Fasahar daukar hoto ta fi mayar da hankali kan amfani da tsarin gani don fallasa tsarin da'ira akan wafer silicon. Daidaiton wannan tsari kai tsaye yana rinjayar aiki da yawan amfanin da'irori da aka haɗa. A matsayin ɗaya daga cikin manyan kayan aiki don kera guntu, injin lithography yana ƙunshe da ɗaruruwan dubunnan abubuwa. Dukansu kayan aikin gani da abubuwan da ke cikin tsarin lithography suna buƙatar madaidaicin madaidaici don tabbatar da aikin kewayawa da daidaito.SiC ceramicsan yi amfani da suwafer chucksda yumbu square madubai.
Wafer chuckWafer chuck a cikin injin lithography yana ɗauka kuma yana motsa wafer yayin aikin fallasa. Daidaitaccen daidaitawa tsakanin wafer da chuck yana da mahimmanci don yin daidaitaccen tsari akan saman wafer.SiC waferchucks an san su don nauyin nauyi, babban kwanciyar hankali da ƙananan haɓakaccen haɓakaccen zafi, wanda zai iya rage nauyin inertial da inganta ingantaccen motsi, daidaita daidaito da kwanciyar hankali.
Madubin murabba'in yumbu A cikin injin lithography, aikin aiki tare tsakanin wafer chuck da matakin abin rufe fuska yana da mahimmanci, wanda kai tsaye yana shafar daidaiton lithography da yawan amfanin ƙasa. Maɓallin murabba'i shine maɓalli mai mahimmanci na tsarin ma'auni na wafer chuck, kuma buƙatun kayan sa suna da nauyi da tsauri. Kodayake yumburan siliki na carbide suna da ingantattun kaddarorin masu nauyi, kera irin waɗannan abubuwan suna da wahala. A halin yanzu, manyan masana'antun haɗaɗɗun kayan aikin kewayawa na duniya galibi suna amfani da kayan kamar fused silica da cordierite. Duk da haka, tare da ci gaban fasaha, kwararrun kasar Sin sun sami nasarar kera manyan sifofi masu sarkakiya, masu nauyi mai nauyi, cikakkun madubin murabba'in yumbu na silicon carbide da sauran kayan aikin gani na injin daukar hoto. Mashin hoto, wanda kuma aka sani da buɗewa, yana watsa haske ta hanyar abin rufe fuska don samar da tsari akan abubuwan da ke ɗaukar hoto. Duk da haka, lokacin da hasken EUV ya haskaka abin rufe fuska, yana fitar da zafi, yana ƙara yawan zafin jiki zuwa 600 zuwa 1000 digiri Celsius, wanda zai iya haifar da lalacewar zafi. Sabili da haka, yawanci ana ajiye fim ɗin SiC akan hoton hoto. Yawancin kamfanoni na kasashen waje, irin su ASML, yanzu suna ba da fina-finai tare da watsawa fiye da 90% don rage tsaftacewa da dubawa yayin amfani da hoton hoto da kuma inganta ingantaccen aiki da samfurin na'urorin hoto na EUV.
Plasma Etchingda Deposition Photomasks, wanda kuma aka sani da crosshairs, suna da babban aikin watsa haske ta hanyar abin rufe fuska da kuma samar da tsari akan kayan da ke ɗaukar hoto. Duk da haka, lokacin da hasken EUV (matsananciyar ultraviolet) ya haskaka hoton hoto, yana fitar da zafi, yana ƙara yawan zafin jiki tsakanin 600 zuwa 1000 digiri Celsius, wanda zai iya haifar da lalacewar thermal. Don haka, yawanci ana ajiye fim ɗin silicon carbide (SiC) a kan mashin hoto don rage wannan matsalar. A halin yanzu, yawancin kamfanonin kasashen waje, irin su ASML, sun fara samar da fina-finai tare da nuna gaskiya fiye da 90% don rage buƙatar tsaftacewa da dubawa yayin amfani da hoton hoto, ta yadda za a inganta inganci da samar da samfurori na EUV lithography inji. . Plasma Etching da kumaZoben Mayar da Hankalida sauransu A cikin masana'antar semiconductor, tsarin etching yana amfani da ruwa ko iskar gas (kamar iskar gas mai ɗauke da fluorine) ionized cikin plasma don bombard da wafer da zaɓin cire kayan da ba'a so har sai tsarin da ake so ya kasance akanwaferfarfajiya. Sabanin haka, jigon fim na bakin ciki ya yi kama da na baya na etching, ta yin amfani da hanyar ajiya don tara kayan insulating tsakanin yadudduka na ƙarfe don samar da fim na bakin ciki. Tunda dukkanin hanyoyin biyu suna amfani da fasahar plasma, suna da haɗari ga tasirin lalacewa akan ɗakunan da aka gyara. Don haka, ana buƙatar abubuwan da ke cikin kayan aikin don samun kyakkyawan juriya na plasma, ƙarancin amsawa ga iskar gas ɗin fluorine, da ƙarancin aiki. Abubuwan etching na gargajiya da kayan ajiya, kamar zoben mayar da hankali, yawanci ana yin su da kayan kamar silicon ko ma'adini. Koyaya, tare da ci gaban haɗaɗɗun ƙaramar da'ira, buƙatu da mahimmancin hanyoyin etching a cikin masana'antar da'ira da aka haɗa suna ƙaruwa. A matakin ƙarami, madaidaicin siliki wafer etching yana buƙatar plasma mai ƙarfi don cimma ƙananan faɗin layi da ƙarin hadaddun tsarin na'ura. Saboda haka, sinadari mai tururi (CVD) silicon carbide (SiC) sannu a hankali ya zama kayan shafa da aka fi so don etching da kayan ajiya tare da kyawawan kaddarorinsa na zahiri da sinadarai, babban tsabta da daidaituwa. A halin yanzu, abubuwan haɗin carbide na CVD a cikin kayan etching sun haɗa da zoben mayar da hankali, kawunan shawan gas, tire da zoben gefen. A cikin kayan aikin ajiya, akwai murfi na ɗaki, ɗakunan ɗaki daSIC mai rufin graphite substrates.
Saboda ƙarancin reactivity da haɓakawa zuwa gas ɗin chlorine da fluorine.CVD silicon carbideya zama ingantaccen abu don abubuwan da aka gyara kamar zoben mayar da hankali a cikin kayan etching na plasma.CVD silicon carbideAbubuwan da ke cikin kayan aikin etching sun haɗa da zoben mayar da hankali, shugabannin shawa gas, trays, zoben gefuna, da sauransu. Ɗauki zoben mayar da hankali a matsayin misali, su ne mahimman abubuwan da aka sanya a wajen wafer kuma cikin hulɗa kai tsaye tare da wafer. Ta hanyar yin amfani da wutar lantarki zuwa zobe, ana mayar da plasma ta hanyar zobe a kan wafer, inganta daidaituwa na tsari. A al'ada, zoben mayar da hankali ana yin su ne da silicon ko quartz. Koyaya, yayin da haɗe-haɗe da haɓaka ƙaramin ɗawainiya, buƙatu da mahimmancin hanyoyin etching a cikin masana'antar da'ira da aka haɗa yana ci gaba da ƙaruwa. Ƙarfin etching na Plasma da buƙatun makamashi suna ci gaba da hauhawa, musamman a cikin kayan aikin etching na plasma mai ƙarfi (CCP), wanda ke buƙatar ƙarin ƙarfin plasma. A sakamakon haka, yin amfani da zoben mayar da hankali da aka yi da kayan silicon carbide yana ƙaruwa.
Lokacin aikawa: Oktoba-29-2024