Batura lithium-ion suna haɓakawa a cikin alkiblar ƙarfin ƙarfin ƙarfi. A dakin da zafin jiki, silicon-tushen korau electrode kayan gami da lithium don samar da lithium-arzikin samfurin Li3.75Si lokaci, tare da takamaiman iya aiki har zuwa 3572 mAh / g, wanda ya fi girma fiye da ka'idar takamaiman damar graphite korau lantarki 372 mAh/g. Duk da haka, a lokacin maimaita caji da kuma fitar da aiwatar da silicon-tushen korau electrode kayan, da lokaci canji na Si da Li3.75Si iya samar da babbar girma fadada (game da 300%), wanda zai kai ga tsarin powdering na lantarki kayan da kuma ci gaba da samuwar na electrode. SEI fim, kuma a ƙarshe ya sa ƙarfin ya ragu da sauri. Masana'antu galibi suna haɓaka aikin kayan lantarki mara kyau na tushen silicon da kwanciyar hankali na batura na tushen silicon ta hanyar nano-sizing, murfin carbon, samuwar pore da sauran fasaha.
Kayayyakin Carbon suna da kyawawan halaye, ƙarancin farashi, da maɓuɓɓuka masu faɗi. Za su iya inganta haɓakawa da kwanciyar hankali na kayan tushen silicon. An fi son amfani da su azaman abubuwan haɓaka haɓaka aiki don na'urorin lantarki mara kyau na tushen silicon. Kayan siliki-carbon sune babban jagorar ci gaba na siliki mara kyau na lantarki. Rufin carbon zai iya inganta yanayin kwanciyar hankali na kayan tushen silicon, amma ikonsa na hana faɗaɗa ƙarar silicon gabaɗaya kuma ba zai iya magance matsalar faɗaɗa ƙarar silicon ba. Sabili da haka, don inganta kwanciyar hankali na kayan da aka yi amfani da su na silicon, ana buƙatar gina ƙananan sassa. Niƙan ƙwallo hanya ce ta masana'antu don shirya nanomaterials. Za'a iya ƙara abubuwa daban-daban ko abubuwan kayan aiki zuwa slurry da aka samu ta hanyar milling ɗin gwargwadon buƙatun ƙira na kayan haɗin gwiwa. An tarwatsa slurry a ko'ina ta hanyar slurries iri-iri da bushe-bushe. A lokacin aiwatar da bushewar nan take, nanoparticles da sauran abubuwan da ke cikin slurry za su samar da sifofi na tsari ba tare da bata lokaci ba. Wannan takarda tana amfani da masana'antu da niƙan ƙwallon ƙafa da ke da alaƙa da muhalli da fasahar bushewa don shirya kayan tushen silicon.
Hakanan za'a iya inganta aikin kayan tushen silicon ta hanyar daidaita yanayin halitta da halayen rarraba kayan silicon nanomaterials. A halin yanzu, silicon-tushen kayan da daban-daban morphologies da kuma rarraba halaye da aka shirya, kamar silicon nanorods, porous graphite saka nanosilicon, nanosilicon rarraba a carbon spheres, silicon / graphene tsararru porous Tsarin, da dai sauransu A daidai sikelin, idan aka kwatanta da nanoparticles. , Nanosheets na iya mafi kyau murkushe matsalar murkushe lalacewa ta hanyar haɓaka ƙarar, kuma kayan yana da haɓakar haɓaka. Rushewar tari na nanosheets kuma na iya samar da tsari mara kyau. Don shiga ƙungiyar musanya ta siliki korau electrode. Samar da wuri mai ɗaukar hoto don faɗaɗa ƙarar kayan silicon. Gabatarwar carbon nanotubes (CNTs) na iya ba kawai inganta conductivity na abu, amma kuma inganta samuwar porous Tsarin na kayan saboda da daya-girma morphological halaye. Babu wani rahoto kan sifofi da aka gina ta siliki nanosheets da CNTs. Wannan takarda rungumi dabi'ar masana'antu m ball milling, nika da watsawa, fesa bushewa, carbon pre-shafi da calcination hanyoyin, da kuma gabatar da porous talla a cikin shiri tsari shirya porous silicon tushen korau electrode kayan kafa ta kai taro na silicon nanosheets da kuma CNTs. Tsarin shirye-shiryen yana da sauƙi, abokantaka na muhalli, kuma ba a samar da ruwa mai sharar gida ko sharar gida ba. Akwai rahotannin wallafe-wallafe da yawa game da murfin carbon na kayan tushen silicon, amma akwai 'yan tattaunawa mai zurfi game da tasirin shafi. Wannan takarda tana amfani da kwalta azaman tushen carbon don bincika tasirin hanyoyin rufewar carbon guda biyu, rufin lokaci na ruwa da ƙwaƙƙwaran lokaci mai ƙarfi, akan tasirin shafi da aikin kayan lantarki mara kyau na tushen silicon.
1 Gwaji
1.1 Shirye-shiryen kayan aiki
A shirye-shiryen na porous silicon-carbon hada kayan, yafi hada da biyar matakai: ball milling, nika da watsawa, fesa bushewa, carbon pre-shafi da carbonization. Na farko, auna 500 g na foda na farko na silicon (na gida, 99.99% tsarki), ƙara 2000 g na isopropanol, kuma yi milling rigar ball a gudun milling na 2000 r/min na 24 h don samun nano-sikelin silicon slurry. The samu silicon slurry aka canjawa wuri zuwa watsawa canja wurin tanki, da kuma kayan da ake kara bisa ga taro rabo na silicon: graphite (samar a Shanghai, baturi grade): carbon nanotubes (samar a Tianjin, baturi sa): polyvinyl pyrrolidone (samar) a Tianjin, darajar nazari) = 40:60:1.5:2. Ana amfani da isopropanol don daidaita ƙaƙƙarfan abun ciki, kuma an tsara ingantaccen abun ciki don zama 15%. Ana yin niƙa da watsawa a saurin watsawa na 3500 r/min na 4 h. An kwatanta wani rukuni na slurries ba tare da ƙara CNTs ba, kuma sauran kayan iri ɗaya ne. Za a tura slurry ɗin da aka tarwatsa zuwa tanki mai bushewa, kuma ana yin bushewar feshi a cikin yanayin da ke da kariya ta nitrogen, tare da mashigai da yanayin yanayin 180 da 90 ° C, bi da bi. Sa'an nan kuma an kwatanta nau'ikan nau'ikan nau'ikan carbon guda biyu, ƙwaƙƙwaran lokaci mai ƙarfi da murfin lokaci na ruwa. A m lokaci shafi Hanyar ne: da fesa-bushe foda ne gauraye da 20% kwalta foda (wanda aka yi a Koriya, D50 ne 5 μm), gauraye a cikin wani inji mahautsini na 10 min, da kuma hadawa gudun ne 2000 r / min don samun. foda mai rufi. The ruwa lokaci shafi hanya ne: da fesa-bushe foda aka kara zuwa xylene bayani (sanya a Tianjin, analytical sa) dauke da 20% kwalta narkar da a cikin foda a wani m abun ciki na 55%, da kuma injin zuga a ko'ina. Gasa a cikin tanda mai zafi a 85 ℃ na 4h, saka a cikin mahaɗin inji don haɗuwa, saurin haɗuwa shine 2000 r / min, kuma lokacin haɗuwa shine 10 min don samun foda mai rufi. A ƙarshe, an ƙididdige foda mai rufaffiyar a cikin rotary kiln a ƙarƙashin yanayin nitrogen a ƙimar dumama na 5 ° C/min. Da farko an ajiye shi a zafin jiki na 550 ° C na 2h, sannan a ci gaba da yin zafi har zuwa 800 ° C kuma a ajiye shi a cikin zafin jiki na tsawon awanni 2, sannan a sanyaya shi ƙasa da 100 ° C kuma a fitar da shi don samun silicon-carbon. kayan hade.
1.2 Hanyoyin Halaye
An yi nazarin girman rabon kayan abu ta amfani da ma'aunin girman gwargwado (Sigar Mastersizer 2000, wanda aka yi a Burtaniya). An gwada foda da aka samu a kowane mataki ta hanyar bincikar microscopy na lantarki (Regulus8220, wanda aka yi a Japan) don nazarin ilimin halittar jiki da girman foda. An yi nazarin tsarin lokaci na kayan ta hanyar amfani da na'urar nazari ta X-ray foda (D8 ADVANCE, wanda aka yi a Jamus), kuma an yi nazarin abubuwan da ke cikin kayan ta amfani da na'urar nazarin makamashi. An yi amfani da kayan haɗin siliki-carbon da aka samu don yin maɓallin rabin-cell na samfurin CR2032, da kuma yawan adadin silicon-carbon: SP: CNT: CMC: SBR shine 92: 2: 2: 1.5: 2.5. The counter electrode ne karfe lithium sheet, da electrolyte ne a kasuwanci electrolyte (samfurin 1901, wanda aka yi a Koriya), Celgard 2320 diaphragm ana amfani da, cajin da fitarwa ƙarfin lantarki kewayon 0.005-1.5 V, cajin da fitarwa halin yanzu ne 0.1 C. (1C = 1A), kuma yanke fitar da halin yanzu shine 0.05 C.
Don ci gaba da bincika aikin siliki-carbon kayan haɗin gwiwar, an yi 408595 ƙarami mai laushi mai laushi. Ingantacciyar wutar lantarki tana amfani da NCM811 (wanda aka yi a cikin Hunan, darajar baturi), kuma graphite mara kyau an ɗora shi da 8% silicon-carbon abu. The tabbatacce electrode slurry dabara ne 96% NCM811, 1.2% polyvinylidene fluoride (PVDF), 2% conductive wakili SP, 0.8% CNT, kuma NMP ake amfani da matsayin dispersant; da korau electrode slurry dabara ne 96% hada korau electrode abu, 1.3% CMC, 1.5% SBR 1.2% CNT, da ruwa da ake amfani da matsayin dispersant. Bayan motsawa, shafi, mirgina, yankan, lamination, waldi na shafin, marufi, yin burodi, allurar ruwa, haɓakawa da rarraba iya aiki, 408595 laminated ƙananan batura mai laushi tare da ƙimar ƙimar 3 Ah an shirya. An gwada ƙimar aikin 0.2C, 0.5C, 1C, 2C da 3C da sake zagayowar cajin 0.5C da fitarwa na 1C. Matsakaicin caji da fitar da wutar lantarki ya kasance 2.8-4.2 V, cajin wutar lantarki akai-akai da akai-akai, kuma abin da aka yanke ya kasance 0.5C.
2 Sakamako da Tattaunawa
An lura da foda na farko na silicon ta hanyar duban microscope na lantarki (SEM). Foda siliki ya kasance ba bisa ka'ida ba tare da girman barbashi na kasa da 2μm, kamar yadda aka nuna a hoto 1(a). Bayan milling na ball, girman siliki foda ya ragu sosai zuwa kusan 100 nm [Hoto 1 (b)]. Gwajin girman barbashi ya nuna cewa D50 na foda na silicon bayan niƙa ball shine 110 nm kuma D90 shine 175 nm. Binciken da aka yi da hankali game da ilimin halittar siliki foda bayan milling ball yana nuna wani tsari mai banƙyama (samuwar tsarin fashewar za a ƙara tabbatar da shi daga sashin giciye SEM daga baya). Don haka, bayanan D90 da aka samu daga gwajin girman barbashi yakamata ya zama tsayin girman nanosheet. Haɗe tare da sakamakon SEM, ana iya yanke hukunci cewa girman nanosheet ɗin da aka samu ya fi ƙanƙanta fiye da mahimmancin ƙimar 150 nm na fashewar foda na silicon yayin caji da fitarwa a cikin akalla daya girma. Samuwar yanayin halittar ɗan adam ya samo asali ne saboda nau'ikan kuzarin rarrabuwar kawuna na jirage kristal na siliki, wanda daga cikinsu jirgin saman siliki yana da ƙarancin kuzari fiye da na kristal 100 da 110. Sabili da haka, wannan jirgin saman crystal yana da sauƙi sauƙi ta hanyar milling, kuma a ƙarshe ya samar da tsari mai banƙyama. Tsarin ƙwanƙwasa yana da amfani ga tarawa na sassauƙan sassa, yana ajiyar sararin samaniya don faɗaɗa ƙarar siliki, kuma yana inganta kwanciyar hankali na kayan.
An fesa slurry mai ɗauke da nano-silicon, CNT da graphite, kuma foda kafin da kuma bayan fesa an bincika ta SEM. Ana nuna sakamakon a cikin Hoto 2. Matrix na graphite da aka ƙara kafin fesa shi ne tsarin flake na al'ada tare da girman 5 zuwa 20 μm [Hoto 2 (a)]. The barbashi size gwajin graphite nuna cewa D50 ne 15μm. Foda da aka samu bayan fesa yana da nau'in halitta mai siffar zobe [Hoto na 2 (b)], kuma ana iya ganin cewa graphite yana lullube shi da Layer Layer bayan fesa. D50 na foda bayan fesa shine 26.2 μm. Siffofin sifofi na sassan na biyu an lura da su ta hanyar SEM, suna nuna halaye na tsari mara kyau wanda aka tara ta nanomaterials [Hoto 2 (c)]. The porous tsarin yana kunshe da silicon nanosheets da CNTs intertwined da juna [Hoto 2(d)], da kuma gwajin takamaiman surface area (BET) ne kamar yadda high as 53.3 m2/g. Saboda haka, bayan spraying, silicon nanosheets da CNTs kai-har su samar da wani porous tsarin.
An bi da labulen mai ƙyalli tare da murfin carbon na ruwa, kuma bayan ƙara murfin murfin carbon precursor farar da carbonization, an gudanar da lura da SEM. Ana nuna sakamakon a cikin Hoto 3. Bayan carbon pre-coating, saman na biyu barbashi zama santsi, tare da wani fili shafi Layer, da kuma shafi ne cikakken, kamar yadda aka nuna a Figures 3 (a) da (b). Bayan carbonization, da surface shafi Layer kula da kyau shafi jihar [Hoto 3 (c)]. Bugu da kari, hoton SEM na giciye yana nuna nau'ikan nanoparticles masu siffar tsiri [Hoto na 3(d)], wanda ya dace da sifofin morphological na nanosheets, yana kara tabbatar da samuwar nanosheets na silicon bayan milling ball. Bugu da kari, Hoto na 3 (d) ya nuna cewa akwai masu cikawa tsakanin wasu nanosheets. Wannan ya samo asali ne saboda amfani da hanyar rufe lokaci na ruwa. Maganin kwalta zai shiga cikin kayan, don haka saman nanosheets na silicon na ciki ya sami murfin kariya na carbon. Saboda haka, ta amfani da ruwa lokaci shafi, ban da samun na biyu barbashi shafi sakamako, da biyu carbon shafi sakamako na farko barbashi shafi kuma za a iya samu. An gwada foda mai carbonized ta BET, kuma sakamakon gwajin ya kasance 22.3 m2/g.
An yi amfani da foda na carbonized don nazarin nau'in nau'in makamashi na giciye (EDS), kuma an nuna sakamakon a cikin Hoto 4 (a). Matsakaicin girman micron shine bangaren C, wanda yayi daidai da matrix na graphite, kuma murfin waje ya ƙunshi silicon da oxygen. Don ƙarin bincika tsarin siliki, an yi gwajin diffraction X-ray (XRD), kuma an nuna sakamakon a cikin hoto 4 (b). Kayan ya ƙunshi graphite da siliki guda-crystal, ba tare da bayyananniyar halayen silicon oxide ba, wanda ke nuna cewa ɓangaren oxygen na gwajin bakan makamashi ya fito ne daga iskar iskar oxygen ta saman siliki. An yi rikodin kayan haɗin silicon-carbon azaman S1.
Abubuwan da aka shirya na silicon-carbon S1 an ƙaddamar da nau'in maɓalli-nau'in samar da rabin-cell da gwaje-gwajen caji. Ana nuna madaidaicin caji na farko a cikin Hoto 5. Ƙimar ƙayyadaddun ƙayyadaddun iya jujjuyawa shine 1000.8 mAh / g, kuma ingantaccen sake zagayowar ya kai 93.9%, wanda ya fi ƙarfin farko na mafi yawan kayan tushen silicon ba tare da riga-kafi ba. lithiation ya ruwaito a cikin littattafai. Babban inganci na farko yana nuna cewa kayan haɗin gwiwar silicon-carbon da aka shirya yana da kwanciyar hankali. Don tabbatar da tasirin tsarin porous, cibiyar sadarwa mai gudanarwa da murfin carbon akan kwanciyar hankali na kayan silicon-carbon, an shirya nau'ikan nau'ikan silicon-carbon abubuwa biyu ba tare da ƙara CNT ba kuma ba tare da murfin carbon na farko ba.
Halin ilimin halittar jiki na carbonized foda na silicon-carbon composite abu ba tare da ƙara CNT aka nuna a cikin Hoto 6. Bayan ruwa lokaci shafi da carbonization, wani shafi Layer za a iya gani a fili a kan surface na sakandare barbashi a Figure 6 (a). An nuna sashin giciye SEM na kayan carbonized a cikin Hoto 6 (b). Stacking na silicon nanosheets yana da halaye mara kyau, kuma gwajin BET shine 16.6 m2/g. Duk da haka, idan aka kwatanta da shari'ar tare da CNT [kamar yadda aka nuna a cikin Hoto 3 (d), gwajin BET na foda na carbonized shine 22.3 m2 / g], nano-silicon stacking density na ciki ya fi girma, yana nuna cewa ƙari na CNT zai iya ingantawa. samuwar tsari mara kyau. Bugu da ƙari, kayan ba su da hanyar sadarwa mai girma uku da CNT ta gina. An yi rikodin kayan haɗin silicon-carbon azaman S2.
Halayen ilimin halittar jiki na kayan haɗin gwiwar silicon-carbon da aka shirya ta hanyar daɗaɗɗen murfin carbon mai ƙarfi an nuna su a cikin Hoto 7. Bayan carbonization, akwai wani fili mai rufi a saman, kamar yadda aka nuna a cikin Hoto 7 (a). Hoto na 7 (b) yana nuna cewa akwai nau'ikan nanoparticles masu siffar tsiri a cikin sashin giciye, wanda yayi daidai da halayen halayen nanosheets. Tarin nanosheets yana samar da tsari mara kyau. Babu wani filaye na zahiri a saman nanosheets na ciki, yana nuni da cewa ƙaƙƙarfan shafi na carbon kawai yana samar da Layer shafi na carbon tare da tsari mai ƙyalli, kuma babu rufin rufin ciki don nanosheets na silicon. Ana yin rikodin wannan kayan haɗin siliki-carbon azaman S3.
An gudanar da cajin-nau'in maɓallin rabin-cell da gwajin fitarwa akan S2 da S3. Ƙimar ƙayyadaddun iya aiki da ingancin farko na S2 sun kasance 1120.2 mAh / g da 84.8%, bi da bi, kuma ƙayyadaddun iya aiki da ingancin farko na S3 sune 882.5 mAh / g da 82.9%, bi da bi. Ƙimar ƙayyadaddun iya aiki da inganci na farko na samfurin S3 mai ƙarfi mai ƙarfi shine mafi ƙasƙanci, yana nuna cewa kawai murfin carbon na tsarin porous ne kawai aka yi, kuma ba a yi amfani da murfin carbon na nanosheets na silicon na ciki ba, wanda ba zai iya ba da cikakken wasa ba. zuwa ƙayyadaddun ƙarfin kayan da aka yi da siliki kuma ba zai iya kare farfajiyar kayan da aka yi da silicon ba. Na farko yadda ya dace na samfurin S2 ba tare da CNT ba ya kasance ƙasa da na kayan haɗin siliki-carbon da ke dauke da CNT, yana nuna cewa a kan kyakkyawan launi mai kyau, cibiyar sadarwa mai gudanarwa da matsayi mafi girma na tsarin porous yana taimakawa wajen ingantawa. na caji da fitar da ingancin kayan silicon-carbon.
An yi amfani da kayan siliki-carbon S1 don yin ƙaramin fakiti mai laushi cikakken baturi don bincika aikin ƙimar da aikin sake zagayowar. Ana nuna madaidaicin adadin fitarwa a hoto na 8 (a). Ƙarfin fitarwa na 0.2C, 0.5C, 1C, 2C da 3C sune 2.970, 2.999, 2.920, 2.176 da 1.021 Ah, bi da bi. Matsakaicin fitarwa na 1C ya kai 98.3%, amma yawan fitarwar 2C ya ragu zuwa 73.3%, kuma yawan fitarwar 3C ya ragu zuwa 34.4%. Don shiga ƙungiyar musanya ta siliki mara kyau, da fatan za a ƙara WeChat: shimobang. Dangane da ƙimar caji, ƙarfin cajin 0.2C, 0.5C, 1C, 2C da 3C sune 3.186, 3.182, 3.081, 2.686 da 2.289 Ah, bi da bi. Adadin cajin 1C shine 96.7%, kuma adadin cajin 2C har yanzu ya kai 84.3%. Koyaya, lura da yanayin caji a cikin hoto na 8 (b), dandamalin cajin 2C ya fi girma fiye da dandamalin caji na 1C, kuma ƙarfin cajin wutar lantarki akai-akai yana ɗaukar mafi yawan (55%), yana nuna cewa polarization na baturi mai cajin 2C shine. riga mai girma sosai. Kayan siliki-carbon yana da kyakkyawan caji da aikin fitarwa a 1C, amma halayen tsarin kayan yana buƙatar ƙara haɓakawa don cimma babban aiki. Kamar yadda aka nuna a cikin Hoto 9, bayan 450 hawan keke, ƙarfin riƙewa shine 78%, yana nuna kyakkyawan aikin sake zagayowar.
Yanayin sararin samaniya na lantarki kafin da kuma bayan sake zagayowar an bincika ta hanyar SEM, kuma an nuna sakamakon a cikin Hoto 10. Kafin sake zagayowar, yanayin graphite da silicon-carbon kayan ya bayyana a fili [Hoto 10 (a)]; bayan sake zagayowar, a fili yana haifar da wani Layer Layer a saman [Hoto 10 (b)], wanda shine fim din SEI mai kauri. Raunin fim na SEIAyyukan amfani da lithium mai aiki yana da girma, wanda ba shi da amfani ga aikin sake zagayowar. Sabili da haka, haɓaka samar da fim ɗin SEI mai santsi (kamar ginin fim ɗin SEI na wucin gadi, ƙara abubuwan da suka dace da ƙari na electrolyte, da sauransu) na iya haɓaka aikin sake zagayowar. Sashe na SEM na giciye na siliki-carbon barbashi bayan zagayowar [Hoto 10(c)] ya nuna cewa asalin siliki nanoparticles na siliki mai siffar tsiri ya zama mai ƙarfi kuma an kawar da tsarin porous. Wannan ya samo asali ne saboda ci gaba da haɓaka ƙarar ƙara da kuma raguwa na kayan silicon-carbon yayin zagayowar. Don haka, ana buƙatar ƙara haɓakar sifa mai ƙyalli don samar da isasshen sarari don faɗaɗa ƙarar kayan tushen silicon.
3 Kammalawa
Dangane da haɓakar ƙarar, rashin ƙarfi mara ƙarfi da kwanciyar hankali mara kyau na kayan siliki mara kyau na kayan lantarki, wannan takarda tana haɓaka haɓakawa da niyya, daga ƙirar ƙirar siliki na nanosheets, ginin porous tsarin, ginin cibiyar sadarwa da cikakken murfin carbon na duka sassan biyu na biyu. , don inganta kwanciyar hankali na silicon-based korau electrode kayan a matsayin dukan. Tarin tarin nanosheets na silicon na iya samar da tsari mara kyau. Gabatarwar CNT zai ƙara haɓaka samuwar tsari mai ƙarfi. Abubuwan da aka haɗa da silicon-carbon da aka shirya ta hanyar rufin lokaci na ruwa yana da tasirin murfin carbon sau biyu fiye da wanda aka shirya ta ingantaccen shafi, kuma yana nuna takamaiman iya aiki da ingantaccen aiki na farko. Bugu da kari, da farko yadda ya dace na silicon-carbon composite abu dauke da CNT ya fi na cewa ba tare da CNT, wanda aka yafi saboda mafi girma mataki na porous tsarin ta ikon rage girma fadada na silicon tushen kayan. Gabatarwar CNT za ta gina hanyar sadarwa mai ma'ana guda uku, inganta haɓakar abubuwan da ke da alaƙa da silicon, da nuna kyakkyawan ƙimar ƙimar a 1C; kuma kayan yana nuna kyakkyawan aikin sake zagayowar. Koyaya, tsarin porous na kayan yana buƙatar ƙara ƙarfafawa don samar da isasshen sarari don faɗaɗa ƙarar silicon, da haɓaka samuwar santsi.da fim ɗin SEI mai yawa don ƙara haɓaka aikin sake zagayowar kayan haɗin gwiwar silicon-carbon.
Har ila yau, muna ba da samfuran graphite mai tsabta da silicon carbide, waɗanda ake amfani da su sosai wajen sarrafa wafer kamar oxidation, yaduwa, da annealing.
Maraba da kowane abokin ciniki daga ko'ina cikin duniya don ziyartar mu don ƙarin tattaunawa!
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Lokacin aikawa: Nuwamba-13-2024