Rufin SiC/Rufaffen Zane/Tray don Semiconductor

Rufin SiC/Rufaffen Zane/Tray don Hoton da Aka Fitar da Semiconductor

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VET Energy SiC Mai Rufin Graphite Susceptor don Ci gaban Epitaxial samfuri ne mai girma wanda aka ƙera don samar da daidaito da ingantaccen aiki na tsawon lokaci. Yana da kyakkyawan juriya na zafi mai kyau da daidaituwa na thermal, babban tsabta, juriya na yashwa, yana mai da shi cikakkiyar bayani don aikace-aikacen sarrafa wafer.

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Tags samfurin

SiC shafi/mai rufi na Graphite susceptor don Semiconductor

TheSiC Mai Rufin Graphite Substratebayani ne mai ɗorewa da inganci wanda aka tsara don biyan buƙatun masana'antar sarrafa semiconductor. Yana nuna wani Layer na babban-tsarkisilicon carbide (SiC) shafi, Wannan substrate yana ba da kwanciyar hankali na thermal na musamman, juriya na iskar shaka, da kuma tsawon rayuwar sabis, yana mai da shi manufa don aikace-aikace a cikin matakai na MOCVD, masu ɗaukar hoto na graphite, da sauran yanayin zafi mai zafi.

Siffofin:
· Kyakkyawan Juriya na Shock Thermal
· Kyakkyawan juriya na girgiza jiki
· Kyakkyawan Juriya na Chemical
· Super High Tsafta
· Samuwar a cikin Siffar Maɗaukaki
Ana iya amfani da shi a ƙarƙashin Oxidizing Atmosphere

Aikace-aikace:

Halayen Samfur da Fa'idodi:

1. Mafi Girma Juriya:Tare da high-tsarkiSiC shafi, Substrate yana jure matsanancin yanayin zafi, yana tabbatar da daidaiton aiki a cikin yanayin da ake buƙata kamar ƙirar epitaxy da ƙirar semiconductor.

2. Ingantacciyar Dorewa:An ƙera abubuwan haɗin graphite masu rufin SiC don tsayayya da lalata sinadarai da iskar shaka, yana ƙara tsawon rayuwar ma'auni idan aka kwatanta da daidaitattun abubuwan graphite.

3. Vitreous Rufi Graphite:The musamman vitreous tsarin naSiC shafiyana ba da kyakkyawan taurin saman ƙasa, rage lalacewa da tsagewa yayin sarrafa yanayin zafi.

4. Babban Tsarkake SiC Coating:Substrate ɗinmu yana tabbatar da ƙarancin gurɓatawa a cikin matakai masu mahimmanci na semiconductor, yana ba da aminci ga masana'antu waɗanda ke buƙatar tsaftataccen kayan abu.

5. Faɗin Kasuwa Application:TheSiC mai rufin graphite susceptorkasuwa yana ci gaba da haɓaka yayin da buƙatun samfuran samfuran SiC masu rufi a cikin masana'antar semiconductor ke ƙaruwa, sanya wannan mahimmin ɗan wasa a matsayin babban ɗan wasa a cikin kasuwar jigilar kaya mai graphite da kasuwar silikon carbide mai rufin graphite.

Abubuwan Haɓaka na Kayan Gilashin Gindi:

Yawaita Bayyana:	1.85 g/cm 3
Juriya na Lantarki:	11 μΩm
Ƙarfin Ƙarfi:	49 MPa (500kgf/cm2)
Taurin Teku:	58
Ash:	<5ppm
Ƙarfafa Ƙarfafawa:	116 W/mK (100 kcal/mhr-℃)

CVD SiC薄膜基本物理性能 Asalin kaddarorin jiki na CVD SiCshafi
性质 / Dukiya	典型数值 / Ƙimar Taimako
晶体结构 / Crystal Structure	FCC β lokaci 多晶，主要为（111）取向
密度 / Yawan yawa	3.21g/cm³
硬度 / Hardness	2500 维氏硬度 (500g kaya)
晶粒大小 / Hatsi SiZe	2 ~ 10 μm
纯度 / Sinadaran Tsabta	99.99995%
热容 / Ƙarfin Zafi	640kg^-1· K^-1
升华温度 / Sublimation Temperature	2700 ℃
抗弯强度 / Ƙarfin Ƙarfi	415 MPa RT 4-point
杨氏模量 / Young's Modul	430 Gpa 4pt lankwasa, 1300 ℃
导热系数 / Thermal Conductivity	300 w·m^-1· K^-1
热膨胀系数 / Thermal Expansion(CTE)	4.5×10^-6K^-1

VET Energy shine ainihin masana'anta na samfuran graphite na musamman da samfuran silicon carbide tare da sutura daban-daban kamar suturar SiC, murfin TaC, murfin carbon gilashi, murfin carbon pyrolytic, da sauransu, na iya samar da sassa daban-daban na musamman don semiconductor da masana'antar hotovoltaic.

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