 3D-NAND). Hiki ke ʻike maopopo ʻia kēia ma ke kiʻi ma lalo nei. ʻO ke kiʻiʻoniʻoni i waiho ʻia ma CVD A (uliuli) ʻaʻole uhi piha i ka ʻāpana haʻahaʻa o ka hale; ʻoiai inā e hana ʻia kekahi mau hoʻololi kaʻina i CVD (CVD B) e hoʻokō i ka uhi, ʻo ka hana kiʻiʻoniʻoni a me ka haku mele ʻana o ka ʻāpana o lalo he ʻilihune loa (kahi keʻokeʻo ma ke kiʻi); ʻokoʻa, ʻo ka hoʻohana ʻana i ka ʻenehana ALD e hōʻike i ka uhi kiʻiʻoniʻoni piha, a loaʻa nā waiwai kiʻiʻoniʻoni kiʻekiʻe a me nā ʻano like ʻole ma nā wahi āpau o ka hale.

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—-Picture Pōmaikaʻi o ka ʻenehana ALD i hoʻohālikelike ʻia me CVD (Source: ASM)—-

ʻOiai ke noho mau nei ʻo CVD i ka māhele mākeke nui loa i ka wā pōkole, ua lilo ʻo ALD i hoʻokahi o ka wikiwiki o ka ulu ʻana o ka mākeke wafer fab. Ma kēia mākeke ALD me ka hiki ke ulu nui a me ke kuleana koʻikoʻi i ka hana chip, ʻo ASM kahi ʻoihana alakaʻi ma ke kahua o nā lako ALD.

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Ka manawa hoʻouna: Iune-12-2024
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