The crystal girma makera ne core kayan aiki gasiliki carbidecrystal girma. Yana kama da tanderun girma na siliki na gargajiya na crystalline. Tsarin tanderun ba shi da wahala sosai. An yafi hada da tanderun jiki, dumama tsarin, coil watsa inji, injin saye da auna tsarin, gas hanya tsarin, sanyaya tsarin, kula da tsarin, da dai sauransu The thermal filin da tsari yanayi ƙayyade key Manuniya nasilicon carbide crystalkamar inganci, girman, gudanarwa da sauransu.
A daya hannun, da yawan zafin jiki a lokacin girma nasilicon carbide crystalyana da girma sosai kuma ba za a iya sa ido ba. Saboda haka, babban wahala yana cikin tsarin kanta. Manyan matsalolin sune kamar haka:
(1) Wahala wajen sarrafa filin zafi:
Saka idanu na rufaffiyar babban yanayin zafi yana da wahala kuma ba a iya sarrafawa. Daban-daban daga al'ada silicon-tushen bayani kai tsaye-ja crystal girma kayan aiki tare da wani babban mataki na aiki da kai da kuma lura da kuma controllable crystal girma tsari, silicon carbide lu'ulu'u girma a cikin wani rufaffiyar sarari a high-zazzabi yanayi sama da 2,000 ℃, da kuma girma zafin jiki. yana buƙatar sarrafawa daidai lokacin samarwa, wanda ke sa sarrafa zafin jiki mai wahala;
(2) Wahala wajen sarrafa nau'in crystal:
Micropipes, polymorphic inclusions, dislocations da sauran lahani suna da wuyar faruwa a yayin tsarin ci gaba, kuma suna tasiri da haɓaka juna. Micronpipes (MP) lahani ne ta nau'in tare da girman microns da yawa zuwa dubun microns, waɗanda lahani ne na na'urori. Silicon carbide guda lu'ulu'u sun haɗa da nau'ikan kristal sama da 200 daban-daban, amma ƴan sifofi kaɗan ne kawai (nau'in 4H) sune kayan semiconductor da ake buƙata don samarwa. Canjin nau'in kristal yana da sauƙin faruwa yayin aiwatar da haɓaka, yana haifar da lahani na haɗa polymorphic. Saboda haka, ya zama dole don sarrafa daidaitattun sigogi kamar rabon silicon-carbon, gradient zafin girma, ƙimar girma na crystal, da matsa lamba na iska. Bugu da kari, akwai wani zafin jiki gradient a cikin thermal filin silicon carbide guda crystal girma, wanda take kaiwa zuwa 'yan qasar ciki danniya da kuma sakamakon dislocations (basal jirgin sama dislocation BPD, dunƙule dislocation TSD, gefen dislocation TED) a lokacin da crystal girma tsari, game da shi. yana shafar inganci da aikin epitaxy da na'urori masu zuwa.
(3) Wahalar sarrafa abubuwan kara kuzari:
Gabatarwar ƙazanta na waje dole ne a sarrafa shi sosai don samun kristal mai gudanarwa tare da doping na jagora;
(4) Yawan girma a hankali:
Yawan ci gaban silicon carbide yana da sannu a hankali. Kayan siliki na al'ada suna buƙatar kwanaki 3 kawai don girma zuwa sandar lu'ulu'u, yayin da sandunan kristal silicon na buƙatar kwanaki 7. Wannan yana haifar da ƙarancin samarwa ta halitta na siliki carbide da ƙarancin fitarwa.
A gefe guda, ma'auni na ci gaban epitaxial na silicon carbide yana da matuƙar buƙata, gami da ƙarancin iska na kayan aiki, kwanciyar hankali na iskar gas a cikin ɗakin amsawa, daidaitaccen iko na lokacin gabatarwar gas, daidaiton iskar gas. rabo, da kuma tsananin kula da yawan zafin jiki. Musamman, tare da haɓaka matakin juriya na na'urar, wahalar sarrafa mahimman sigogi na wafer epitaxial ya karu sosai. Bugu da ƙari, tare da karuwa a cikin kauri na epitaxial Layer, yadda za a sarrafa daidaitattun daidaito na resistivity da kuma rage yawan lahani yayin da tabbatar da kauri ya zama wani babban kalubale. A cikin tsarin sarrafa wutar lantarki, ya zama dole don haɗa manyan na'urori masu auna firikwensin da masu kunnawa don tabbatar da cewa sigogi daban-daban na iya zama daidai da daidaitacce. A lokaci guda kuma, haɓakawa na sarrafa algorithm yana da mahimmanci. Yana buƙatar samun damar daidaita dabarun sarrafawa a cikin ainihin lokaci bisa ga siginar amsawa don daidaitawa da canje-canje daban-daban a cikin tsarin ci gaban silicon carbide epitaxial.
Babban matsaloli asilicon carbide substratemasana'antu:
Lokacin aikawa: Juni-07-2024