Matsayin bincike na SiC hadedde kewaye

Daban-daban daga na'urori masu hankali na S1C waɗanda ke bin babban ƙarfin lantarki, babban iko, babban mitar da halaye masu zafin jiki, makasudin bincike na SiC hadedde da'irar shine yafi samun babban zazzabi dijital kewaye don ikon sarrafa ikon ICs mai hankali. Kamar yadda SiC hadedde da'ira don filin lantarki na ciki yana da ƙasa sosai, don haka tasirin lalacewar microtubules zai ragu sosai, wannan shine farkon yanki na SiC haɗaɗɗen guntu mai haɓaka aiki da aka tabbatar, ainihin samfurin da aka gama kuma ƙaddara ta hanyar yawan amfanin ƙasa ya fi girma. fiye da lahani na microtubules, sabili da haka, dangane da samfurin samar da SiC da Si da CaAs abu ne a fili daban-daban. Guntu ya dogara ne akan ƙarancin fasahar NMOSFET. Babban dalili shi ne cewa ingantacciyar motsi mai ɗaukar hoto na tashar SiC MOSFETs baya da ƙasa sosai. Don inganta yanayin motsi na Sic, ya zama dole don haɓakawa da haɓaka tsarin iskar oxygen na thermal na Sic.

Jami'ar Purdue ta yi aiki da yawa akan hanyoyin haɗin gwiwar SiC. A cikin 1992, an sami nasarar haɓaka masana'antar akan tashar juyawa ta 6H-SIC NMOSFETs monolithic dijital hadedde da'ira. Guntu ya ƙunshi kuma ba kofa ba, ko ba kofa ba, akan ko kofa, ma'aunin binary, da da'irori na rabi kuma yana iya aiki da kyau a cikin kewayon zafin jiki na 25°C zuwa 300°C. A cikin 1995, jirgin farko na SiC MESFET Ics an ƙirƙira shi ne ta amfani da fasahar keɓewar allurar vanadium. Ta daidai sarrafa adadin vanadium da aka yi wa allurar, ana iya samun SiC mai rufewa.

A cikin da'irar dabaru na dijital, da'irorin CMOS sun fi kyan gani fiye da da'irar NMOS. A cikin watan Satumba na 1996, an kera na'urar haɗe-haɗe ta dijital ta 6H-SIC CMOS ta farko. Na'urar tana amfani da alluran N-order da Layer oxide Layer, amma saboda wasu matsalolin tsari, guntu PMOSFETs ƙarfin wutar lantarki ya yi girma sosai. A cikin Maris 1997 lokacin kera ƙarni na biyu na SiC CMOS. Fasaha na allurar P tarkon da thermal growth oxide Layer an karɓi. Matsakaicin ƙarfin wutar lantarki na PMOSEFTs da aka samu ta hanyar haɓaka tsari shine kusan -4.5V. Duk da'irar da ke kan guntu suna aiki da kyau a cikin dakin da zafin jiki har zuwa 300 ° C kuma ana amfani da su ta hanyar wutar lantarki guda ɗaya, wanda zai iya zama ko'ina daga 5 zuwa 15V.

Tare da haɓaka ingancin wafer na substrate, ƙarin ayyuka da mafi girman yawan amfanin ƙasa hadedde da'irori za a yi. Koyaya, lokacin da aka warware ainihin abubuwan SiC da matsalolin tsari, amincin na'urar da fakitin zai zama babban abin da ke shafar ayyukan haɗin gwiwar SiC masu zafin jiki.