Ana buƙatar wasu sinadarai na ƙwayoyin cuta da ƙwayoyin cuta don shiga cikin masana'antar semiconductor. Bugu da ƙari, tun da kullum ana aiwatar da tsari a cikin ɗaki mai tsabta tare da sa hannu na mutum, semiconductorwafersbabu makawa sun gurbata da kazanta iri-iri.
Bisa ga tushe da yanayin gurɓatattun, ana iya raba su kusan zuwa nau'i hudu: barbashi, kwayoyin halitta, ions karfe da oxides.
1. Barbasa:
Barbashi yawanci wasu polymers, photoresists da etching impurities.
Irin waɗannan gurɓatattun abubuwa galibi suna dogara ne da ƙungiyoyin intermolecular don haɗawa a saman wafer, suna shafar samuwar adadi na geometric da sigogin lantarki na aikin photolithography na na'urar.
Irin waɗannan gurɓatattun ana cire su ne ta hanyar rage hulɗar su a hankali tare da samanwaferta hanyoyin jiki ko sinadarai.
2. Kwayoyin halitta:
Tushen ƙazantattun kwayoyin halitta suna da faɗi da yawa, kamar man fata na ɗan adam, ƙwayoyin cuta, man injin, man mai, photoresist, tsaftacewa mai ƙarfi, da sauransu.
Irin waɗannan gurɓatattun abubuwa yawanci suna samar da fim ɗin halitta a saman wafer don hana ruwa mai tsaftacewa ya isa saman wafer, yana haifar da ƙarancin tsaftacewa na farfajiyar wafer.
Sau da yawa ana aiwatar da cire irin waɗannan gurɓatattun abubuwa a matakin farko na aikin tsaftacewa, galibi ta amfani da hanyoyin sinadarai irin su sulfuric acid da hydrogen peroxide.
3. Karfe:
Abubuwan da ake amfani da su na ƙarfe na yau da kullun sun haɗa da baƙin ƙarfe, jan karfe, aluminum, chromium, simintin ƙarfe, titanium, sodium, potassium, lithium, da sauransu. Babban tushen su ne kayan aiki daban-daban, bututu, reagents na sinadarai, da gurɓataccen ƙarfe da ke haifarwa lokacin da aka haɗa haɗin ƙarfe yayin sarrafawa.
Irin wannan ƙazanta sau da yawa ana cire ta ta hanyoyin sinadarai ta hanyar samar da hadaddun ion ƙarfe.
4. Oxide:
Lokacin da semiconductorwafersan fallasa su zuwa yanayin da ke ɗauke da iskar oxygen da ruwa, wani Layer oxide na halitta zai fito a saman. Wannan fim ɗin oxide zai hana matakai da yawa a masana'antar semiconductor kuma ya ƙunshi wasu ƙazantattun ƙarfe. A ƙarƙashin wasu sharuɗɗa, za su haifar da lahani na lantarki.
Ana cika cire wannan fim ɗin oxide sau da yawa ta hanyar jiƙa a cikin ruwa mai tsarke hydrofluoric acid.
Tsarin tsaftacewa gabaɗaya
Abubuwan ƙazanta da aka haɗa a saman semiconductorwafersza a iya raba iri uku: kwayoyin, ionic da atomic.
Daga cikin su, ƙarfin adsorption tsakanin ƙazantattun kwayoyin halitta da saman wafer yana da rauni, kuma irin wannan nau'in najasa yana da sauƙin cirewa. Mafi yawa daga cikin ƙazantar mai mai tare da halayen hydrophobic, wanda zai iya samar da masking ga ƙazantattun ionic da atomic da ke gurɓata saman wafers na semiconductor, wanda ba shi da amfani ga kawar da waɗannan nau'ikan najasa guda biyu. Don haka, lokacin da ake tsaftace sinadarai na semiconductor, yakamata a fara cire ƙazantattun ƙwayoyin cuta.
Saboda haka, da general hanya na semiconductorwaferTsarin tsaftacewa shine:
De-molecularization-deionization-de-atomization-deionized ruwa kurkura.
Bugu da ƙari, don cire Layer oxide na halitta akan saman wafer, ana buƙatar ƙara matakin jiƙan amino acid. Sabili da haka, ra'ayin tsaftacewa shine fara cire gurɓataccen kwayoyin halitta a saman; sa'an nan kuma narkar da oxide Layer; a karshe cire barbashi da kuma karafa gurbatawa, da passivate saman a lokaci guda.
Hanyoyin tsaftacewa na kowa
Ana amfani da hanyoyin sinadarai sau da yawa don tsabtace wafers na semiconductor.
Chemical tsaftacewa yana nufin aiwatar da yin amfani da daban-daban sinadarai reagents da Organic kaushi don amsa ko narkar da kazanta da mai tabo a kan saman wafer to desorb ƙazanta, sa'an nan kuma kurkura da babban adadin high-tsarki zafi da sanyi deionized ruwa don samun. mai tsabta mai tsabta.
Ana iya raba tsabtace sinadarai zuwa rigar tsabtace sinadarai da busassun tsabtace sinadarai, daga cikinsu akwai rigar tsabtace sinadarai har yanzu.
Tsaftace sinadarai rigar
1. Tsabtace sinadarin jika:
Wet sinadaran tsaftacewa yafi hada da bayani nutsewa, inji scrubbing, ultrasonic tsaftacewa, megasonic tsaftacewa, Rotary spraying, da dai sauransu.
2. Magani nutsewa:
Dusar da Magani hanya ce ta kawar da gurɓacewar ƙasa ta hanyar nutsar da wafer a cikin maganin sinadarai. Ita ce hanyar da aka fi amfani da ita a cikin rigar tsabtace sinadarai. Ana iya amfani da mafita daban-daban don cire nau'ikan gurɓataccen abu a saman wafer.
Yawancin lokaci, wannan hanyar ba za ta iya cire ƙazanta gaba ɗaya a saman wafer ba, don haka ana amfani da matakan jiki kamar dumama, duban dan tayi, da motsawa yayin nutsewa.
3. Gyaran injina:
Ana amfani da goge-goge na injina sau da yawa don cire barbashi ko ragowar kwayoyin halitta a saman wafer. Gabaɗaya ana iya raba shi zuwa hanyoyi biyu:gogewar hannu da gogewa ta hanyar goge goge.
Shafawa da hannuita ce hanya mafi sauki ta gogewa. Ana amfani da goga mai bakin karfe don riƙe ƙwallon da aka jiƙa a cikin ethanol mai anhydrous ko wasu abubuwan kaushi na halitta sannan a shafa a hankali a saman wafer ɗin a hankali don cire fim ɗin kakin zuma, ƙura, manne manne ko wasu ƙwanƙwasa. Wannan hanya tana da sauƙi don haifar da karce da ƙazanta mai tsanani.
Mai shafa yana amfani da jujjuyawar injina don shafa saman wafer tare da goga mai laushi mai laushi ko goga mai gauraya. Wannan hanya tana rage raguwa sosai akan wafer. Matsakaicin matsi mai ƙarfi ba zai ɓata wafer ba saboda rashin jujjuyawar injin, kuma zai iya cire gurɓataccen abu a cikin tsagi.
4. Ultrasonic tsaftacewa:
Ultrasonic tsaftacewa ne mai tsaftacewa hanya yadu amfani a cikin semiconductor masana'antu. Amfaninsa shine tasirin tsaftacewa mai kyau, aiki mai sauƙi, kuma yana iya tsaftace hadaddun na'urori da kwantena.
Wannan hanyar tsaftacewa tana ƙarƙashin aikin raƙuman ruwa mai ƙarfi (mitar ultrasonic da aka saba amfani da ita ita ce 20s40kHz), kuma za a haifar da ƙananan sassa da yawa a cikin matsakaicin ruwa. Sashin da ba ya da yawa zai haifar da kumfa mai kumfa. Lokacin da kumfa ya ɓace, za a haifar da matsi mai ƙarfi a kusa da shi, yana karya haɗin sinadarai a cikin kwayoyin don narkar da ƙazanta a saman wafer. Ultrasonic tsaftacewa ne mafi tasiri ga cire insoluble ko insoluble juyi sharan gona.
5. Tsabtace Megasonic:
Megasonic tsaftacewa ba kawai yana da abũbuwan amfãni daga ultrasonic tsaftacewa, amma kuma shawo kan ta shortcomings.
Tsabtace Megasonic hanya ce ta tsabtace wafers ta hanyar haɗa tasirin mitar ƙarfi mai ƙarfi (850kHz) tare da halayen sinadarai na abubuwan tsabtace sinadarai. Lokacin tsaftacewa, ƙwayoyin maganin suna haɓaka ta hanyar megasonic kalaman (matsakaicin saurin gaggawa na iya kaiwa 30cmVs), kuma igiyar ruwa mai sauri tana ci gaba da yin tasiri a saman wafer, ta yadda gurɓataccen abu da ɓangarorin da ke haɗe zuwa saman. Ana cire wafer da karfi kuma a shigar da maganin tsaftacewa. Ƙara acidic surfactants zuwa maganin tsaftacewa, a gefe guda, zai iya cimma manufar cire kwayoyin halitta da kwayoyin halitta a kan polishing surface ta hanyar adsorption na surfactants; a gefe guda, ta hanyar haɗuwa da surfactants da yanayin acidic, zai iya cimma manufar kawar da gurɓataccen ƙarfe a saman takardar polishing. Wannan hanya za ta iya taka rawa a lokaci guda na shafan injina da tsabtace sinadarai.
A halin yanzu, hanyar tsaftacewa ta megasonic ta zama hanya mai tasiri don tsaftace zanen goge.
6. Hanyar fesa Rotary:
Hanyar fesa rotary wata hanya ce da ke amfani da hanyoyin injina don jujjuya wafer cikin sauri, kuma a ci gaba da fesa ruwa (ruwa mai tsafta mai tsafta ko wani ruwa mai tsafta) a saman wafer yayin aikin juyawa don cire ƙazanta akan surface na wafer.
Wannan hanyar tana amfani da gurɓataccen abu a saman wafer don narkewa a cikin ruwan da aka fesa (ko amsa ta hanyar sinadarai don narkewa), kuma yana amfani da tasirin centrifugal na juyawa mai sauri don sanya ruwan da ke ɗauke da ƙazanta ya rabu da saman wafer. cikin lokaci.
Hanyar fesa jujjuya tana da fa'idodin tsaftace sinadarai, tsabtace injiniyoyin ruwa, da gogewa mai ƙarfi. A lokaci guda kuma, ana iya haɗa wannan hanya tare da tsarin bushewa. Bayan wani lokaci na tsaftace ruwan da aka lalata, ana dakatar da feshin ruwan kuma ana amfani da iskar gas. A lokaci guda, ana iya ƙara saurin jujjuya don ƙara ƙarfin centrifugal don saurin bushewa saman wafer.
7.bushewar sinadarai mai bushewa
Tsabtace bushewa yana nufin fasahar tsaftacewa wanda baya amfani da mafita.
Fasahar tsaftace bushewa da ake amfani da ita a halin yanzu sun haɗa da: fasahar tsabtace plasma, fasahar tsabtace lokacin gas, fasahar tsabtace katako, da dai sauransu.
Amfanin tsaftace bushewa shine tsari mai sauƙi kuma babu gurbataccen yanayi, amma farashin yana da girma kuma ikon yin amfani da shi ba shi da girma don lokacin.
1. Fasahar tsaftace Plasma:
Ana amfani da tsaftacewar Plasma sau da yawa a cikin tsarin cirewar hoto. Ana shigar da ƙaramin iskar oxygen a cikin tsarin amsawar plasma. A ƙarƙashin aikin filin lantarki mai ƙarfi, iskar oxygen ta haifar da plasma, wanda da sauri ya oxidizes mai ɗaukar hoto zuwa yanayin iskar gas mai canzawa kuma ana fitar dashi.
Wannan fasahar tsaftacewa yana da fa'ida na aiki mai sauƙi, inganci mai girma, tsaftataccen wuri, babu ɓarna, kuma yana da kyau don tabbatar da ingancin samfurin a cikin tsarin lalata. Bugu da ƙari, ba ya amfani da acid, alkalis da sauran kaushi, kuma babu matsaloli kamar zubar da sharar gida da gurɓataccen muhalli. Saboda haka, yana ƙara daraja da mutane. Koyaya, ba zai iya cire carbon da sauran ƙazantattun ƙarfe ko ƙarfe oxide ba.
2. Fasahar tsabtace lokaci na iskar gas:
Tsaftace lokaci na iskar gas yana nufin hanyar tsaftacewa wanda ke amfani da lokacin iskar gas daidai da abin da ya dace a cikin tsarin ruwa don yin hulɗa tare da gurɓataccen abu a saman wafer don cimma manufar cire ƙazanta.
Misali, a cikin tsarin CMOS, tsaftacewar wafer yana amfani da hulɗar tsakanin lokacin gas HF da tururin ruwa don cire oxides. Yawancin lokaci, tsarin HF da ke ɗauke da ruwa dole ne ya kasance tare da tsarin kawar da barbashi, yayin da amfani da fasahar tsaftacewa na HF na gas ba ya buƙatar tsarin kawar da barbashi na gaba.
Mafi mahimmancin fa'idodin idan aka kwatanta da tsarin HF mai ruwa sun kasance mafi ƙarancin amfani da sinadarai na HF da ingantaccen tsaftacewa.
Maraba da kowane abokin ciniki daga ko'ina cikin duniya don ziyartar mu don ƙarin tattaunawa!
https://www.vet-china.com/
https://www.facebook.com/people/Ningbo-Miami-Advanced-Material-Technology-Co-Ltd/100085673110923/
https://www.linkedin.com/company/100890232/admin/page-posts/published/
https://www.youtube.com/@user-oo9nl2qp6j
Lokacin aikawa: Agusta-13-2024