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Ƙaddamar da Poly da SiO2:
Bayan haka, abubuwan da suka wuce Poly da SiO2 an cire su, wato, cirewa. A wannan lokaci, da shugabancietchingana amfani da shi. A cikin rabe-rabe na etching, akwai rabe-rabe na etching ta hanyar da ba ta kai tsaye ba. Etching ta hanya tana nufinetchinga cikin wata hanya, yayin da etching ba ta hanyar kai tsaye ba (Na yi bazata ya ce da yawa. A takaice dai, shi ne cire SiO2 a wata hanya ta hanyar takamaiman acid da tushe). A cikin wannan misalin, muna amfani da etching ta ƙasa don cire SiO2, kuma ya zama haka.
A ƙarshe, cire mai ɗaukar hoto. A wannan lokacin, hanyar cire photoresisist ba shine kunnawa ta hanyar haske mai haske da aka ambata a sama ba, amma ta hanyar wasu hanyoyi, saboda ba mu buƙatar ƙayyade takamaiman girman a wannan lokacin, amma don cire duk photoresisist. A ƙarshe, ya zama kamar yadda aka nuna a cikin adadi mai zuwa.
Ta wannan hanyar, mun cimma manufar riƙe takamaiman wurin Poly SiO2.
Samar da tushe da magudanar ruwa:
A ƙarshe, bari mu yi la'akari da yadda ake samun tushe da magudanar ruwa. Har yanzu kowa ya tuna cewa mun yi magana game da shi a cikin fitowar ta ƙarshe. An dasa tushen da magudanar ion tare da nau'ikan abubuwa iri ɗaya. A wannan lokacin, za mu iya amfani da photoresist don buɗe tushen/magudanar ruwa inda ake buƙatar dasa nau'in N. Tun da kawai mun ɗauki NMOS a matsayin misali, duk sassan da ke cikin wannan adadi za a buɗe, kamar yadda aka nuna a cikin adadi mai zuwa.
Tun da ɓangaren da mai ɗaukar hoto ya rufe ba za a iya dasa shi ba (an toshe hasken), abubuwa masu nau'in N za a dasa su kawai akan NMOS da ake buƙata. Tun da substrate a ƙarƙashin poly yana katange ta poly da SiO2, ba za a dasa shi ba, don haka ya zama haka.
A wannan lokaci, an yi samfurin MOS mai sauƙi. A ka'idar, idan an ƙara ƙarfin lantarki zuwa tushen, magudanar ruwa, poly da substrate, wannan MOS na iya aiki, amma ba za mu iya ɗaukar bincike kawai ba kuma ƙara ƙarfin lantarki kai tsaye zuwa tushen da magudana. A wannan lokacin, ana buƙatar wiring MOS, wato, akan wannan MOS, haɗa wayoyi don haɗa MOS da yawa tare. Bari mu dubi tsarin wayoyi.
Yin VIA:
Mataki na farko shine rufe dukkan MOS tare da Layer na SiO2, kamar yadda aka nuna a cikin hoton da ke ƙasa:
Tabbas, wannan SiO2 an samar da shi ta CVD, saboda yana da sauri sosai kuma yana adana lokaci. Mai zuwa har yanzu shine aiwatar da sanya photoresist da fallasa. Bayan karshen, yana kama da wannan.
Sannan yi amfani da hanyar etching don fidda rami akan SiO2, kamar yadda aka nuna a ɓangaren launin toka a cikin hoton da ke ƙasa. Zurfin wannan rami yana tuntuɓar Si surface kai tsaye.
A ƙarshe, cire photoresisist kuma sami bayyanar mai zuwa.
A wannan lokacin, abin da ya kamata a yi shi ne cika madubin da ke cikin wannan rami. Amma menene wannan madugu? Kowane kamfani ya bambanta, mafi yawansu allunan tungsten ne, to ta yaya za a cika wannan rami? Ana amfani da hanyar PVD (Tsarin Tururi na Jiki), kuma ƙa'idar tana kama da hoton da ke ƙasa.
Yi amfani da electrons ko ions masu ƙarfi don jefa bama-bamai akan abin da aka yi niyya, kuma abin da aka fashe zai faɗo ƙasa a cikin nau'in zarra, ta haka za su samar da murfin ƙasa. Abubuwan da muke gani yawanci a cikin labarai suna nufin abubuwan da aka yi niyya anan.
Bayan cika ramin, yayi kama da haka.
Tabbas, lokacin da muka cika shi, ba shi yiwuwa a sarrafa kauri na rufin ya zama daidai da zurfin rami, don haka za a sami wasu wuce haddi, don haka muna amfani da fasahar CMP (Chemical Mechanical Polishing), wanda ke sauti sosai. high-karshen, amma shi ne a zahiri nika, nika tafi da wuce haddi sassa. Sakamakon kamar haka.
A wannan lokaci, mun kammala samar da Layer na via. Hakika, samar da via ne yafi ga wayoyi na karfe Layer a baya.
Ƙarfe samar da Layer:
A ƙarƙashin sharuɗɗan da ke sama, muna amfani da PVD don ƙaddamar da wani Layer na ƙarfe. Wannan karfe ne akasarin gawa na tushen tagulla.
Sa'an nan bayan fallasa da etching, mun sami abin da muke so. Sannan ci gaba da tarawa har sai mun biya bukatunmu.
Lokacin da muka zana shimfidar wuri, za mu gaya muku adadin ƙarfe nawa da kuma ta hanyar tsarin da ake amfani da shi za a iya tarawa a mafi yawan, wanda ke nufin yawancin yadudduka za a iya tarawa.
A ƙarshe, muna samun wannan tsari. Babban kushin shine fil ɗin wannan guntu, kuma bayan marufi, ya zama fil ɗin da za mu iya gani (ba shakka, na zana shi ba da gangan ba, babu wani mahimmanci mai amfani, misali).
Wannan shine babban tsari na yin guntu. A cikin wannan fitowar, mun koyi game da mafi mahimmancin fallasa, etching, ion implantation, makera shambura, CVD, PVD, CMP, da dai sauransu a cikin semiconductor foundry.
Lokacin aikawa: Agusta-23-2024