Gabatarwa naSilicon Carbide
Silicon carbide (SIC) yana da yawa na 3.2g/cm3. Silikon carbide na halitta abu ne mai wuyar gaske kuma galibi ana haɗa shi ta hanyar wucin gadi. Dangane da rarrabuwa daban-daban na tsarin crystal, silicon carbide za a iya raba kashi biyu: α SiC da β SiC. Semiconductor na ƙarni na uku wanda aka wakilta ta silicon carbide (SIC) yana da mitar mita, babban inganci, babban ƙarfi, juriya mai ƙarfi, juriya mai zafi da ƙarfi mai ƙarfi. Ya dace da manyan buƙatun dabarun kiyaye makamashi da rage fitar da hayaki, masana'antu na fasaha da tsaro na bayanai. Yana da don tallafawa haɓaka mai zaman kanta da haɓakawa da canza sabbin hanyoyin sadarwar wayar hannu, sabbin motocin makamashi, jiragen ƙasa masu sauri, Intanet mai ƙarfi da sauran masana'antu Abubuwan da aka haɓaka da kayan aikin lantarki da kayan aikin lantarki sun zama abin da ke mayar da hankali ga fasahar semiconductor na duniya da gasar masana'antu. . A shekarar 2020, tsarin tattalin arziki da cinikayya na duniya yana cikin wani lokaci na yin gyare-gyare, kuma yanayin ciki da waje na tattalin arzikin kasar Sin ya fi rikitarwa da tsanani, amma masana'antar sarrafa na'urorin zamani na zamani ta uku a duniya tana ci gaba da samun bunkasuwa sabanin yanayin da ake ciki. Ya kamata a gane cewa masana'antar siliki ta silicon ta shiga wani sabon mataki na ci gaba.
Silicon carbideaikace-aikace
Aikace-aikacen silicon carbide a cikin masana'antar semiconductor silicon carbide semiconductor masana'antar sarkar, galibi ya haɗa da silicon carbide babban foda mai tsabta, ƙwayar kristal ɗaya, epitaxial, na'urar wutar lantarki, marufi da aikace-aikacen m, da sauransu.
1. Single crystal substrate ne goyon bayan kayan, conductive abu da epitaxial girma substrate na semiconductor. A halin yanzu, hanyoyin haɓaka na SiC guda kristal sun haɗa da canja wurin iskar gas ta jiki (PVT), lokaci mai ruwa (LPE), ƙimar tururin sinadarai mai zafin jiki (htcvd) da sauransu. 2. Epitaxial silicon carbide epitaxial sheet yana nufin haɓakar fim ɗin kristal guda ɗaya (epitaxial Layer) tare da wasu buƙatu da daidaitaccen daidaitawa kamar substrate. A cikin aikace-aikacen aikace-aikacen, na'urori masu fa'ida mai faffadan rata na semiconductor kusan duka suna kan Layer epitaxial, kuma guntuwar siliki carbide da kansu ana amfani da su azaman kayan maye ne kawai, gami da Gan epitaxial layers.
3. tsarkin tsarkiSiCfoda shine albarkatun kasa don haɓakar silicon carbide guda crystal ta hanyar PVT. Tsaftar samfurin sa kai tsaye yana shafar ingancin girma da kaddarorin lantarki na SiC guda crystal.
4. na'urar wutar lantarki an yi shi da silicon carbide, wanda ke da halaye na juriya na zafin jiki, mita mai yawa da inganci. Dangane da tsarin aikin na'urar,SiCna'urorin wutar lantarki sun haɗa da diodes wuta da bututun wutar lantarki.
5. a cikin aikace-aikacen semiconductor na ƙarni na uku, fa'idodin aikace-aikacen ƙarshe shine cewa za su iya cika GaN semiconductor. Saboda fa'idodin ingantaccen juzu'i, ƙananan halaye masu dumama da nauyi na na'urorin SiC, buƙatar masana'antar ƙasa ta ci gaba da ƙaruwa, wanda ke da yanayin maye gurbin na'urorin SiO2. Halin da ake ciki na ci gaban kasuwar silikon carbide yana ci gaba da haɓakawa. Silicon carbide yana jagorantar aikace-aikacen kasuwar haɓaka semiconductor na ƙarni na uku. An shigar da samfuran semiconductor na ƙarni na uku cikin sauri, filayen aikace-aikacen suna haɓaka ci gaba, kuma kasuwa tana haɓaka cikin sauri tare da haɓaka kayan lantarki na mota, sadarwar 5g, samar da wutar lantarki mai sauri da aikace-aikacen soja. .
Lokacin aikawa: Maris 16-2021