A halin yanzu,silicon carbide (SiC)kayan yumbu ne na therally conductive wanda ake nazari sosai a gida da waje. Ma'anar theormal conductivity na SiC yana da girma sosai, kuma wasu nau'ikan kristal na iya kaiwa 270W/mK, wanda ya riga ya zama jagora a cikin kayan da ba su da ƙarfi. Misali, aikace-aikacen SiC thermal conductivity za a iya gani a cikin substrate kayan na semiconductor na'urorin, high thermal conductivity yumbu kayan, heaters da dumama faranti domin semiconductor aiki, capsule kayan for nukiliya man fetur, da gas sealing zobba ga kwampreso farashinsa.
Aikace-aikace nasiliki carbidea cikin filin semiconductor
Nika fayafai da kayan aiki sune mahimman kayan aiki don samar da wafer silicon a cikin masana'antar semiconductor. Idan diskin niƙa an yi shi da ƙarfe na simintin ƙarfe ko ƙarfe na carbon, rayuwar sabis ɗinsa gajeru ce kuma ƙimar haɓakar zafinta mai girma. A lokacin sarrafa wafer siliki, musamman a lokacin niƙa mai sauri ko gogewa, saboda lalacewa da nakasar zafi na faifan niƙa, daɗaɗɗa da daidaiton wafer silicon yana da wahala a tabbatar. Faifan niƙa da aka yi da shisilicon carbide ceramicsyana da ƙarancin lalacewa saboda ƙaƙƙarfan taurinsa, kuma ƙimar faɗaɗawar zafinsa daidai yake da na wafer siliki, don haka ana iya ƙasa kuma ana goge shi cikin babban sauri.
Bugu da ƙari, lokacin da aka samar da wafern silicon, suna buƙatar yin maganin zafi mai zafi kuma ana ɗaukar su ta amfani da kayan aikin siliki na siliki. Suna da juriya da zafi kuma ba su da lahani. Za a iya amfani da carbon-kamar lu'u-lu'u (DLC) da sauran sutura a saman don haɓaka aiki, rage lalacewar wafer, da hana kamuwa da cuta daga yaduwa.
Bugu da ƙari, a matsayin wakilin na uku-ƙarni mai fadi-bandgap semiconductor kayan, silicon carbide guda crystal kayan da kaddarorin kamar babban bandgap nisa (kusan sau 3 na Si), high thermal conductivity (kusan 3.3 sau na Si ko 10 sau). na GaAs), babban adadin ƙaura na saturation na lantarki (kimanin sau 2.5 na Si) da babban fashewar wutar lantarki (kimanin sau 10 na Si ko sau 5 na GaAs). Na'urorin SiC sun haɗa da lahani na na'urorin kayan aikin semiconductor na gargajiya a cikin aikace-aikace masu amfani kuma sannu a hankali suna zama babban tushen wutar lantarki.
Bukatar babban kayan aikin zafi na silicon carbide yumbura ya karu sosai
Tare da ci gaba da ci gaban kimiyya da fasaha, buƙatun aikace-aikacen yumbu na silicon carbide a cikin filin semiconductor ya karu sosai, kuma babban ƙarfin zafin jiki shine mabuɗin alama don aikace-aikacen sa a cikin kayan aikin masana'anta na semiconductor. Sabili da haka, yana da mahimmanci don ƙarfafa bincike game da yumbu na silicon carbide high thermal conductivity. Rage abun ciki na oxygen na lattice, inganta haɓaka, da kuma daidaita tsarin rarraba kashi na biyu a cikin lattice shine manyan hanyoyin da za a inganta yanayin zafi na silicon carbide yumbura.
A halin yanzu, akwai ƴan karatu a kan high thermal conductivity silicon carbide yumbu a cikin ƙasata, kuma har yanzu akwai babban gibi idan aka kwatanta da matakin duniya. Umarnin bincike na gaba sun haɗa da:
● Ƙarfafa tsarin bincike na bincike na silicon carbide yumbu foda. Shirye-shiryen babban-tsarki, ƙananan oxygen silica carbide foda shine tushen don shirye-shiryen babban zafin jiki na silicon carbide yumbu;
● Ƙarfafa zaɓin kayan aikin sintering da bincike mai alaƙa;
● Ƙarfafa bincike da haɓaka kayan aiki masu mahimmanci. Ta hanyar daidaita tsarin sintirin don samun madaidaicin microstructure, yana da mahimmancin yanayi don samun yumbu na silicon carbide high thermal conductivity.
Matakan inganta yanayin zafi na siliki carbide yumbura
Makullin inganta haɓakar zafin jiki na yumbura na SiC shine don rage mitar watsawar phonon kuma ƙara phonon yana nufin hanya kyauta. Za a inganta haɓakar zafin jiki na SiC yadda ya kamata ta hanyar rage girman porosity da girman iyakar hatsi na yumbu na SiC, inganta tsabtar iyakokin hatsin SiC, rage ƙazantattun ƙazantar SiC ko lahani, da haɓaka mai jigilar zafi a cikin SiC. A halin yanzu, inganta nau'in da abun ciki na kayan taimako na sintering da zafin jiki mai zafi shine babban matakan inganta yanayin zafi na SiC yumbura.
① Haɓaka nau'in da abun ciki na kayan aikin sintering
Ana ƙara kayan taimako iri-iri sau da yawa lokacin shirya babban zafin zafin jiki na SiC yumbura. Daga cikin su, nau'in da abun ciki na kayan taimako na sintering suna da tasiri mai yawa akan yanayin zafi na SiC yumbura. Misali, abubuwan Al ko O a cikin tsarin Al2O3 tsarin sintering aids suna cikin sauƙi narkar da su cikin lattice na SiC, wanda ke haifar da guraben aiki da lahani, wanda ke haifar da haɓaka mitar watsawar phonon. Bugu da ƙari, idan abun ciki na kayan aikin sintiri ya yi ƙasa, kayan yana da wuya a yi la'akari da ƙima, yayin da babban abun ciki na kayan aiki mai mahimmanci zai haifar da karuwa a cikin ƙazanta da lahani. Matsakaicin kayan agajin lokaci mai yawa na iya hana haɓakar hatsin SiC da rage madaidaicin hanyar phonons. Saboda haka, don shirya high thermal conductivity SiC yumbura, shi wajibi ne don rage abun ciki na sintering aid kamar yadda zai yiwu yayin da saduwa da bukatun na sintering yawa, da kuma kokarin zabar sintering kayan aiki da wuya a narke a cikin SiC lattice.
* Kaddarorin thermal na yumbu na SiC lokacin da aka ƙara kayan aikin sintering daban-daban
A halin yanzu, yumburan SiC masu zafi da aka haɗa tare da BeO azaman taimakon sintering suna da matsakaicin matsakaicin yanayin zafi na ɗaki (270W · m-1 · K-1). Duk da haka, BeO abu ne mai guba mai guba da ƙwayar cuta, kuma bai dace da aikace-aikacen tartsatsi a cikin dakunan gwaje-gwaje ko filayen masana'antu ba. Mafi ƙasƙanci mafi ƙasƙanci na tsarin Y2O3-Al2O3 shine 1760 ℃, wanda shine kayan taimako na yau da kullun na ruwa-lokaci don yumbu na SiC. Duk da haka, tun da Al3 + yana sauƙi narkar da shi a cikin SiC lattice, lokacin da aka yi amfani da wannan tsarin a matsayin taimakon sintering, dakin zafin jiki na zafin jiki na SiC ceramics bai wuce 200W · m-1 · K-1 ba.
Abubuwan da ba kasafai ba kamar su Y, Sm, Sc, Gd da La ba su da sauƙi a narkewa a cikin SiC lattice kuma suna da alaƙar iskar oxygen, wanda zai iya rage iskar oxygen ta lattice ta SiC yadda ya kamata. Sabili da haka, Y2O3-RE2O3 (RE = Sm, Sc, Gd, La) tsarin shine taimakon sintering na yau da kullun don shirya babban haɓakar thermal (> 200W · m-1 · K-1) SiC ceramics. Ɗaukar taimakon taimakon tsarin Y2O3-Sc2O3 a matsayin misali, ƙimar karkatar da ion na Y3+ da Si4+ babba ne, kuma waɗannan biyun ba sa samun ingantaccen bayani. Solubility na Sc a cikin tsarkakakken SiC a 1800 ~ 2600 ℃ ƙananan ne, game da (2 ~ 3) × 1017atoms · cm-3.
② Maganin zafi mai zafi
Babban zafin jiki na zafin jiki na SiC yumbura yana da amfani don kawar da lahani na lattice, raguwa da damuwa na saura, inganta tsarin tsarin wasu kayan amorphous zuwa lu'ulu'u, da raunana tasirin phonon. Bugu da ƙari, maganin zafi mai zafi zai iya inganta haɓakar hatsin SiC yadda ya kamata, kuma a ƙarshe ya inganta halayen thermal na kayan. Misali, bayan maganin zafi mai zafi a 1950 ° C, ƙimar watsawar thermal diffusion coefficient na SiC ceramics ya karu daga 83.03mm2 · s-1 zuwa 89.50mm2 · s-1, kuma yawan zafin jiki na ɗaki ya karu daga 180.94W · m -1·K-1 zuwa 192.17W·m-1·K-1. Matsakaicin zafin jiki mai zafi yana inganta haɓaka iyawar deoxidation na taimakon sintering a saman SiC da lattice, kuma yana sa haɗin kai tsakanin hatsin SiC ya fi ƙarfi. Bayan babban zafin jiki na zafin jiki, yanayin zafi na ɗaki na yumbura na SiC ya inganta sosai.
Lokacin aikawa: Oktoba-24-2024