Abubuwan haɗin graphite masu tsabta suna da mahimmanci gatafiyar matakai a cikin semiconductor, LED da masana'antar hasken rana. Kyautar mu ta jeri daga abubuwan amfani da graphite don kristal girma wurare masu zafi (masu zafi, masu ɗorewa, rufi), zuwa madaidaicin kayan aikin graphite don kayan sarrafa wafer, kamar silicon carbide mai rufin graphite susceptors don Epitaxy ko MOCVD. Wannan shi ne inda mu na musamman graphite zo a cikin play: isostatic graphite ne muhimmi ga samar da fili semiconductor yadudduka.Waɗannan suna generated a cikin "zafi yankin" karkashin matsananci yanayin zafi a lokacin da ake kira epitaxy, ko MOCVD tsari. Mai jujjuyawar abin da aka lulluɓe wafers a cikin reactor, ya ƙunshi graphite mai rufi na silicon carbide. Sai kawai wannan mai tsafta, graphite mai kama da juna ya dace da manyan buƙatu a cikin tsarin sutura.
TBabban ka'idar LED epitaxial wafer girma shine: a kan ma'auni (yafi sapphire, SiC da Si) mai zafi zuwa zafin jiki mai dacewa, kayan Gaseous InGaAlP ana jigilar su zuwa farfajiyar ƙasa a cikin tsari mai sarrafawa don girma takamaiman fim ɗin crystal guda ɗaya. A halin yanzu, fasahar haɓakar wafer na LED epitaxial wafer galibi tana ɗaukar jigilar sinadarai na ƙarfe na ƙarfe.
LED epitaxial substrate abushine ginshiƙin ci gaban fasaha na masana'antar hasken wutar lantarki ta semiconductor. Daban-daban kayan substrate suna buƙatar fasaha na haɓaka epitaxial na LED daban-daban, fasahar sarrafa guntu da fasahar marufi na na'ura. Abubuwan da ke ƙasa suna ƙayyade hanyar haɓaka fasahar hasken wutar lantarki ta semiconductor.
Halaye na LED epitaxial wafer substrate zaɓi abu:
1. The epitaxial abu yana da guda ko irin crystal tsarin tare da substrate, kananan lattice akai mismatch, mai kyau crystallinity da low lahani yawa.
2. Kyakkyawan halayen haɗin gwiwar, masu dacewa da ƙaddamar da kayan epitaxial da mannewa mai ƙarfi
3. Yana da kyakkyawar kwanciyar hankali na sinadarai kuma ba shi da sauƙi don lalata da lalata a cikin yanayin zafi da yanayin girma na epitaxial.
4. Kyakkyawan aikin thermal, ciki har da kyawawan halayen thermal da rashin daidaituwa na thermal
5. Kyakkyawan aiki mai kyau, za'a iya sanya shi cikin tsari na sama da ƙananan 6, kyakkyawan aikin gani, kuma hasken da aka yi da na'urar da aka ƙirƙira ya ragu da substrate.
7. Kyakkyawan kayan aikin injiniya da sauƙin sarrafawa na na'urori, ciki har da thinning, polishing da yanke
8. Ƙananan farashi.
9. Girma mai girma. Gabaɗaya, diamita kada ya zama ƙasa da inci 2.
10. Yana da sauƙi don samun substrate na yau da kullun (sai dai idan akwai wasu buƙatu na musamman), kuma siffar substrate mai kama da rami na tire na kayan aikin epitaxial ba shi da sauƙi don samar da halin yanzu na yau da kullun na Eddy, don shafar ingancin epitaxial.
11. A kan yanayin rashin tasiri ga ingancin epitaxial, machinability na substrate zai dace da buƙatun guntu na gaba da sarrafa marufi kamar yadda zai yiwu.
Yana da matukar wahala ga zaɓin substrate don saduwa da abubuwan da ke sama goma sha ɗaya a lokaci guda. Sabili da haka, a halin yanzu, za mu iya daidaitawa da R & D kawai da kuma samar da na'urori masu samar da haske na semiconductor akan nau'i-nau'i daban-daban ta hanyar canjin fasaha na ci gaban epitaxial da kuma daidaita fasahar sarrafa na'ura. Akwai abubuwa da yawa da ake amfani da su don binciken gallium nitride, amma akwai nau'i biyu kawai waɗanda za a iya amfani da su don samarwa, wato sapphire Al2O3 da silicon carbide.SiC substrates.
Lokacin aikawa: Fabrairu-28-2022