SiC mai rufaffiyar ginshiƙi ana amfani da su don tallafawa da ɗora ɗigon kristal guda ɗaya a cikin kayan aikin tururi na ƙarfe-kwayoyin halitta (MOCVD). Kwanciyar hankali na thermal, daidaiton yanayin zafi da sauran sigogin aikin SiC mai rufaffiyar graphite tushe suna taka muhimmiyar rawa a cikin ingancin ci gaban kayan epitaxial, don haka shine babban maɓalli na kayan aikin MOCVD.
A cikin aiwatar da masana'antar wafer, ana ƙara gina yadudduka na epitaxial akan wasu kayan wafer don sauƙaƙe kera na'urori. Na'urori masu fitar da haske na LED na yau da kullun suna buƙatar shirya sassan epitaxial na GaAs akan abubuwan siliki; SiC epitaxial Layer yana girma a kan madaidaicin SiC don gina na'urori irin su SBD, MOSFET, da dai sauransu, don babban ƙarfin lantarki, babban halin yanzu da sauran aikace-aikacen wutar lantarki; GaN epitaxial Layer an gina shi akan sic substrate mai rufewa don ƙara gina HEMT da sauran na'urori don aikace-aikacen RF kamar sadarwa. Wannan tsari ba ya rabuwa da kayan aikin CVD.
A cikin CVD kayan aiki, da substrate ba za a iya kai tsaye sanya a kan karfe ko kuma kawai sanya a kan tushe ga epitaxial jijiya, saboda ya shafi da iskar gas kwarara (a kwance, a tsaye), zafin jiki, matsa lamba, gyarawa, zubar da gurbatawa da sauran al'amurran da suka shafi. abubuwan tasiri. Saboda haka, wajibi ne a yi amfani da tushe, sa'an nan kuma sanya substrate a kan faifai, sa'an nan kuma amfani da fasahar CVD zuwa epitaxial deposition a kan substrate, wanda shi ne SiC mai rufi graphite tushe (wanda aka sani da tire).
SiC mai rufaffiyar ginshiƙi ana amfani da su don tallafawa da ɗora ɗigon kristal guda ɗaya a cikin kayan aikin tururi na ƙarfe-kwayoyin halitta (MOCVD). Kwanciyar hankali na thermal, daidaiton yanayin zafi da sauran sigogin aikin SiC mai rufaffiyar graphite tushe suna taka muhimmiyar rawa a cikin ingancin ci gaban kayan epitaxial, don haka shine babban maɓalli na kayan aikin MOCVD.
Metal-organic chemical vapor deposition (MOCVD) shine babbar fasaha don haɓaka haɓakar fina-finai na GaN a cikin LED shuɗi. Yana da fa'idodin aiki mai sauƙi, ƙimar haɓaka mai iya sarrafawa da babban tsabtar fina-finan GaN. A matsayin wani muhimmin sashi a cikin ɗakin amsawa na kayan aiki na MOCVD, ginin da aka yi amfani da shi don GaN fim ɗin ci gaban epitaxial yana buƙatar samun fa'idodin juriya na zafin jiki mai ƙarfi, rashin daidaituwa na thermal, kwanciyar hankali mai kyau na sinadarai, juriya mai ƙarfi na thermal, da sauransu. sharuddan da ke sama.
Kamar yadda daya daga cikin core aka gyara na MOCVD kayan aiki, graphite tushe ne m da kuma dumama jiki na substrate, wanda kai tsaye kayyade uniformity da tsarki na fim abu, don haka da ingancin kai tsaye rinjayar da shirye-shiryen na epitaxial takardar, kuma a daidai wannan. lokaci, tare da karuwar yawan amfani da kuma canza yanayin aiki, yana da sauƙin sawa, na kayan aiki.
Ko da yake graphite yana da kyau kwarai thermal watsin da kwanciyar hankali, yana da kyau fa'ida a matsayin tushe bangaren na MOCVD kayan aiki, amma a cikin samar da tsari, graphite zai lalata da foda saboda saura na lalata gas da karfe Organics, da kuma sabis rayuwa na graphite tushe za a rage ƙwarai. A lokaci guda, fadowar graphite foda zai haifar da gurɓataccen gurɓataccen guntu.
Bayyanar fasahar sutura na iya samar da gyaran gyare-gyaren foda, haɓaka haɓakaccen zafi, da daidaita rarraba zafi, wanda ya zama babban fasaha don magance wannan matsala. Tushen Graphite a cikin kayan aikin MOCVD yana amfani da yanayi, rufin tushe na graphite yakamata ya dace da halaye masu zuwa:
(1) Tushen graphite za a iya nannade shi sosai, kuma yawancin yana da kyau, in ba haka ba graphite tushe yana da sauƙin lalata a cikin iskar gas.
(2) Ƙarfin haɗin gwiwa tare da ginshiƙan graphite yana da girma don tabbatar da cewa rufin ba shi da sauƙi ya fadi bayan yawancin yawan zafin jiki da ƙananan zafin jiki.
(3) Yana da kyakkyawan kwanciyar hankali na sinadarai don guje wa gazawar shafi a cikin babban zafin jiki da yanayin lalata.
SiC yana da fa'idodi na juriya na lalata, haɓakar haɓakar thermal, juriya na zafin zafi da kwanciyar hankali mai ƙarfi, kuma yana iya aiki da kyau a cikin yanayin GaN epitaxial. Bugu da ƙari, ƙimar haɓakar haɓakar thermal na SiC ya bambanta kaɗan da na graphite, don haka SiC shine kayan da aka fi so don rufin saman ginshiƙi.
A halin yanzu, SiC na kowa shine nau'in 3C, 4H da 6H, kuma SiC na amfani da nau'ikan lu'ulu'u daban-daban sun bambanta. Misali, 4H-SiC na iya kera na'urori masu ƙarfi; 6H-SiC shine mafi kwanciyar hankali kuma yana iya kera na'urorin lantarki; Saboda tsarinsa mai kama da GaN, ana iya amfani da 3C-SiC don samar da GaN epitaxial Layer da kera na'urorin SiC-GaN RF. 3C-SiC kuma an fi sani da β-SiC, kuma muhimmin amfani da β-SiC shine fim da kayan shafa, don haka β-SiC a halin yanzu shine babban kayan shafa.
Lokacin aikawa: Agusta-04-2023