Za'a iya shirya suturar SiC ta hanyar shigar da tururin sinadarai (CVD), canji na precursor, fesa plasma, da dai sauransu. Rufin da aka shirya ta hanyar CHEMICAL tururi ajiya yana da daidaituwa kuma yana da ƙarfi, kuma yana da ƙima mai kyau. Amfani da methyl trichlosilane. (CHzSiCl3, MTS) a matsayin tushen silicon, SiC shafi da aka shirya ta hanyar CVD shine ingantacciyar hanyar balagagge don aikace-aikacen wannan shafi.
SiC shafi da graphite da kyau sinadaran karfinsu, da bambanci na thermal fadada coefficient tsakanin su ne kananan, ta yin amfani da SiC shafi iya yadda ya kamata inganta lalacewa juriya da hadawan abu da iskar shaka juriya na graphite abu. Daga cikin su, stoichiometric rabo, dauki zazzabi, dilution gas, najasa gas da sauran yanayi suna da babban tasiri a kan dauki.
Lokacin aikawa: Satumba-14-2022