Kamfaninmu yana ba da sabis na tsarin aikin SiC ta hanyar CVD akan saman graphite, yumbu da sauran kayan, don haka iskar gas na musamman da ke ɗauke da carbon da silicon suna amsawa a babban zafin jiki don samun ƙwayoyin SiC masu tsabta, ƙwayoyin da aka ajiye akan saman kayan da aka rufe, kafa SIC kariya Layer.
Babban fasali:
1. High zafin jiki oxidation juriya:
juriya na iskar oxygen har yanzu yana da kyau sosai lokacin da zafin jiki ya kai 1600 C.
2. Babban tsarki: sanya ta hanyar tururin sinadarai a ƙarƙashin yanayin chlorination mai zafi.
3. Juriya juriya: babban taurin, m surface, lafiya barbashi.
4. Lalata juriya: acid, alkali, gishiri da kuma Organic reagents.
Babban Takaddun Shafi na CVD-SIC:
SiC-CVD Properties | ||
Tsarin Crystal | FCC β lokaci | |
Yawan yawa | g/cm ³ | 3.21 |
Tauri | Vickers taurin | 2500 |
Girman hatsi | μm | 2 ~ 10 |
Tsaftar Sinadari | % | 99.99995 |
Ƙarfin zafi | J · kg-1· K-1 | 640 |
Zazzabi Sublimation | ℃ | 2700 |
Ƙarfin Felexural | MPa (RT 4-maki) | 415 |
Modul na Young | Gpa (4pt lankwasa, 1300 ℃) | 430 |
Ƙarfafa Ƙarfafawa (CTE) | 10-6K-1 | 4.5 |
Ƙarfafawar thermal | (W/mK) | 300 |
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