SiC guda crystal abu ne na Rukuni IV-IV fili wanda ya ƙunshi abubuwa biyu, Si da C, a cikin rabon stoichiometric na 1:1. Taurinsa shine na biyu bayan lu'u-lu'u.
Ragewar carbon na hanyar siliki oxide don shirya SiC ya dogara ne akan dabarar amsa sinadarai masu zuwa:
Tsarin amsawa na raguwar carbon na silicon oxide yana da ɗan rikitarwa, wanda zafin amsawa kai tsaye yana shafar samfurin ƙarshe.
A cikin tsarin shirye-shiryen silicon carbide, an fara sanya albarkatun kasa a cikin tanderun juriya. Tanderun juriya ya ƙunshi bangon ƙarewa a ƙarshen duka, tare da na'urar lantarki mai graphite a tsakiya, kuma tushen tanderun yana haɗa na'urorin lantarki guda biyu. A gefen ginin tanderun, an fara sanya kayan albarkatun da ke shiga cikin amsawa, sannan an sanya kayan da ake amfani da su don adana zafi a kan gefen. Lokacin da aka fara narkewa, tanderun juriya yana ƙarfafawa kuma zafin jiki yana tashi zuwa digiri 2,600 zuwa 2,700 Celsius. Ana canza wutar lantarki ta wutar lantarki zuwa cajin ta saman ginin tanderun, yana haifar da zafi a hankali. Lokacin da zafin jiki na cajin ya wuce digiri 1450 ma'aunin celcius, wani sinadari yana faruwa don samar da siliki carbide da iskar carbon monoxide. Yayin da ake ci gaba da aikin narkewar, yankin zafin jiki mai zafi a cikin cajin zai kara karuwa a hankali, kuma adadin siliki na siliki da aka samar zai karu. Silicon carbide yana ci gaba da samuwa a cikin tanderun, kuma ta hanyar evaporation da motsi, lu'ulu'u suna girma a hankali kuma a ƙarshe suna haɗuwa cikin lu'ulu'u na cylindrical.
Wani ɓangare na bangon ciki na crystal ya fara rubewa saboda tsananin zafin da ya wuce digiri 2,600 na ma'aunin celcius. Abun siliki da aka samar ta hanyar lalacewa zai sake haɗuwa tare da sinadarin carbon a cikin caji don ƙirƙirar sabon siliki carbide.
Lokacin da sinadarin silicon carbide (SiC) ya cika kuma tanderun ya huce, mataki na gaba zai iya farawa. Da farko, an rushe ganuwar tanderun, sa'an nan kuma an zaɓi albarkatun da ke cikin tanderun da kuma sanya Layer Layer. Ana murƙushe albarkatun da aka zaɓa don samun kayan granular da muke so. Bayan haka, ana cire ƙazanta a cikin albarkatun ƙasa ta hanyar wanke ruwa ko tsaftacewa tare da maganin acid da alkali, da kuma rabuwar maganadisu da sauran hanyoyin. Abubuwan da aka tsaftace suna buƙatar bushewa sannan a sake dubawa, kuma a ƙarshe za'a iya samun foda na siliki mai tsabta. Idan ya cancanta, waɗannan foda za a iya ƙara sarrafa su gwargwadon yadda ake amfani da su, kamar yin siffa ko niƙa mai kyau, don samar da foda na silicon carbide mafi kyau.
Takamaiman matakai sune kamar haka:
(1) Kayan danye
Green silicon carbide micro foda ana samar da shi ta hanyar murƙushe koren siliki carbide mara nauyi. Abubuwan sinadaran silicon carbide ya kamata ya fi 99%, kuma carbon da baƙin ƙarfe oxide kyauta ya kamata ya zama ƙasa da 0.2%.
(2) Karye
Don murkushe yashi na siliki carbide ya zama foda mai kyau, a halin yanzu ana amfani da hanyoyi guda biyu a China, ɗayan shine murkushe rigar ƙwallon ƙwallon ɗan lokaci, ɗayan kuma yana murƙushe ta ta amfani da injin foda na iska.
(3)Rabuwar Magnetic
Ko da wace hanya ake amfani da ita don murkushe silicon carbide foda a cikin foda mai kyau, ana amfani da rigar magnetic rabuwa da rabuwar maganadisu na inji. Wannan shi ne saboda babu ƙura a lokacin rabuwar maganadisu mai jika, kayan maganadisu sun rabu gaba ɗaya, samfurin bayan rabuwar maganadisu yana ƙunshe da ƙarancin ƙarfe, kuma foda na silicon carbide da kayan maganadisu shima ya ragu.
(4)Rabuwar ruwa
Babban ka'ida na hanyar rabuwar ruwa shine yin amfani da saurin daidaitawa daban-daban na barbashi na siliki carbide na diamita daban-daban a cikin ruwa don aiwatar da daidaita girman barbashi.
(5) Binciken Ultrasonic
Tare da ci gaban fasahar ultrasonic, an kuma yi amfani da shi sosai a cikin nunin ultrasonic na fasahar foda, wanda zai iya magance matsalolin nunawa kamar adsorption mai ƙarfi, sauƙin agglomeration, wutar lantarki mai tsayi, high fineness, babban yawa, da haske takamaiman nauyi. .
(6) Duban inganci
Micropowder ingancin dubawa ya hada da sinadaran abun da ke ciki, barbashi size abun da ke ciki da sauran abubuwa. Don hanyoyin dubawa da ƙa'idodin inganci, da fatan za a koma zuwa "Sharuɗɗan Fasaha na Silicon Carbide."
(7) Nikawar ƙura
Bayan an haɗa ƙananan foda da kuma nunawa, ana iya amfani da kan kayan don shirya foda mai niƙa. Samar da foda mai niƙa zai iya rage sharar gida kuma ya shimfiɗa sarkar samfurin.
Lokacin aikawa: Mayu-13-2024