2 Sakamakon gwaji da tattaunawa
2.1Epitaxial Layerkauri da daidaito
Kaurin Layer na Epitaxial, maida hankali na doping da daidaituwa ɗaya ne daga cikin mahimman alamomi don yin la'akari da ingancin wafers na epitaxial. Daidaitaccen kauri mai iya sarrafawa, maida hankali kan doping da daidaituwa a cikin wafer sune mabuɗin don tabbatar da aiki da daidaitoNa'urorin wutar lantarki na SiC, da kaurin Layer na epitaxial da daidaiton maida hankali na doping suma mahimman tushe ne don auna ƙarfin aiwatar da kayan aikin epitaxial.
Hoto na 3 yana nuna daidaiton kauri da kauri na 150 mm da 200 mmSiC epitaxial wafers. Ana iya gani daga adadi cewa kauri mai kauri na epitaxial Layer rabo ya yi daidai game da tsakiyar wurin wafer. Lokacin tsari na epitaxial shine 600s, matsakaicin matsakaicin kauri na kauri na 150mm epitaxial wafer shine 10.89 um, kuma daidaituwar kauri shine 1.05%. Ta hanyar ƙididdigewa, ƙimar girma na epitaxial shine 65.3 um/h, wanda shine matakin tsari na gaggawa na epitaxial. A karkashin wannan tsarin lokaci na epitaxial, kauri na epitaxial Layer na 200 mm epitaxial wafer shine 10.10 um, daidaitaccen kauri yana cikin 1.36%, kuma yawan ci gaban girma shine 60.60 um / h, wanda ya dan kadan fiye da girman 150 mm epitaxial girma. ƙimar. Wannan shi ne saboda akwai asara bayyananne a hanya lokacin da tushen siliki da tushen carbon ke gudana daga saman ɗakin amsawa ta saman wafer zuwa ƙasan ɗakin amsawa, kuma yankin wafer na 200 mm ya fi 150 mm girma. Gas ɗin yana gudana ta saman wafer na 200 mm don nisa mai tsayi, kuma iskar gas ɗin da ake cinyewa a hanya ya fi yawa. A ƙarƙashin yanayin da wafer ɗin ke ci gaba da juyawa, ƙaƙƙarfan kauri na epitaxial Layer ya fi ƙanƙara, don haka girman girma yana da hankali. Gabaɗaya, daidaituwar kauri na 150 mm da 200 mm epitaxial wafers yana da kyau, kuma ikon aiwatar da kayan aiki na iya biyan buƙatun na'urori masu inganci.
2.2 Epitaxial Layer maida hankali na doping da daidaituwa
Hoto na 4 yana nuna daidaiton maida hankali kan abubuwan kara kuzari da rarraba lankwasa na 150 mm da 200 mmSiC epitaxial wafers. Kamar yadda ake iya gani daga adadi, madaidaicin rarraba taro akan wafer na epitaxial yana da tabbataccen ma'auni dangane da tsakiyar wafer. Daidaitawar maida hankali kan doping na 150 mm da 200 mm epitaxial layers shine 2.80% da 2.66% bi da bi, wanda za'a iya sarrafa shi a cikin 3%, wanda shine kyakkyawan matakin ga kayan aikin ƙasa da ƙasa iri ɗaya. An rarraba ma'aunin maida hankali na doping na epitaxial Layer a cikin siffar "W" tare da diamita na diamita, wanda aka ƙaddara shi ne ta hanyar maɓuɓɓugar wutar lantarki na bango mai zafi a kwance, saboda hanyar iska ta hanyar wutar lantarki mai girma na iska daga kwance. ƙarshen shigarwar iska (a sama) kuma yana gudana daga ƙarshen ƙarshen a cikin hanyar laminar ta hanyar wafer; saboda yawan "raƙuwar hanya" na tushen carbon (C2H4) ya fi na tushen silicon (TCS), lokacin da wafer ya juya, ainihin C / Si akan farfajiyar wafer a hankali yana raguwa daga gefen zuwa gefe. cibiyar (tushen carbon a cikin cibiyar ya ragu), bisa ga "ka'idar matsayi na gasa" na C da N, ƙaddamarwar doping a tsakiyar wafer a hankali yana raguwa zuwa gefen, don samun kyakkyawan daidaituwa na daidaituwa, Ana ƙara gefen N2 a matsayin diyya a lokacin aikin epitaxial don rage raguwar tattarawar doping daga tsakiya zuwa gefe, ta yadda madaidaicin maida hankali na doping na ƙarshe ya gabatar da siffar "W".
2.3 Lalacewar Layer Epitaxial
Baya ga kauri da maida hankali na doping, matakin kula da lahani na Layer na epitaxial kuma shine ainihin ma'auni don auna ingancin wafers na epitaxial da kuma muhimmiyar alama na iya aiki na kayan aikin epitaxial. Ko da yake SBD da MOSFET suna da buƙatu daban-daban don lahani, mafi bayyananniyar lahani ta fuskar halittar jiki kamar nakasar digo, lahani na triangle, lahanin karas, lahanin tauraro mai wutsiya, da sauransu ana bayyana su azaman lahani na na'urorin SBD da MOSFET. Yiwuwar gazawar kwakwalwan kwamfuta masu ɗauke da waɗannan lahani yana da girma, don haka sarrafa adadin lahani na kisa yana da matuƙar mahimmanci don haɓaka yawan guntu da rage farashi. Hoto na 5 yana nuna rarraba lahani na kisa na 150 mm da 200 mm SiC epitaxial wafers. A karkashin yanayin cewa babu rashin daidaituwa a cikin rabo na C / Si, lalacewar karas da lahani na comet za a iya kawar da su, yayin da lalacewa da lahani na triangle suna da alaka da kula da tsabta a lokacin aiki na kayan aiki na epitaxial, matakin ƙazanta na graphite. sassa a cikin dakin amsawa, da ingancin substrate. Daga Table 2, ana iya ganin cewa ƙananan lahani na kisa na 150 mm da 200 mm epitaxial wafers za a iya sarrafawa a cikin 0.3 barbashi / cm2, wanda shine kyakkyawan matakin ga nau'in kayan aiki iri ɗaya. Matsakaicin ƙarancin ƙarancin iko na 150 mm wafer epitaxial ya fi na 200 mm wafer epitaxial. Wannan shi ne saboda tsarin shirye-shiryen substrate na 150 mm ya fi girma fiye da na 200 mm, ingancin substrate ya fi kyau, kuma matakin ƙazanta na 150 mm graphite dauki ɗakin ya fi kyau.
2.4 Epitaxial wafer roughness
Hoto 6 yana nuna hotunan AFM na saman 150 mm da 200 mm SiC epitaxial wafers. Ana iya gani daga adadi cewa tushen saman yana nufin raɗaɗin murabba'in murabba'in Ra na 150 mm da 200 mm epitaxial wafers shine 0.129 nm da 0.113 nm bi da bi, kuma saman Layer na epitaxial yana da santsi ba tare da bayyanannun yanayin haɗuwa na macro-mataki ba. Wannan al'amari ya nuna cewa ci gaban da epitaxial Layer ko da yaushe kula da mataki kwarara yanayin girma a lokacin dukan epitaxial tsari, kuma babu wani mataki aggregation faruwa. Ana iya ganin cewa ta hanyar yin amfani da ingantaccen tsarin ci gaban epitaxial, ana iya samun sassan epitaxial mai santsi akan 150 mm da 200 mm ƙananan kusurwa.
3 Kammalawa
An yi nasarar shirya 150 mm da 200 mm 4H-SiC nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'i-nau'i-nau'i-nau'i) an shirya su a kan sassan gida ta hanyar amfani da kayan haɓaka na 200mm SiC epitaxial girma kayan aiki, kuma an haɓaka tsarin tsarin epitaxial mai kama da 150 mm da 200 mm. Matsakaicin girma na epitaxial zai iya zama fiye da 60 μm/h. Yayin saduwa da buƙatun epitaxy mai sauri, ingancin wafer na epitaxial yana da kyau. Za'a iya sarrafa daidaiton kauri na 150 mm da 200 mm SiC epitaxial wafers a cikin 1.5%, daidaiton taro bai wuce 3% ba, ƙarancin lahani ya kasance ƙasa da 0.3 barbashi / cm2, kuma tushen tushen tushen epitaxial yana nufin murabba'in Ra. kasa da 0.15 nm. Mahimman alamun tsari na wafers na epitaxial suna a matakin ci gaba a cikin masana'antu.
Tushen: Kayan Aiki na Musamman na Masana'antar Lantarki
Marubuci: Xie Tianle, Li Ping, Yang Yu, Gong Xiaoliang, Ba Sai, Chen Guoqin, Wan Shengqiang
(48th Research Institute of China Electronics Technology Group Corporation, Changsha, Hunan 410111)
Lokacin aikawa: Satumba-04-2024