The incredibly arziƙi ayyukan gudanarwa gwaninta da mutum zuwa 1 sabis model sa gagarumin muhimmancin sadarwar kungiya da kuma mu sauki fahimtar da tsammanin for Professional China China Sic Boat ɗauke da Silicon Wafers a cikin Babban Zazzabi Rufe Rufin Tanderu Tube, Our matuƙar manufa shi ne ko da yaushe. don yin matsayi a matsayin babban alama da kuma jagoranci a matsayin majagaba a fagenmu. Muna da tabbacin ƙwarewarmu mai amfani a cikin ƙirƙirar kayan aiki za ta sami amincewar abokin ciniki, Ina son yin aiki tare da ƙirƙirar mafi kyawun lokaci mai tsawo tare da ku!
Ƙwarewar ayyukan gudanarwa mai ban sha'awa mai ban sha'awa da kuma samfurin sabis na mutum zuwa 1 suna ba da mahimmancin mahimmancin sadarwar ƙungiya da sauƙin fahimtarmu game da tsammanin ku donKasar Sin ta dauki Silicon Wafers, Polycrystallie Silicon Wafer, Maraba da duk wani tambayoyinku da damuwa don samfuranmu. Muna sa ran kafa dangantakar kasuwanci ta dogon lokaci tare da ku nan gaba kadan. Tuntube mu a yau. Mu ne abokin kasuwanci na farko don dacewa da bukatun ku!
SamfuraDrubutawa
Silicon carbide Wafer Boat ana amfani da ko'ina azaman mariƙin wafer a cikin tsarin yaduwar zafin jiki mai girma.
Amfani:
Babban juriya na zafin jiki:al'ada amfani a 1800 ℃
High thermal watsin:daidai da kayan graphite
Babban taurin:taurin na biyu bayan lu'u-lu'u, boron nitride
Juriya na lalata:acid mai karfi da alkali ba su da lalata gare shi, juriya na lalata ya fi tungsten carbide da alumina kyau.
Hasken nauyi:ƙananan yawa, kusa da aluminum
Babu nakasawa: low coefficient na thermal fadadawa
Thermal girgiza juriya:zai iya jure kaifi canje-canje na zafin jiki, tsayayya da zafin zafi, kuma yana da ingantaccen aiki
Abubuwan Jiki Na SiC
Dukiya | Daraja | Hanya |
Yawan yawa | 3.21 g/c | Nitse-tasowa da girma |
Musamman zafi | 0.66 J/g °K | Filashin Laser mai ƙwanƙwasa |
Ƙarfin sassauƙa | 450 MPa 560 MPa | Lankwasa maki 4, lanƙwasa maki RT4, 1300° |
Karya tauri | 2.94MPa m1/2 | Microindentation |
Tauri | 2800 | Vickers, 500 g na kaya |
Elastic ModulusYoung's Modulus | 450 GPA430 | 4 pt lanƙwasa, RT4 pt lanƙwasa, 1300 °C |
Girman hatsi | 2-10 m | SEM |
Abubuwan da aka bayar na thermal na SiC
Thermal Conductivity | 250 W/m °K | Hanyar filasha Laser, RT |
Ƙarfafa Ƙarfafawa (CTE) | 4.5 x 10-6 °K | Yanayin zafin jiki zuwa 950 ° C, silica dilatometer |