Samuwar silicon dioxide a saman siliki ana kiransa iskar shaka, kuma ƙirƙirar silicon dioxide mai ƙarfi da ƙarfi ya haifar da haifuwar fasahar siliki mai haɗaɗɗun tsarin kewayawa. Ko da yake akwai hanyoyi da yawa don shuka silicon dioxide kai tsaye a saman siliki, yawanci ana yin shi ta hanyar iskar oxygenation na thermal, wanda shine don fallasa silicon zuwa yanayin da ke haifar da yanayin zafi mai zafi (oxygen, ruwa). Hanyoyin oxidation na thermal na iya sarrafa kauri na fim da halayen haɗin siliki / silicon dioxide yayin shirye-shiryen fina-finai na silicon dioxide. Sauran dabarun haɓaka silicon dioxide sune anodization na plasma da kuma rigar anodization, amma ba ɗayan waɗannan fasahohin da aka yi amfani da su sosai a cikin ayyukan VLSI.
Silicon yana nuna hali don samar da siliki dioxide barga. Idan silica da aka fakuce da ita zuwa wani yanayi mai oxidizing (kamar oxygen, ruwa), zai samar da sirin oxide na bakin ciki sosai (<20Å) ko da a cikin zafin jiki. Lokacin da aka fallasa siliki zuwa yanayin oxidizing a babban zafin jiki, za a samar da Layer oxide mai kauri a cikin sauri. Ainihin tsarin samar da silicon dioxide daga siliki an fahimta sosai. Deal and Grove sun ɓullo da samfurin lissafi wanda ya bayyana daidai ƙarfin ci gaban fina-finan oxide fiye da 300Å. Sun ba da shawarar cewa ana aiwatar da iskar oxygen ta hanyar da ta biyo baya, wato, oxidant (kwayoyin ruwa da kwayoyin oxygen) suna yaduwa ta hanyar Layer oxide na yanzu zuwa cibiyar Si / SiO2, inda oxidant ke amsawa da silicon don samar da silicon dioxide. Babban abin da ya faru don samar da silicon dioxide an bayyana shi kamar haka:
Halin oxyidation yana faruwa a Si/SiO2 dubawa, don haka lokacin da oxide Layer girma, silicon yana ci gaba da cinyewa kuma a hankali mahallin yana mamaye silicon. Dangane da ma'auni mai yawa da nauyin kwayoyin halitta na silicon da silicon dioxide, ana iya gano cewa siliki da aka cinye don kauri na Layer oxide na ƙarshe shine 44%. Ta wannan hanyar, idan Layer oxide ya girma 10,000Å, 4400Å na silicon za a cinye. Wannan dangantakar tana da mahimmanci don ƙididdige tsayin matakan da aka kafa akansiliki siliki. Matakan sune sakamakon nau'ikan oxidation daban-daban a wurare daban-daban akan farfajiyar wafer silicon.
Har ila yau, muna ba da samfuran graphite mai tsabta da silicon carbide, waɗanda ake amfani da su sosai wajen sarrafa wafer kamar oxidation, yaduwa, da annealing.
Maraba da kowane abokin ciniki daga ko'ina cikin duniya don ziyartar mu don ƙarin tattaunawa!
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Lokacin aikawa: Nuwamba-13-2024