Ƙarni na farko na kayan semiconductor ana wakilta ta silicon (Si) da germanium (Ge), waɗanda sune tushen haɗaɗɗun masana'anta. Ana amfani da su ko'ina a cikin ƙananan ƙarfin lantarki, ƙananan mita, da ƙananan wutar lantarki da masu ganowa. Fiye da 90% na samfuran semiconductor An yi su ne da kayan tushen silicon;
Abubuwan semiconductor na ƙarni na biyu suna wakiltar gallium arsenide (GaAs), indium phosphide (InP) da gallium phosphide (GaP). Idan aka kwatanta da na'urorin da aka yi amfani da su na siliki, suna da maɗaukakiyar mitoci da manyan kaddarorin optoelectronic kuma ana amfani da su sosai a fagen optoelectronics da microelectronics. ;
Ƙarni na uku na kayan semiconductor ana wakilta ta kayan aiki masu tasowa kamar silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), lu'u-lu'u (C), da aluminum nitride (AlN).
Silicon carbidemuhimmin abu ne na asali don haɓaka masana'antar semiconductor na ƙarni na uku. Na'urorin wutar lantarki na Silicon carbide na iya dacewa da ingantaccen inganci, ƙarami da buƙatun nauyi na tsarin lantarki tare da kyakkyawan juriya mai ƙarfi, juriya mai zafi, ƙarancin asara da sauran kaddarorin.
Saboda mafi girman kaddarorinsa na zahiri: babban rata na band (daidai da babban fashewar filin lantarki da ƙarfin ƙarfin ƙarfi), haɓakar wutar lantarki mai ƙarfi, da haɓakar thermal, ana tsammanin ya zama kayan yau da kullun da aka fi amfani dasu don yin kwakwalwan kwamfuta na semiconductor a nan gaba. . Musamman a fagen sabbin motocin makamashi, samar da wutar lantarki na hotovoltaic, zirga-zirgar jiragen kasa, grid mai kaifin baki da sauran filayen, yana da fa'ida a bayyane.
Tsarin samar da SiC ya kasu kashi uku manyan matakai: SiC single crystal girma, epitaxial Layer girma da kuma na'ura masana'antu, wanda yayi dace da hudu manyan links na masana'antu sarkar:substrate, epitaxy, na'urori da kayayyaki.
Hanyar da aka fi amfani da ita na masana'anta na farko yana amfani da hanyar sublimation tururi ta jiki don ƙaddamar da foda a cikin yanayi mai zafi mai zafi, da girma lu'ulu'u na silicon carbide a saman kristal iri ta hanyar sarrafa filin zafin jiki. Yin amfani da wafer na silikon carbide a matsayin maɗaukaki, ana amfani da jigon tururin sinadari don saka wani Layer na crystal ɗaya akan wafer don samar da wafer epitaxial. Daga cikin su, girma wani silicon carbide epitaxial Layer a kan wani conductive silicon carbide substrate za a iya sanya a cikin ikon na'urorin, wanda aka yafi amfani a lantarki motocin, photovoltaics da sauran filayen; girma gallium nitride epitaxial Layer a kan wani yanki mai rufewasilicon carbide substrateza a iya ƙara zama na'urorin mitar rediyo, ana amfani da su a cikin sadarwar 5G da sauran fannoni.
A yanzu, siliki carbide substrates suna da mafi girman shingen fasaha a cikin sarkar masana'antar siliki, kuma siliki carbide substrates sune mafi wahalar samarwa.
Ba a warware matsalar samar da SiC gaba daya ba, kuma ingancin ginshiƙan ginshiƙan kristal ba su da ƙarfi kuma akwai matsalar yawan amfanin ƙasa, wanda ke haifar da tsadar kayan aikin SiC. Yana ɗaukar matsakaita na kwanaki 3 kawai don kayan siliki suyi girma zuwa sandar lu'ulu'u, amma yana ɗaukar mako guda don sandar siliki carbide crystal. Babban sandar siliki na kristal na iya girma tsayin 200cm, amma sandar siliki carbide kristal ba zai iya girma kawai 2cm ba. Bugu da ƙari, SiC kanta abu ne mai wuya kuma mai gatsewa, kuma wafers ɗin da aka yi da shi suna da saurin yankewa yayin amfani da yankan yankan wafer dicing na gargajiya, wanda ke shafar yawan amfanin ƙasa da amincin. SiC substrates sun bambanta sosai da ingots silicon na gargajiya, kuma komai daga kayan aiki, matakai, sarrafawa zuwa yankan yana buƙatar haɓaka don sarrafa silicon carbide.
Sarkar masana'antar siliki carbide an raba shi zuwa manyan hanyoyin haɗin gwiwa guda huɗu: substrate, epitaxy, na'urori da aikace-aikace. Abubuwan da ake amfani da su sune tushe na sarkar masana'antu, kayan epitaxial sune mabuɗin kera na'urori, na'urori sune tushen sarkar masana'antu, kuma aikace-aikacen sune tushen haɓaka masana'antu. Masana'antu na sama suna amfani da albarkatun ƙasa don yin kayan ƙasa ta hanyar hanyoyin haɓaka tururi ta jiki da sauran hanyoyin, sannan kuma suna amfani da hanyoyin tara tururi da sauran hanyoyin don haɓaka kayan epitaxial. Masana'antar tsakiyar ruwa tana amfani da kayan sama don kera na'urorin mitar rediyo, na'urorin wuta da sauran na'urori, waɗanda a ƙarshe ana amfani da su a cikin hanyoyin sadarwa na 5G. , motocin lantarki, sufurin jirgin kasa, da dai sauransu. Daga cikinsu, substrate da epitaxy suna da kashi 60% na farashin sarkar masana'antu kuma sune babban darajar sarkar masana'antu.
SiC Substrate: SiC lu'ulu'u galibi ana kera su ta amfani da hanyar Lely. Kayayyakin yau da kullun na ƙasa da ƙasa suna canzawa daga inci 4 zuwa inci 6, kuma an ƙirƙira samfuran ƙwanƙwasa inch 8. Abubuwan da ke cikin gida sun fi inci 4 ne. Tun da yake ana iya haɓaka layukan samar da wafer na siliki 6-inch da kuma canza su don samar da na'urorin SiC, babban rabon kasuwa na 6-inch SiC substrates za a kiyaye na dogon lokaci.
Tsarin siliki carbide substrate yana da rikitarwa kuma yana da wahalar samarwa. Silicon carbide substrate wani fili semiconductor guda crystal abu hada da abubuwa biyu: carbon da silicon. A halin yanzu, masana'antu yafi amfani da high-tsarki carbon foda da high-tsarki silicon foda a matsayin albarkatun kasa don hada silicon carbide foda. A ƙarƙashin filin zafin jiki na musamman, ana amfani da balagagge hanyar watsa tururi ta jiki (hanyar PVT) don shuka silicon carbide mai girma dabam a cikin tanderun girma. A ƙarshe an sarrafa ingot ɗin crystal, yanke, ƙasa, gogewa, tsaftacewa da sauran matakai masu yawa don samar da siliki carbide substrate.
Lokacin aikawa: Mayu-22-2024